GB1295530A - - Google Patents
Info
- Publication number
- GB1295530A GB1295530A GB1295530DA GB1295530A GB 1295530 A GB1295530 A GB 1295530A GB 1295530D A GB1295530D A GB 1295530DA GB 1295530 A GB1295530 A GB 1295530A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- type
- contact
- sio
- june
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000003287 optical effect Effects 0.000 abstract 4
- 229910004298 SiO 2 Inorganic materials 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 230000000694 effects Effects 0.000 abstract 2
- 239000010931 gold Substances 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 229910052751 metal Inorganic materials 0.000 abstract 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical group CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 abstract 1
- 229910007569 Zn—Au Inorganic materials 0.000 abstract 1
- 238000010521 absorption reaction Methods 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- 229910052790 beryllium Inorganic materials 0.000 abstract 1
- 239000001273 butane Substances 0.000 abstract 1
- 229910052793 cadmium Inorganic materials 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 abstract 1
- 238000005401 electroluminescence Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 abstract 1
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 abstract 1
- 239000010453 quartz Substances 0.000 abstract 1
- 229910052711 selenium Inorganic materials 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052717 sulfur Inorganic materials 0.000 abstract 1
- 229910052714 tellurium Inorganic materials 0.000 abstract 1
- 238000005979 thermal decomposition reaction Methods 0.000 abstract 1
- 229910052718 tin Inorganic materials 0.000 abstract 1
- 229910052725 zinc Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
- Die Bonding (AREA)
- Led Device Packages (AREA)
Abstract
1295530 Electroluminescence WESTERN ELECTRIC CO Inc 23 June 1970 [23 June 1969] 30336/70 Heading C4S [Also in Division H1] A GaP electroluminescent device includes a diode with two major faces parallel to P-N junction and electrical contacts on same, one comprising an SiO 2 layer 23 covering at least 75% but not all the major surface and a metal layer 25, preferably gold with 1 to 4% Si when the one major face is N-type, contacting substantially the remainder of the surface and extending over substantially all the SiO 2 . A support 27 is bonded to the diode and has a metallized portion 26 in contact with the metal layer. Preferably the other contact is Zn-Au alloy. The effects of contact optical absorption are considered, Fig. 1 (not shown) illustrating optical output efficiency as a function of absorbing contact area, and free carrier concentrations instanced are 5 x 10<SP>7</SP> to 4 Î 10<SP>18</SP>, e.g. 8 x 10<SP>17</SP>, and resistivities 0À07 to 0À10 # cm. for N-type and 0À08 to 0À12 # cm. for P-type. The design is stated to reduce optical loss and electric current nonuniformity without significantly increasing thermal impedance. Reference is made to Zn, Cd, Be, Mg, Ge dopants for P-type contacts and S, Se, Te, Si and Sn for N-type contacts, butane stated as unacceptable in practice. A 0À2 Á SiO 2 layer (23) (Figs. 2A to 2E, not shown) may be obtained by thermal decomposition of ethyl silicate at 650‹ C., or from evaporation of quartz by electrons, holes (24) etched, Au -2% Si layer (25) evaporated and alloyed, grooves (26) scribed, and the devices separated by sawing or cleaving, preferably assisted by etching which effects rounding the top edges to enhance optical efficiency. Layer 25 is bonded to circuit portion (26) of a printed circuit board. The P-side contact is a Au-Zn wire (28).
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US83538469A | 1969-06-23 | 1969-06-23 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1295530A true GB1295530A (en) | 1972-11-08 |
Family
ID=25269375
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1295530D Expired GB1295530A (en) | 1969-06-23 | 1970-06-23 |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS4940395B1 (en) |
| BE (1) | BE752274A (en) |
| DE (1) | DE2031021A1 (en) |
| FR (1) | FR2053934A5 (en) |
| GB (1) | GB1295530A (en) |
| NL (1) | NL7009114A (en) |
| SE (1) | SE352510B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108493307A (en) * | 2018-05-04 | 2018-09-04 | 佛山市国星半导体技术有限公司 | A kind of packed LED chip and preparation method thereof |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2402717A1 (en) * | 1973-01-22 | 1974-08-08 | Tokyo Shibaura Electric Co | LIGHT EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING IT |
| JPH0671419U (en) * | 1993-03-22 | 1994-10-07 | 大塚包装工業株式会社 | Partition of packaging box |
-
1970
- 1970-06-15 SE SE827370A patent/SE352510B/xx unknown
- 1970-06-19 BE BE752274D patent/BE752274A/en unknown
- 1970-06-22 FR FR7022942A patent/FR2053934A5/fr not_active Expired
- 1970-06-22 JP JP5358170A patent/JPS4940395B1/ja active Pending
- 1970-06-22 NL NL7009114A patent/NL7009114A/xx unknown
- 1970-06-23 GB GB1295530D patent/GB1295530A/en not_active Expired
- 1970-06-23 DE DE19702031021 patent/DE2031021A1/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108493307A (en) * | 2018-05-04 | 2018-09-04 | 佛山市国星半导体技术有限公司 | A kind of packed LED chip and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2031021A1 (en) | 1971-02-04 |
| FR2053934A5 (en) | 1971-04-16 |
| NL7009114A (en) | 1970-12-28 |
| BE752274A (en) | 1970-12-01 |
| JPS4940395B1 (en) | 1974-11-01 |
| SE352510B (en) | 1972-12-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PE20 | Patent expired after termination of 20 years |