FR2102341A1 - - Google Patents

Info

Publication number
FR2102341A1
FR2102341A1 FR7116914A FR7116914A FR2102341A1 FR 2102341 A1 FR2102341 A1 FR 2102341A1 FR 7116914 A FR7116914 A FR 7116914A FR 7116914 A FR7116914 A FR 7116914A FR 2102341 A1 FR2102341 A1 FR 2102341A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7116914A
Other languages
French (fr)
Other versions
FR2102341B1 (enExample
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of FR2102341A1 publication Critical patent/FR2102341A1/fr
Application granted granted Critical
Publication of FR2102341B1 publication Critical patent/FR2102341B1/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01Manufacture or treatment
    • H10D86/03Manufacture or treatment wherein the substrate comprises sapphire, e.g. silicon-on-sapphire [SOS]
FR7116914A 1970-08-19 1971-05-11 Expired FR2102341B1 (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US6515470A 1970-08-19 1970-08-19

Publications (2)

Publication Number Publication Date
FR2102341A1 true FR2102341A1 (enExample) 1972-04-07
FR2102341B1 FR2102341B1 (enExample) 1977-08-05

Family

ID=22060698

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7116914A Expired FR2102341B1 (enExample) 1970-08-19 1971-05-11

Country Status (5)

Country Link
CA (1) CA934483A (enExample)
DE (1) DE2122307A1 (enExample)
FR (1) FR2102341B1 (enExample)
GB (1) GB1325668A (enExample)
MY (1) MY7400214A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1213120B (it) * 1984-01-10 1989-12-14 Ates Componenti Elettron Processo per la fabbricazione di transistori mos complementari a basse tensioni di soglia in circuiti integrati ad alta densita' e struttura da esso risultante.

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
(REVUE ALLEMANDE"RADIO-MENTOR",VOLUME 37,AVRIL 1971",SILICIUM AUF SAPHIR SCHALTET SCHNELL MOSFETS MIT 0,55 NEEC-VERZOGERUNGSZEIT",PAGE 175) *
MOSFETS MIT 0,55 NEEC-VERZOGERUNGSZEIT",PAGE 175) *
REVUE ALLEMANDE"RADIO-MENTOR",VOLUME 37,AVRIL 1971",SILICIUM AUF SAPHIR SCHALTET SCHNELL *

Also Published As

Publication number Publication date
MY7400214A (en) 1974-12-31
FR2102341B1 (enExample) 1977-08-05
GB1325668A (en) 1973-08-08
DE2122307A1 (de) 1972-02-24
CA934483A (en) 1973-09-25

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Legal Events

Date Code Title Description
ST Notification of lapse