GB1310868A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- GB1310868A GB1310868A GB4166071A GB4166071A GB1310868A GB 1310868 A GB1310868 A GB 1310868A GB 4166071 A GB4166071 A GB 4166071A GB 4166071 A GB4166071 A GB 4166071A GB 1310868 A GB1310868 A GB 1310868A
- Authority
- GB
- United Kingdom
- Prior art keywords
- thick
- regions
- electrodes
- insulation
- thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000009413 insulation Methods 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 230000004888 barrier function Effects 0.000 abstract 2
- 239000000969 carrier Substances 0.000 abstract 2
- 238000002347 injection Methods 0.000 abstract 2
- 239000007924 injection Substances 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- UFULAYFCSOUIOV-UHFFFAOYSA-N cysteamine Chemical compound NCCS UFULAYFCSOUIOV-UHFFFAOYSA-N 0.000 abstract 1
- 238000001514 detection method Methods 0.000 abstract 1
- 238000010894 electron beam technology Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76866—Surface Channel CCD
- H01L29/76875—Two-Phase CCD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42396—Gate electrodes for field effect devices for charge coupled devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
1310868 Semi-conductor devices NATIONAL CASH REGISTER CO 7 Sept 1971 [29 Sept 1970] 41660/71 Heading H1K A charge coupled device consists of a semiductor substrate and a layer of insulation on one face having a series of alternately thick and thin regions between minority carrier injection and detection locations. The transfer electrodes, each consisting of a metal layer overlying adjacent thick and thin regions form two alternating groups supplied with oppositely phased pulse waveforms. As shown, Fig. 1, the series of regions is disposed within an etched channel in a much thicker layer 14 of silica, on which the conductive connections to the electrodes are located. The minority carrier injection may be effected, as shown, by an avalanche device consisting of a metal layer on thin insulation 35, by an electron beam, or by a PN or Schottky barrier on the N-type silicon substrate. Transferred minority carriers can also be detected by such a barrier. The thin regions under the transfer electrodes may be 800-1000 Š thick and the thick regions 100-500 Š thicker. In operation the pulses applied to the two groups of electrodes are of the same magnitude. Backward movement of the carriers is avoided because on account of the greater thickness of insulation the potential well beneath the leading edge of each transfer electrode is always shallower than that at the trailing edge.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US7645370A | 1970-09-29 | 1970-09-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1310868A true GB1310868A (en) | 1973-03-21 |
Family
ID=22132121
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB4166071A Expired GB1310868A (en) | 1970-09-29 | 1971-09-07 | Semiconductor device |
Country Status (9)
| Country | Link |
|---|---|
| AU (1) | AU464863B2 (en) |
| BE (1) | BE773210A (en) |
| CH (1) | CH539922A (en) |
| DE (1) | DE2146891A1 (en) |
| ES (1) | ES395374A1 (en) |
| FR (1) | FR2108053B1 (en) |
| GB (1) | GB1310868A (en) |
| NL (1) | NL7113199A (en) |
| ZA (1) | ZA715975B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2190540A (en) * | 1986-05-13 | 1987-11-18 | Mitsubishi Electric Corp | Solid state image sensor |
-
1971
- 1971-09-07 ZA ZA715975A patent/ZA715975B/en unknown
- 1971-09-07 GB GB4166071A patent/GB1310868A/en not_active Expired
- 1971-09-13 AU AU33375/71A patent/AU464863B2/en not_active Expired
- 1971-09-17 CH CH1358271A patent/CH539922A/en not_active IP Right Cessation
- 1971-09-20 DE DE19712146891 patent/DE2146891A1/en active Pending
- 1971-09-23 ES ES395374A patent/ES395374A1/en not_active Expired
- 1971-09-24 NL NL7113199A patent/NL7113199A/xx unknown
- 1971-09-27 FR FR7134590A patent/FR2108053B1/fr not_active Expired
- 1971-09-28 BE BE773210A patent/BE773210A/en unknown
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2190540A (en) * | 1986-05-13 | 1987-11-18 | Mitsubishi Electric Corp | Solid state image sensor |
| US4760273A (en) * | 1986-05-13 | 1988-07-26 | Mitsubishi Denki Kabushiki Kaisha | Solid-state image sensor with groove-situated transfer elements |
| GB2190540B (en) * | 1986-05-13 | 1990-02-21 | Mitsubishi Electric Corp | Solid-state image sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| AU3337571A (en) | 1973-03-22 |
| AU464863B2 (en) | 1975-09-11 |
| NL7113199A (en) | 1972-04-04 |
| ES395374A1 (en) | 1975-06-16 |
| ZA715975B (en) | 1972-05-31 |
| BE773210A (en) | 1972-01-17 |
| DE2146891A1 (en) | 1972-04-06 |
| FR2108053A1 (en) | 1972-05-12 |
| CH539922A (en) | 1973-07-31 |
| FR2108053B1 (en) | 1977-10-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |