GB1310868A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
GB1310868A
GB1310868A GB4166071A GB4166071A GB1310868A GB 1310868 A GB1310868 A GB 1310868A GB 4166071 A GB4166071 A GB 4166071A GB 4166071 A GB4166071 A GB 4166071A GB 1310868 A GB1310868 A GB 1310868A
Authority
GB
United Kingdom
Prior art keywords
thick
regions
electrodes
insulation
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4166071A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NCR Voyix Corp
National Cash Register Co
Original Assignee
NCR Corp
National Cash Register Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NCR Corp, National Cash Register Co filed Critical NCR Corp
Publication of GB1310868A publication Critical patent/GB1310868A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/472—Surface-channel CCD
    • H10D44/474—Two-phase CCD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Solid State Image Pick-Up Elements (AREA)
GB4166071A 1970-09-29 1971-09-07 Semiconductor device Expired GB1310868A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US7645370A 1970-09-29 1970-09-29

Publications (1)

Publication Number Publication Date
GB1310868A true GB1310868A (en) 1973-03-21

Family

ID=22132121

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4166071A Expired GB1310868A (en) 1970-09-29 1971-09-07 Semiconductor device

Country Status (9)

Country Link
AU (1) AU464863B2 (enExample)
BE (1) BE773210A (enExample)
CH (1) CH539922A (enExample)
DE (1) DE2146891A1 (enExample)
ES (1) ES395374A1 (enExample)
FR (1) FR2108053B1 (enExample)
GB (1) GB1310868A (enExample)
NL (1) NL7113199A (enExample)
ZA (1) ZA715975B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2190540A (en) * 1986-05-13 1987-11-18 Mitsubishi Electric Corp Solid state image sensor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2190540A (en) * 1986-05-13 1987-11-18 Mitsubishi Electric Corp Solid state image sensor
US4760273A (en) * 1986-05-13 1988-07-26 Mitsubishi Denki Kabushiki Kaisha Solid-state image sensor with groove-situated transfer elements
GB2190540B (en) * 1986-05-13 1990-02-21 Mitsubishi Electric Corp Solid-state image sensor

Also Published As

Publication number Publication date
NL7113199A (enExample) 1972-04-04
BE773210A (fr) 1972-01-17
AU3337571A (en) 1973-03-22
AU464863B2 (en) 1975-09-11
CH539922A (de) 1973-07-31
FR2108053A1 (enExample) 1972-05-12
DE2146891A1 (de) 1972-04-06
ZA715975B (en) 1972-05-31
ES395374A1 (es) 1975-06-16
FR2108053B1 (enExample) 1977-10-21

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees