GB1338042A - Method for the production of a field effect transistor - Google Patents
Method for the production of a field effect transistorInfo
- Publication number
- GB1338042A GB1338042A GB1324271*[A GB1324271A GB1338042A GB 1338042 A GB1338042 A GB 1338042A GB 1324271 A GB1324271 A GB 1324271A GB 1338042 A GB1338042 A GB 1338042A
- Authority
- GB
- United Kingdom
- Prior art keywords
- insulating layer
- coating
- metal coating
- source
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 2
- 230000005669 field effect Effects 0.000 title 1
- 238000000576 coating method Methods 0.000 abstract 10
- 239000011248 coating agent Substances 0.000 abstract 8
- 229910052751 metal Inorganic materials 0.000 abstract 6
- 239000002184 metal Substances 0.000 abstract 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 3
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000011651 chromium Substances 0.000 abstract 1
- 229910052804 chromium Inorganic materials 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000002161 passivation Methods 0.000 abstract 1
- 229910052697 platinum Inorganic materials 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
Landscapes
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19702021923 DE2021923B2 (de) | 1970-05-05 | 1970-05-05 | Verfahren zum herstellen eines feldeffekttransistors mit isolierter gateelektrode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1338042A true GB1338042A (en) | 1973-11-21 |
Family
ID=5770281
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1324271*[A Expired GB1338042A (en) | 1970-05-05 | 1971-05-05 | Method for the production of a field effect transistor |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3818582A (cg-RX-API-DMAC10.html) |
| DE (1) | DE2021923B2 (cg-RX-API-DMAC10.html) |
| FR (1) | FR2088334B3 (cg-RX-API-DMAC10.html) |
| GB (1) | GB1338042A (cg-RX-API-DMAC10.html) |
| NL (1) | NL7106079A (cg-RX-API-DMAC10.html) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5321989B2 (cg-RX-API-DMAC10.html) * | 1973-10-12 | 1978-07-06 | ||
| US5332697A (en) * | 1989-05-31 | 1994-07-26 | Smith Rosemary L | Formation of silicon nitride by nitridation of porous silicon |
| US20070013070A1 (en) * | 2005-06-23 | 2007-01-18 | Liang Mong S | Semiconductor devices and methods of manufacture thereof |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3475234A (en) * | 1967-03-27 | 1969-10-28 | Bell Telephone Labor Inc | Method for making mis structures |
| GB1209914A (en) * | 1967-03-29 | 1970-10-21 | Marconi Co Ltd | Improvements in or relating to semi-conductor devices |
| US3528168A (en) * | 1967-09-26 | 1970-09-15 | Texas Instruments Inc | Method of making a semiconductor device |
| US3566518A (en) * | 1967-10-13 | 1971-03-02 | Gen Electric | Method for fabricating field-effect transistor devices and integrated circuit modules containing the same by selective diffusion of activator impurities through preselected portions of passivating-insulating films |
| US3514844A (en) * | 1967-12-26 | 1970-06-02 | Hughes Aircraft Co | Method of making field-effect device with insulated gate |
| US3625647A (en) * | 1968-03-25 | 1971-12-07 | Dow Chemical Co | Method of preparing calcium-nickel phosphate catalyst |
| US3574010A (en) * | 1968-12-30 | 1971-04-06 | Texas Instruments Inc | Fabrication of metal insulator semiconductor field effect transistors |
-
1970
- 1970-05-05 DE DE19702021923 patent/DE2021923B2/de active Granted
- 1970-12-30 FR FR707047393A patent/FR2088334B3/fr not_active Expired
-
1971
- 1971-03-04 US US00120917A patent/US3818582A/en not_active Expired - Lifetime
- 1971-05-04 NL NL7106079A patent/NL7106079A/xx unknown
- 1971-05-05 GB GB1324271*[A patent/GB1338042A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2088334A7 (cg-RX-API-DMAC10.html) | 1972-01-07 |
| US3818582A (en) | 1974-06-25 |
| FR2088334B3 (cg-RX-API-DMAC10.html) | 1973-08-10 |
| NL7106079A (cg-RX-API-DMAC10.html) | 1971-11-09 |
| DE2021923B2 (de) | 1976-07-22 |
| DE2021923A1 (de) | 1971-11-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |