GB1289953A - - Google Patents

Info

Publication number
GB1289953A
GB1289953A GB1289953DA GB1289953A GB 1289953 A GB1289953 A GB 1289953A GB 1289953D A GB1289953D A GB 1289953DA GB 1289953 A GB1289953 A GB 1289953A
Authority
GB
United Kingdom
Prior art keywords
field electrode
emitter
electrode
base
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GB1289953A publication Critical patent/GB1289953A/en
Expired legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/404—Multiple field plate structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
    • H01L27/0716—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with vertical bipolar transistors and diodes, or capacitors, or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
    • H01L27/0733—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors in combination with capacitors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

1289953 Semi-conductor devices SIGNETICS CORP 8 Jan 1970 [16 Jan 1969] 936/70 Heading H1K A capacitive field electrode 31 covers substantially all of an oxide layer 13 where it overlies the depletion region 33 associated with PN junction 18 in a high voltage transistor or diode to improve the breakdown properties of the junction. A conductor lying on the oxide layer 13 in the plane of the field electrode 31 carries current to a contact substantially surrounded by the field electrode 31. In the embodiment shown the field electrode 31 has a gap through which conductive tracks 27, 28 extend to make contact with, in the case of a transistor as shown, diffused base and emitter regions 17, 19. The width of any such gap in the field electrode 31 is not greater than twice the depth of the depletion region 33, so that the electrode is effectively continuous. The device illustrated is made of Si and has an N-type diffused collector region 16 and an N+ region 15 diffused from the lower surface of the device. A plurality of such devices may be formed in the same body, and the field electrode 31 may be connected either to the emitter or to the base electrode, or may be independently biased, in which case it may be used to modulate the device. The invention may be applied to transistors or diodes in integrated circuits employing dielectric, PN junction or air isolation. Figs. 6-8 (not shown) illustrate a circuit on a polycrystalline Si support using dielectric isolation and including four conventional transistors, two transistors (T5, T6) having field electrodes and two diodes. The field electrode of each of the transistors (T5, T6) is divided into two parts, one of which (63) is connected to two emitter electrodes (59) respectively attached to spaced emitter regions (52), and the other of which (61) is connected to three base electrodes (58) alternating with the emitter electrodes so that the emitter, base and field electrode structure as a whole has an interdigitated configuration. Provided that the gap between the two parts (61, 63) of the field electrode does not exceed twice the depth of the depletion region, protection against breakdown is as effective as if a continuous field electrode was used. A field electrode for a dielectric isolated diode is also described (Fig. 12, not shown). A final embodiment comprises a bipolar transistor with a divided collector/base junction field electrode (106, 107), Fig. 13 (not shown), having its two parts connected respectively to the emitter and base electrode, the transistor being formed in an island defined in an epitaxial layer (92) by diffused isolation walls (94), and wherein the isolation PN junction depletion region is also covered by a capacitive field electrode (112).
GB1289953D 1969-01-16 1970-01-08 Expired GB1289953A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US79166569A 1969-01-16 1969-01-16

Publications (1)

Publication Number Publication Date
GB1289953A true GB1289953A (en) 1972-09-20

Family

ID=25154415

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1289953D Expired GB1289953A (en) 1969-01-16 1970-01-08

Country Status (4)

Country Link
DE (1) DE2001565A1 (en)
FR (1) FR2028452B1 (en)
GB (1) GB1289953A (en)
NL (1) NL7000511A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2458148A1 (en) * 1979-05-31 1980-12-26 Siemens Ag LIGHT-CONTROLLED TRANSISTOR

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4232328A (en) * 1978-12-20 1980-11-04 Bell Telephone Laboratories, Incorporated Dielectrically-isolated integrated circuit complementary transistors for high voltage use

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1430438A (en) * 1964-04-16 1966-03-04 Northern Electric Co Semiconductor devices incorporating a conductive screen

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2458148A1 (en) * 1979-05-31 1980-12-26 Siemens Ag LIGHT-CONTROLLED TRANSISTOR

Also Published As

Publication number Publication date
DE2001565A1 (en) 1970-07-30
FR2028452A1 (en) 1970-10-09
NL7000511A (en) 1970-07-20
FR2028452B1 (en) 1974-03-01

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee