CA935073A - Apparatus and method for processing semiconductors - Google Patents

Apparatus and method for processing semiconductors

Info

Publication number
CA935073A
CA935073A CA091802A CA91802A CA935073A CA 935073 A CA935073 A CA 935073A CA 091802 A CA091802 A CA 091802A CA 91802 A CA91802 A CA 91802A CA 935073 A CA935073 A CA 935073A
Authority
CA
Canada
Prior art keywords
processing semiconductors
semiconductors
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA091802A
Inventor
A. Mead Carver
O. Mccaldin James
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intel Corp
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Application granted granted Critical
Publication of CA935073A publication Critical patent/CA935073A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/04—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/041—Doping control in crystal growth
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/107—Melt

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Weting (AREA)
CA091802A 1969-09-24 1970-08-27 Apparatus and method for processing semiconductors Expired CA935073A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US86073669A 1969-09-24 1969-09-24

Publications (1)

Publication Number Publication Date
CA935073A true CA935073A (en) 1973-10-09

Family

ID=25333907

Family Applications (1)

Application Number Title Priority Date Filing Date
CA091802A Expired CA935073A (en) 1969-09-24 1970-08-27 Apparatus and method for processing semiconductors

Country Status (9)

Country Link
US (1) US3650823A (en)
BE (1) BE756471A (en)
CA (1) CA935073A (en)
CH (1) CH515071A (en)
DE (1) DE2046036A1 (en)
FR (1) FR2062230A5 (en)
GB (1) GB1309108A (en)
IL (1) IL35037A (en)
NL (1) NL140435B (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS577131A (en) * 1980-06-16 1982-01-14 Junichi Nishizawa Manufacture of p-n junction
JP2717256B2 (en) * 1988-03-16 1998-02-18 社団法人生産技術振興協会 Semiconductor crystal
US5169799A (en) * 1988-03-16 1992-12-08 Sumitomo Electric Industries, Ltd. Method for forming a doped ZnSe single crystal
US6143630A (en) * 1994-06-09 2000-11-07 Texas Instruments Incorporated Method of impurity gettering
JP3823160B2 (en) * 1997-04-03 2006-09-20 野村マイクロ・サイエンス株式会社 Cleaning method inside semiconductor substrate
US6270727B1 (en) 1998-07-31 2001-08-07 Leco Corporation Analytical crucible
US6333264B1 (en) 1998-09-02 2001-12-25 Micron Technology, Inc. Semiconductor processing method using high pressure liquid media treatment
US20030026601A1 (en) * 2001-07-31 2003-02-06 The Arizona Board Of Regents On Behalf Of The University Of Arizona Vapor deposition and in-situ purification of organic molecules
US7125453B2 (en) * 2002-01-31 2006-10-24 General Electric Company High temperature high pressure capsule for processing materials in supercritical fluids
US7063741B2 (en) * 2002-03-27 2006-06-20 General Electric Company High pressure high temperature growth of crystalline group III metal nitrides
JP4276627B2 (en) 2005-01-12 2009-06-10 ソルボサーマル結晶成長技術研究組合 Pressure vessel for single crystal growth and method for producing the same
US7704324B2 (en) * 2005-01-25 2010-04-27 General Electric Company Apparatus for processing materials in supercritical fluids and methods thereof
US7942970B2 (en) 2005-12-20 2011-05-17 Momentive Performance Materials Inc. Apparatus for making crystalline composition

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3341355A (en) * 1962-10-19 1967-09-12 Fuller Merriam Company Process for impregnating porous bodies with a solid fusible substance

Also Published As

Publication number Publication date
GB1309108A (en) 1973-03-07
US3650823A (en) 1972-03-21
IL35037A (en) 1973-06-29
CH515071A (en) 1971-11-15
FR2062230A5 (en) 1971-06-25
NL7013967A (en) 1971-03-26
DE2046036A1 (en) 1971-04-01
NL140435B (en) 1973-12-17
BE756471A (en) 1971-03-01
IL35037A0 (en) 1970-10-30

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