GB1325668A - Fabrication of complementary semiconductor devices - Google Patents
Fabrication of complementary semiconductor devicesInfo
- Publication number
- GB1325668A GB1325668A GB1398371*[A GB1398371A GB1325668A GB 1325668 A GB1325668 A GB 1325668A GB 1398371 A GB1398371 A GB 1398371A GB 1325668 A GB1325668 A GB 1325668A
- Authority
- GB
- United Kingdom
- Prior art keywords
- islands
- semi
- silicon
- masking
- conductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 7
- 230000000295 complement effect Effects 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000000463 material Substances 0.000 abstract 8
- 238000000151 deposition Methods 0.000 abstract 4
- 230000000873 masking effect Effects 0.000 abstract 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052732 germanium Inorganic materials 0.000 abstract 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 229910052698 phosphorus Inorganic materials 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract 2
- 229910010271 silicon carbide Inorganic materials 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 239000010432 diamond Substances 0.000 abstract 1
- 229910003460 diamond Inorganic materials 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 239000011810 insulating material Substances 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 229910052594 sapphire Inorganic materials 0.000 abstract 1
- 239000010980 sapphire Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 239000011029 spinel Substances 0.000 abstract 1
- 229910052596 spinel Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/03—Manufacture or treatment wherein the substrate comprises sapphire, e.g. silicon-on-sapphire [SOS]
Landscapes
- Thin Film Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US6515470A | 1970-08-19 | 1970-08-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1325668A true GB1325668A (en) | 1973-08-08 |
Family
ID=22060698
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1398371*[A Expired GB1325668A (en) | 1970-08-19 | 1971-05-10 | Fabrication of complementary semiconductor devices |
Country Status (5)
| Country | Link |
|---|---|
| CA (1) | CA934483A (enExample) |
| DE (1) | DE2122307A1 (enExample) |
| FR (1) | FR2102341B1 (enExample) |
| GB (1) | GB1325668A (enExample) |
| MY (1) | MY7400214A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2153146A (en) * | 1984-01-10 | 1985-08-14 | Ates Componenti Elettron | Improvements in or relating to manufacture of cmos transistors |
-
1971
- 1971-03-30 CA CA109183A patent/CA934483A/en not_active Expired
- 1971-05-06 DE DE19712122307 patent/DE2122307A1/de not_active Withdrawn
- 1971-05-10 GB GB1398371*[A patent/GB1325668A/en not_active Expired
- 1971-05-11 FR FR7116914A patent/FR2102341B1/fr not_active Expired
-
1974
- 1974-12-31 MY MY1974214A patent/MY7400214A/xx unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2153146A (en) * | 1984-01-10 | 1985-08-14 | Ates Componenti Elettron | Improvements in or relating to manufacture of cmos transistors |
Also Published As
| Publication number | Publication date |
|---|---|
| MY7400214A (en) | 1974-12-31 |
| FR2102341B1 (enExample) | 1977-08-05 |
| FR2102341A1 (enExample) | 1972-04-07 |
| DE2122307A1 (de) | 1972-02-24 |
| CA934483A (en) | 1973-09-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |