GB1318328A - Process of varying the characteristics of a semiconductor device - Google Patents

Process of varying the characteristics of a semiconductor device

Info

Publication number
GB1318328A
GB1318328A GB1974371*[A GB1974371A GB1318328A GB 1318328 A GB1318328 A GB 1318328A GB 1974371 A GB1974371 A GB 1974371A GB 1318328 A GB1318328 A GB 1318328A
Authority
GB
United Kingdom
Prior art keywords
base
transistor
diffusion
generator
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1974371*[A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intersil Corp
Original Assignee
Intersil Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intersil Inc filed Critical Intersil Inc
Publication of GB1318328A publication Critical patent/GB1318328A/en
Expired legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C17/00Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/06Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using diode elements
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C17/00Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C17/00Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/18Auxiliary circuits, e.g. for writing into memory
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B69/00Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Read Only Memory (AREA)
GB1974371*[A 1970-07-13 1971-06-09 Process of varying the characteristics of a semiconductor device Expired GB1318328A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US5453170A 1970-07-13 1970-07-13

Publications (1)

Publication Number Publication Date
GB1318328A true GB1318328A (en) 1973-05-31

Family

ID=21991749

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1974371*[A Expired GB1318328A (en) 1970-07-13 1971-06-09 Process of varying the characteristics of a semiconductor device

Country Status (3)

Country Link
FR (1) FR2098365B1 (nl)
GB (1) GB1318328A (nl)
NL (1) NL177453C (nl)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1720170A1 (en) * 2005-04-27 2006-11-08 STMicroelectronics, Inc. One-time programmable circuit exploiting the current amplification degradation of a bipolar transistor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3441804A (en) * 1966-05-02 1969-04-29 Hughes Aircraft Co Thin-film resistors

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1720170A1 (en) * 2005-04-27 2006-11-08 STMicroelectronics, Inc. One-time programmable circuit exploiting the current amplification degradation of a bipolar transistor

Also Published As

Publication number Publication date
NL177453B (nl) 1985-04-16
NL7109641A (nl) 1972-01-17
FR2098365A1 (nl) 1972-03-10
NL177453C (nl) 1985-09-16
FR2098365B1 (nl) 1976-04-16

Similar Documents

Publication Publication Date Title
GB935017A (en) Compound transistor
GB1532428A (en) Integrated circuits
GB1309310A (en) Fabrication of semiconductor devices
GB988902A (en) Semiconductor devices and methods of making same
GB920630A (en) Improvements in the fabrication of semiconductor elements
GB1169188A (en) Method of Manufacturing Semiconductor Devices
GB1174875A (en) Generator Voltage Regulating System
GB1243355A (en) Improvements in and relating to semiconductor devices
GB1173919A (en) Semiconductor Device with a pn-Junction
GB1217472A (en) Integrated circuits
GB1220023A (en) Integrated semiconductor circuit arrangement
US4021687A (en) Transistor circuit for deep saturation prevention
GB849477A (en) Improvements in or relating to semiconductor control devices
GB1318328A (en) Process of varying the characteristics of a semiconductor device
GB1245368A (en) Monolithic electric circuit
US4160918A (en) Integrated logic circuit
GB1472113A (en) Semiconductor device circuits
GB911668A (en) Methods of making semiconductor pn junction devices
ES428240A1 (es) Una disposicion de circuito de polarizacion para polarizar en sentido directo la union base-emisor de un transistor de salida.
GB1219660A (en) Integrated semiconductor circuits
GB1281769A (en) Method for making transistor including gain determining step
GB1482585A (en) Semiconductor device
GB899919A (en) Improvements in semi-conductive devices
US3617829A (en) Radiation-insensitive voltage standard means
GB1298053A (en) Semiconductor device for a trigger storage cell

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PE20 Patent expired after termination of 20 years