GB1309108A - Apparatus and method for processing semiconductors - Google Patents

Apparatus and method for processing semiconductors

Info

Publication number
GB1309108A
GB1309108A GB4513670A GB4513670A GB1309108A GB 1309108 A GB1309108 A GB 1309108A GB 4513670 A GB4513670 A GB 4513670A GB 4513670 A GB4513670 A GB 4513670A GB 1309108 A GB1309108 A GB 1309108A
Authority
GB
United Kingdom
Prior art keywords
melt
bodies
zinc
container
gallium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4513670A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intel Corp
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of GB1309108A publication Critical patent/GB1309108A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/04—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/041—Doping control in crystal growth
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/107—Melt

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Weting (AREA)

Abstract

1309108 Treating semi-conductors INTEL CORP 22 Sept 1970 [24 Sept 1969] 45136/70 Heading H1K A stack of semi-conductor bodies separated by liquid permeable spacers is inserted into a bath of molten material which is isolated from the atmosphere and comprises a material which diffuses into the bodies. After completion of the diffusion treatment the bodies are removed from the melt and the adhering bath material removed. In the embodiment the bodies are of aluminium doped zinc sulphide and the melt of zinc. To reduce thermal shock the zinc is held just above its melting point in heated crucible 10 during insertion of the stack, which is disposed in permeable container 14. Loss of zinc vapour is reduced by plugs of quartz wool at 52 between crucible and container and at 48 in the mouth of the container between baffles 44, 46, The upper baffle 44 co-operates with a further baffle 62 to direct inert gas through aligned holes 58, 60 to isolate the melt from the atmosphere. After treatment at 800‹ C. for an hour the stack is removed and placed in a melt of indium or gallium. On removal from this melt residual metal adhering to the bodies is removed by wiping with quartz wool while the bodies are located on the heater and then etching in hydrochloric acid. In an alternative method in which the zinc is alloyed with indium or gallium the intermediate step of immersion in a gallium or indium melt is dispensed with. The apparatus may be modified to make the partitions slidably removable, and to dispense with container 14, and isolation from atmosphere may alternatively be provided by floating a layer of liquid boron oxide or solid particulate carbon on the melt. Suitable materials for the apparatus are quartz, graphite, vitreous carbon, boron nitride, alumina, zirconia and for lower temperatures heat resistant glass.
GB4513670A 1969-09-24 1970-09-22 Apparatus and method for processing semiconductors Expired GB1309108A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US86073669A 1969-09-24 1969-09-24

Publications (1)

Publication Number Publication Date
GB1309108A true GB1309108A (en) 1973-03-07

Family

ID=25333907

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4513670A Expired GB1309108A (en) 1969-09-24 1970-09-22 Apparatus and method for processing semiconductors

Country Status (9)

Country Link
US (1) US3650823A (en)
BE (1) BE756471A (en)
CA (1) CA935073A (en)
CH (1) CH515071A (en)
DE (1) DE2046036A1 (en)
FR (1) FR2062230A5 (en)
GB (1) GB1309108A (en)
IL (1) IL35037A (en)
NL (1) NL140435B (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS577131A (en) * 1980-06-16 1982-01-14 Junichi Nishizawa Manufacture of p-n junction
US5169799A (en) * 1988-03-16 1992-12-08 Sumitomo Electric Industries, Ltd. Method for forming a doped ZnSe single crystal
JP2717256B2 (en) * 1988-03-16 1998-02-18 社団法人生産技術振興協会 Semiconductor crystal
US6143630A (en) * 1994-06-09 2000-11-07 Texas Instruments Incorporated Method of impurity gettering
JP3823160B2 (en) * 1997-04-03 2006-09-20 野村マイクロ・サイエンス株式会社 Cleaning method inside semiconductor substrate
US6270727B1 (en) 1998-07-31 2001-08-07 Leco Corporation Analytical crucible
US20020001947A1 (en) * 1998-09-02 2002-01-03 David A. Cathey Semiconductor processing method using high pressure liquid media treatment
US20030026601A1 (en) * 2001-07-31 2003-02-06 The Arizona Board Of Regents On Behalf Of The University Of Arizona Vapor deposition and in-situ purification of organic molecules
US7125453B2 (en) * 2002-01-31 2006-10-24 General Electric Company High temperature high pressure capsule for processing materials in supercritical fluids
US7063741B2 (en) * 2002-03-27 2006-06-20 General Electric Company High pressure high temperature growth of crystalline group III metal nitrides
JP4276627B2 (en) 2005-01-12 2009-06-10 ソルボサーマル結晶成長技術研究組合 Pressure vessel for single crystal growth and method for producing the same
US7704324B2 (en) * 2005-01-25 2010-04-27 General Electric Company Apparatus for processing materials in supercritical fluids and methods thereof
US7942970B2 (en) 2005-12-20 2011-05-17 Momentive Performance Materials Inc. Apparatus for making crystalline composition

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3341355A (en) * 1962-10-19 1967-09-12 Fuller Merriam Company Process for impregnating porous bodies with a solid fusible substance

Also Published As

Publication number Publication date
FR2062230A5 (en) 1971-06-25
CH515071A (en) 1971-11-15
DE2046036A1 (en) 1971-04-01
BE756471A (en) 1971-03-01
CA935073A (en) 1973-10-09
IL35037A0 (en) 1970-10-30
NL140435B (en) 1973-12-17
IL35037A (en) 1973-06-29
NL7013967A (en) 1971-03-26
US3650823A (en) 1972-03-21

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees