GB1339384A - Method for the manufacturing of a semiconductor device - Google Patents

Method for the manufacturing of a semiconductor device

Info

Publication number
GB1339384A
GB1339384A GB3623272A GB3623272A GB1339384A GB 1339384 A GB1339384 A GB 1339384A GB 3623272 A GB3623272 A GB 3623272A GB 3623272 A GB3623272 A GB 3623272A GB 1339384 A GB1339384 A GB 1339384A
Authority
GB
United Kingdom
Prior art keywords
electrode
layer
silicon
aug
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3623272A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
ITT Inc
Original Assignee
Deutsche ITT Industries GmbH
ITT Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Deutsche ITT Industries GmbH, ITT Industries Inc filed Critical Deutsche ITT Industries GmbH
Publication of GB1339384A publication Critical patent/GB1339384A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Element Separation (AREA)
GB3623272A 1971-08-07 1972-08-03 Method for the manufacturing of a semiconductor device Expired GB1339384A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2139631A DE2139631C3 (de) 1971-08-07 1971-08-07 Verfahren zum Herstellen eines Halbleiterbauelements, bei dem der Rand einer Diffusionszone auf den Rand einer polykristallinen Siliciumelektrode ausgerichtet ist

Publications (1)

Publication Number Publication Date
GB1339384A true GB1339384A (en) 1973-12-05

Family

ID=5816091

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3623272A Expired GB1339384A (en) 1971-08-07 1972-08-03 Method for the manufacturing of a semiconductor device

Country Status (7)

Country Link
JP (1) JPS4829370A (enExample)
AU (1) AU4513372A (enExample)
DE (1) DE2139631C3 (enExample)
FR (1) FR2148439B1 (enExample)
GB (1) GB1339384A (enExample)
IT (1) IT963314B (enExample)
ZA (1) ZA724729B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5131255B1 (enExample) * 1971-02-27 1976-09-06
GB1540450A (en) * 1975-10-29 1979-02-14 Intel Corp Self-aligning double polycrystalline silicon etching process
JPS56130497A (en) * 1980-03-19 1981-10-13 Toyota Motor Corp Formation of pattern or the like utilizing electro-deposition coating
US4318759A (en) * 1980-07-21 1982-03-09 Data General Corporation Retro-etch process for integrated circuits
JPS6137998A (ja) * 1984-07-27 1986-02-22 Seiko Instr & Electronics Ltd 時計文字板の製造方法

Also Published As

Publication number Publication date
ZA724729B (en) 1973-04-25
FR2148439A1 (enExample) 1973-03-23
DE2139631B2 (de) 1978-08-31
JPS4829370A (enExample) 1973-04-18
AU4513372A (en) 1974-02-07
FR2148439B1 (enExample) 1976-03-12
DE2139631A1 (de) 1973-03-01
DE2139631C3 (de) 1979-05-10
IT963314B (it) 1974-01-10

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee