CA934483A - Fabrication of complementary semiconductor devices - Google Patents

Fabrication of complementary semiconductor devices

Info

Publication number
CA934483A
CA934483A CA109183A CA109183A CA934483A CA 934483 A CA934483 A CA 934483A CA 109183 A CA109183 A CA 109183A CA 109183 A CA109183 A CA 109183A CA 934483 A CA934483 A CA 934483A
Authority
CA
Canada
Prior art keywords
fabrication
semiconductor devices
complementary semiconductor
complementary
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA109183A
Other languages
English (en)
Other versions
CA109183S (en
Inventor
R. Burns Joseph
Joseph H. Scott, Jr.
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Application granted granted Critical
Publication of CA934483A publication Critical patent/CA934483A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/03—Manufacture or treatment wherein the substrate comprises sapphire, e.g. silicon-on-sapphire [SOS]
CA109183A 1970-08-19 1971-03-30 Fabrication of complementary semiconductor devices Expired CA934483A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US6515470A 1970-08-19 1970-08-19

Publications (1)

Publication Number Publication Date
CA934483A true CA934483A (en) 1973-09-25

Family

ID=22060698

Family Applications (1)

Application Number Title Priority Date Filing Date
CA109183A Expired CA934483A (en) 1970-08-19 1971-03-30 Fabrication of complementary semiconductor devices

Country Status (5)

Country Link
CA (1) CA934483A (enExample)
DE (1) DE2122307A1 (enExample)
FR (1) FR2102341B1 (enExample)
GB (1) GB1325668A (enExample)
MY (1) MY7400214A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1213120B (it) * 1984-01-10 1989-12-14 Ates Componenti Elettron Processo per la fabbricazione di transistori mos complementari a basse tensioni di soglia in circuiti integrati ad alta densita' e struttura da esso risultante.

Also Published As

Publication number Publication date
MY7400214A (en) 1974-12-31
FR2102341B1 (enExample) 1977-08-05
FR2102341A1 (enExample) 1972-04-07
GB1325668A (en) 1973-08-08
DE2122307A1 (de) 1972-02-24

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