GB1318328A - Process of varying the characteristics of a semiconductor device - Google Patents
Process of varying the characteristics of a semiconductor deviceInfo
- Publication number
- GB1318328A GB1318328A GB1974371*[A GB1974371A GB1318328A GB 1318328 A GB1318328 A GB 1318328A GB 1974371 A GB1974371 A GB 1974371A GB 1318328 A GB1318328 A GB 1318328A
- Authority
- GB
- United Kingdom
- Prior art keywords
- base
- transistor
- diffusion
- generator
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/06—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using diode elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/18—Auxiliary circuits, e.g. for writing into memory
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
Landscapes
- Read Only Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US5453170A | 1970-07-13 | 1970-07-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1318328A true GB1318328A (en) | 1973-05-31 |
Family
ID=21991749
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1974371*[A Expired GB1318328A (en) | 1970-07-13 | 1971-06-09 | Process of varying the characteristics of a semiconductor device |
Country Status (3)
| Country | Link |
|---|---|
| FR (1) | FR2098365B1 (cg-RX-API-DMAC7.html) |
| GB (1) | GB1318328A (cg-RX-API-DMAC7.html) |
| NL (1) | NL177453C (cg-RX-API-DMAC7.html) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1720170A1 (en) * | 2005-04-27 | 2006-11-08 | STMicroelectronics, Inc. | One-time programmable circuit exploiting the current amplification degradation of a bipolar transistor |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3441804A (en) * | 1966-05-02 | 1969-04-29 | Hughes Aircraft Co | Thin-film resistors |
-
1971
- 1971-06-09 GB GB1974371*[A patent/GB1318328A/en not_active Expired
- 1971-07-12 FR FR7125445A patent/FR2098365B1/fr not_active Expired
- 1971-07-13 NL NLAANVRAGE7109641,A patent/NL177453C/xx not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1720170A1 (en) * | 2005-04-27 | 2006-11-08 | STMicroelectronics, Inc. | One-time programmable circuit exploiting the current amplification degradation of a bipolar transistor |
Also Published As
| Publication number | Publication date |
|---|---|
| NL177453C (nl) | 1985-09-16 |
| FR2098365B1 (cg-RX-API-DMAC7.html) | 1976-04-16 |
| NL7109641A (cg-RX-API-DMAC7.html) | 1972-01-17 |
| NL177453B (nl) | 1985-04-16 |
| FR2098365A1 (cg-RX-API-DMAC7.html) | 1972-03-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4476476A (en) | CMOS Input and output protection circuit | |
| GB1532428A (en) | Integrated circuits | |
| GB1309310A (en) | Fabrication of semiconductor devices | |
| GB1419834A (en) | Integrated semiconductor memory cell array | |
| GB1215491A (en) | Voltage distribution system in integrated circuits | |
| GB988902A (en) | Semiconductor devices and methods of making same | |
| GB920630A (en) | Improvements in the fabrication of semiconductor elements | |
| GB1169188A (en) | Method of Manufacturing Semiconductor Devices | |
| GB1174875A (en) | Generator Voltage Regulating System | |
| GB1220023A (en) | Integrated semiconductor circuit arrangement | |
| US4021687A (en) | Transistor circuit for deep saturation prevention | |
| GB849477A (en) | Improvements in or relating to semiconductor control devices | |
| ES366505A1 (es) | Disposicion de circuito electrico monolitico. | |
| US4160918A (en) | Integrated logic circuit | |
| GB911668A (en) | Methods of making semiconductor pn junction devices | |
| ES428240A1 (es) | Una disposicion de circuito de polarizacion para polarizar en sentido directo la union base-emisor de un transistor de salida. | |
| GB1281769A (en) | Method for making transistor including gain determining step | |
| GB1482585A (en) | Semiconductor device | |
| GB899919A (en) | Improvements in semi-conductive devices | |
| US3617829A (en) | Radiation-insensitive voltage standard means | |
| GB1298053A (en) | Semiconductor device for a trigger storage cell | |
| GB985667A (en) | A process for making a semiconductor device | |
| GB1074287A (en) | Improvements in and relating to semiconductor devices | |
| SU546042A1 (ru) | Кремниевый диффузионный транзистор | |
| GB1433667A (en) | Bipolar transistors |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PE20 | Patent expired after termination of 20 years |