GB1327836A - Process for forming a ternary material on a substrate - Google Patents
Process for forming a ternary material on a substrateInfo
- Publication number
- GB1327836A GB1327836A GB2046771A GB2046771A GB1327836A GB 1327836 A GB1327836 A GB 1327836A GB 2046771 A GB2046771 A GB 2046771A GB 2046771 A GB2046771 A GB 2046771A GB 1327836 A GB1327836 A GB 1327836A
- Authority
- GB
- United Kingdom
- Prior art keywords
- zone
- temperature
- reactants
- substrate
- ternary material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000463 material Substances 0.000 title abstract 7
- 239000000758 substrate Substances 0.000 title abstract 4
- 238000000034 method Methods 0.000 title abstract 2
- 239000000376 reactant Substances 0.000 abstract 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 2
- 239000008246 gaseous mixture Substances 0.000 abstract 2
- 230000000737 periodic effect Effects 0.000 abstract 2
- 229910005540 GaP Inorganic materials 0.000 abstract 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 abstract 1
- 150000004820 halides Chemical class 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4488—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by in situ generation of reactive gas by chemical or electrochemical reaction
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electrochemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP877870A JPS4937359B1 (enrdf_load_stackoverflow) | 1970-01-30 | 1970-01-30 | |
JP12472170 | 1970-12-29 | ||
JP12469970A JPS5014640B1 (enrdf_load_stackoverflow) | 1970-12-29 | 1970-12-29 | |
JP12482370A JPS4816437B1 (enrdf_load_stackoverflow) | 1970-12-29 | 1970-12-29 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1327836A true GB1327836A (en) | 1973-08-22 |
Family
ID=27455019
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB2046771A Expired GB1327836A (en) | 1970-01-30 | 1971-04-19 | Process for forming a ternary material on a substrate |
Country Status (4)
Country | Link |
---|---|
CA (1) | CA934523A (enrdf_load_stackoverflow) |
DE (1) | DE2104329C3 (enrdf_load_stackoverflow) |
GB (1) | GB1327836A (enrdf_load_stackoverflow) |
NL (1) | NL7101215A (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2185758A (en) * | 1985-12-28 | 1987-07-29 | Canon Kk | Method for forming deposited film |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS514918B1 (enrdf_load_stackoverflow) * | 1971-05-04 | 1976-02-16 | ||
FR2419585A1 (fr) * | 1978-03-07 | 1979-10-05 | Thomson Csf | Procede d'obtention en phase gazeuse d'une couche epitaxiale de phosphure d'indium, et appareil d'application de ce procede |
-
1971
- 1971-01-29 CA CA104053A patent/CA934523A/en not_active Expired
- 1971-01-29 DE DE19712104329 patent/DE2104329C3/de not_active Expired
- 1971-01-29 NL NL7101215A patent/NL7101215A/xx unknown
- 1971-04-19 GB GB2046771A patent/GB1327836A/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2185758A (en) * | 1985-12-28 | 1987-07-29 | Canon Kk | Method for forming deposited film |
GB2185758B (en) * | 1985-12-28 | 1990-09-05 | Canon Kk | Method for forming deposited film |
Also Published As
Publication number | Publication date |
---|---|
NL7101215A (enrdf_load_stackoverflow) | 1971-08-03 |
CA934523A (en) | 1973-10-02 |
DE2104329A1 (de) | 1971-08-05 |
DE2104329C3 (de) | 1975-04-17 |
DE2104329B2 (de) | 1974-08-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
746 | Register noted 'licences of right' (sect. 46/1977) | ||
PE20 | Patent expired after termination of 20 years |