GB1332255A - Surface-controlled field effect semiconductor device - Google Patents

Surface-controlled field effect semiconductor device

Info

Publication number
GB1332255A
GB1332255A GB3726471A GB3726471A GB1332255A GB 1332255 A GB1332255 A GB 1332255A GB 3726471 A GB3726471 A GB 3726471A GB 3726471 A GB3726471 A GB 3726471A GB 1332255 A GB1332255 A GB 1332255A
Authority
GB
United Kingdom
Prior art keywords
gate
channel
region
diode
contact point
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3726471A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1332255A publication Critical patent/GB1332255A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Semiconductor Memories (AREA)
GB3726471A 1970-09-12 1971-08-09 Surface-controlled field effect semiconductor device Expired GB1332255A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702045177 DE2045177A1 (de) 1970-09-12 1970-09-12 Oberflächengesteuerte Halbleiteranordnung

Publications (1)

Publication Number Publication Date
GB1332255A true GB1332255A (en) 1973-10-03

Family

ID=5782266

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3726471A Expired GB1332255A (en) 1970-09-12 1971-08-09 Surface-controlled field effect semiconductor device

Country Status (4)

Country Link
JP (1) JPS5144868B1 (it)
DE (1) DE2045177A1 (it)
GB (1) GB1332255A (it)
IT (1) IT998037B (it)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4611220A (en) * 1983-11-16 1986-09-09 General Motors Corporation Junction-MOS power field effect transistor
US4786952A (en) * 1986-07-24 1988-11-22 General Motors Corporation High voltage depletion mode MOS power field effect transistor
US4769685A (en) * 1986-10-27 1988-09-06 General Motors Corporation Recessed-gate junction-MOS field effect transistor

Also Published As

Publication number Publication date
JPS5144868B1 (it) 1976-12-01
IT998037B (it) 1976-01-20
DE2045177A1 (de) 1972-03-16

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee