GB1312909A - End point detection method - Google Patents

End point detection method

Info

Publication number
GB1312909A
GB1312909A GB5469871A GB5469871A GB1312909A GB 1312909 A GB1312909 A GB 1312909A GB 5469871 A GB5469871 A GB 5469871A GB 5469871 A GB5469871 A GB 5469871A GB 1312909 A GB1312909 A GB 1312909A
Authority
GB
United Kingdom
Prior art keywords
control element
etching
layer
sputter
chromium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5469871A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1312909A publication Critical patent/GB1312909A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Physical Vapour Deposition (AREA)
  • Investigating Or Analyzing Materials Using Thermal Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
GB5469871A 1970-12-31 1971-11-25 End point detection method Expired GB1312909A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10304570A 1970-12-31 1970-12-31

Publications (1)

Publication Number Publication Date
GB1312909A true GB1312909A (en) 1973-04-11

Family

ID=22293062

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5469871A Expired GB1312909A (en) 1970-12-31 1971-11-25 End point detection method

Country Status (5)

Country Link
US (1) US3664942A (enExample)
JP (1) JPS537789B1 (enExample)
DE (1) DE2152943C3 (enExample)
FR (1) FR2120697A5 (enExample)
GB (1) GB1312909A (enExample)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3971684A (en) * 1973-12-03 1976-07-27 Hewlett-Packard Company Etching thin film circuits and semiconductor chips
JPS50134769A (enExample) * 1974-04-15 1975-10-25
JPS5230851B2 (enExample) * 1974-10-11 1977-08-11
JPS5738897B2 (enExample) * 1974-11-19 1982-08-18
US4207105A (en) * 1975-01-27 1980-06-10 Fuji Photo Film Co., Ltd. Plasma-etching image in exposed AgX emulsion
JPS51105821A (en) * 1975-03-14 1976-09-20 Fuji Photo Film Co Ltd Masukugazono keiseihoho
US3986912A (en) * 1975-09-04 1976-10-19 International Business Machines Corporation Process for controlling the wall inclination of a plasma etched via hole
DE2603675A1 (de) * 1976-01-31 1977-08-04 Leybold Heraeus Gmbh & Co Kg Verfahren zur kontrolle des abtragens einer duennen schicht oder durch masken bestimmter schichtbereiche mit hilfe des ionen-aetzens
FR2343331A1 (fr) * 1976-03-05 1977-09-30 Thomson Csf Procede de controle d'usinage par bombardement ionique, d'une plaquette piezo-electrique
NL7605234A (nl) * 1976-05-17 1977-11-21 Philips Nv Werkwijze voor het vervaardigen van een halfge- leiderinrichting en halfgeleiderinrichting ver- vaardigd met behulp van de werkwijze.
US4312732A (en) * 1976-08-31 1982-01-26 Bell Telephone Laboratories, Incorporated Method for the optical monitoring of plasma discharge processing operations
US4528438A (en) * 1976-09-16 1985-07-09 Northern Telecom Limited End point control in plasma etching
NL7710164A (nl) * 1977-09-16 1979-03-20 Philips Nv Werkwijze ter behandeling van een eenkristal- lijn lichaam.
DE2815373A1 (de) * 1978-04-10 1979-10-11 Siemens Ag Verfahren und vorrichtung zum pruefen von hochpraezisen formatzteilen
US4246060A (en) * 1979-01-02 1981-01-20 Motorola, Inc. Plasma development process controller
US4307283A (en) * 1979-09-27 1981-12-22 Eaton Corporation Plasma etching apparatus II-conical-shaped projection
US4302311A (en) * 1979-11-19 1981-11-24 The United States Of America As Represented By The United States Department Of Energy Sputter coating of microspherical substrates by levitation
JPS5813625B2 (ja) * 1979-12-12 1983-03-15 超エル・エス・アイ技術研究組合 ガスプラズマ食刻法
US4361749A (en) * 1980-02-04 1982-11-30 Western Electric Co., Inc. Uniformly cooled plasma etching electrode
US4367044A (en) * 1980-12-31 1983-01-04 International Business Machines Corp. Situ rate and depth monitor for silicon etching
US4656331A (en) * 1982-04-26 1987-04-07 General Electric Company Infrared sensor for the control of plasma-jet spray coating and electric are heating processes
US4585920A (en) * 1982-05-21 1986-04-29 Tegal Corporation Plasma reactor removable insert
US4496448A (en) * 1983-10-13 1985-01-29 At&T Bell Laboratories Method for fabricating devices with DC bias-controlled reactive ion etching
CH669609A5 (enExample) * 1986-12-23 1989-03-31 Balzers Hochvakuum
US5170041A (en) * 1988-02-17 1992-12-08 Itt Corporation Transmission method to determine and control the temperature of wafers or thin layers with special application to semiconductors
JPH0349250U (enExample) * 1989-09-20 1991-05-14
US5200023A (en) * 1991-08-30 1993-04-06 International Business Machines Corp. Infrared thermographic method and apparatus for etch process monitoring and control
US5549756A (en) * 1994-02-02 1996-08-27 Applied Materials, Inc. Optical pyrometer for a thin film deposition system
US5948283A (en) * 1996-06-28 1999-09-07 Lam Research Corporation Method and apparatus for enhancing outcome uniformity of direct-plasma processes
US6184149B1 (en) * 1997-08-26 2001-02-06 Taiwan Semiconductor Manufacturing Co., Ltd. Method for monitoring self-aligned contact etching
US7048837B2 (en) * 2002-09-13 2006-05-23 Applied Materials, Inc. End point detection for sputtering and resputtering
US6965129B1 (en) * 2002-11-06 2005-11-15 T-Ram, Inc. Thyristor-based device having dual control ports
US7867403B2 (en) * 2006-06-05 2011-01-11 Jason Plumhoff Temperature control method for photolithographic substrate
US8702372B2 (en) 2010-05-03 2014-04-22 Bha Altair, Llc System and method for adjusting compressor inlet fluid temperature
TW201204849A (en) * 2010-07-16 2012-02-01 Hon Hai Prec Ind Co Ltd Processing apparatus for smoothing film material and evaporation deposition device with same
US9019108B2 (en) * 2010-08-05 2015-04-28 General Electric Company Thermal measurement system for fault detection within a power generation system
US9097182B2 (en) * 2010-08-05 2015-08-04 General Electric Company Thermal control system for fault detection and mitigation within a power generation system
JP6014661B2 (ja) * 2012-05-25 2016-10-25 東京エレクトロン株式会社 プラズマ処理装置、及びプラズマ処理方法
US20140042152A1 (en) * 2012-08-08 2014-02-13 Taiwan Semiconductor Manufacturing Company, Ltd. Variable frequency microwave device and method for rectifying wafer warpage
CN115632005A (zh) * 2022-10-20 2023-01-20 华虹半导体(无锡)有限公司 超结mos器件的反包外延层厚度监测方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3334228A (en) * 1964-11-06 1967-08-01 Gen Electric X-ray spectrometer having an x-ray source with a continuously cleaned x-ray target
US3395090A (en) * 1965-05-28 1968-07-30 Physics Technology Lab Inc Method of determining crystal grain orientation by comparing sputtered patterns
US3474021A (en) * 1966-01-12 1969-10-21 Ibm Method of forming openings using sequential sputtering and chemical etching

Also Published As

Publication number Publication date
FR2120697A5 (enExample) 1972-08-18
JPS537789B1 (enExample) 1978-03-22
DE2152943C3 (de) 1979-10-11
DE2152943A1 (de) 1972-07-20
DE2152943B2 (de) 1979-02-15
US3664942A (en) 1972-05-23

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee