GB1318821A - Construction of packages for semiconductor devices - Google Patents

Construction of packages for semiconductor devices

Info

Publication number
GB1318821A
GB1318821A GB872071A GB1318821DA GB1318821A GB 1318821 A GB1318821 A GB 1318821A GB 872071 A GB872071 A GB 872071A GB 1318821D A GB1318821D A GB 1318821DA GB 1318821 A GB1318821 A GB 1318821A
Authority
GB
United Kingdom
Prior art keywords
conductors
support
glass frit
conductor
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB872071A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ferranti International PLC
Original Assignee
Ferranti PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ferranti PLC filed Critical Ferranti PLC
Publication of GB1318821A publication Critical patent/GB1318821A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/047—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads being parallel to the base
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49572—Lead-frames or other flat leads consisting of thin flexible metallic tape with or without a film carrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]

Abstract

1318821 Semi-conductor devices FERRANTI Ltd 24 March 1972 [26 March 1971 1 May 1971] 8720/71 and 12599/71 Heading H1K An enclosure 10 for a semi-conductor device (Fig. 2) comprises a lead frame (Fig. 1) wherein 14 conductors 12 extend in groups of 7 from opposing sides of a quadrangular boundary 13; the free ends of the conductors being tapered to mutually inclined points 16 distributed uniformly parallel to the opposing sides of the boundary. The ends of the conductors are rigidly secured to the periphery of a dished metal support 20 by a composite glass frit layer by cleaning and oxidizing the support, firming on the periphery a glass frit base layer 21 of m.p. >1000‹ C. and forming thereon a further glass frit layer 22 of m.p. 600‹ C. The central part of the support is deoxidized and selectively silver plated, and a gold flake 23 is centrally bonded to the silver, after which layer 22 is melted and the conductor ends placed thereon. A Si semi-conductor device 24 is alloyed to the gold flake, and the contacts of its remote face are connected to the adjacent conductor ends 16 by ultrasonically or thermocompressively bonded Au wires. A dished metal cap 26 is cleaned, oxidized and fired with a glass frit base layer 27 of m.p. > 1000‹ C. which is coated with epoxy resin 28 ,applied to the conductors, and cured at 100‹ C. The support, glass frit layers, and capping member should have similar coefficients of linear thermal expansion approximating to those of the conductors and of the semi-conductor, and the support and capping members may be, e.g. nickel iron alloy. In a modification (Fig. 3, not shown) the epoxy resin is replaceable by a glass frit coating of m.p. <550‹ C. which is melted to seal on the capping member, which with the support may be of nickel or steel. In a further modification (Fig. 4, not shown) an intermediate member, e.g. of Fe-Ni-Co is interposed between the support and the semiconductor device, and the conductors may be of Fe-Ni-Co. Subsequently the enclosure may be encased in a moulded plastic, e.g. epoxy resin or silicone compound (Fig. 5, not shown) after which the boundary is removed to leave discrete conductors which are bent at right angles. A preformed pattern of leads on an insulent substrate may be substituted for the Au wires. The process of construction may be carried out automatically.
GB872071A 1971-03-26 1971-03-26 Construction of packages for semiconductor devices Expired GB1318821A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB872071 1971-03-26

Publications (1)

Publication Number Publication Date
GB1318821A true GB1318821A (en) 1973-05-31

Family

ID=9857945

Family Applications (1)

Application Number Title Priority Date Filing Date
GB872071A Expired GB1318821A (en) 1971-03-26 1971-03-26 Construction of packages for semiconductor devices

Country Status (1)

Country Link
GB (1) GB1318821A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2280062A (en) * 1993-07-12 1995-01-18 Korea Electronics Telecomm Method of packaging a power semiconductor device and package produced by the method
GB2324411A (en) * 1997-04-18 1998-10-21 Lg Semicon Co Ltd Lead frame structure and semiconductor package
EP1187197A2 (en) * 2000-08-31 2002-03-13 Nec Corporation Package for a semiconductor chip with a thermally conductive base and resin walls

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2280062A (en) * 1993-07-12 1995-01-18 Korea Electronics Telecomm Method of packaging a power semiconductor device and package produced by the method
GB2280062B (en) * 1993-07-12 1997-04-09 Korea Electronics Telecomm Method of packaging a power semiconductor device and package produced by the method
GB2324411A (en) * 1997-04-18 1998-10-21 Lg Semicon Co Ltd Lead frame structure and semiconductor package
GB2324411B (en) * 1997-04-18 2000-02-02 Lg Semicon Co Ltd Lead frame and semiconductor package using same and fabrication method thereof
EP1187197A2 (en) * 2000-08-31 2002-03-13 Nec Corporation Package for a semiconductor chip with a thermally conductive base and resin walls
EP1187197A3 (en) * 2000-08-31 2004-03-17 NEC Compound Semiconductor Devices, Ltd. Package for a semiconductor chip with a thermally conductive base and resin walls
US7429791B2 (en) 2000-08-31 2008-09-30 Nec Corporation Semiconductor device in a resin sealed package with a radiating plate and manufacturing method thereof

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Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees