GB1288564A - - Google Patents
Info
- Publication number
- GB1288564A GB1288564A GB429669A GB1288564DA GB1288564A GB 1288564 A GB1288564 A GB 1288564A GB 429669 A GB429669 A GB 429669A GB 1288564D A GB1288564D A GB 1288564DA GB 1288564 A GB1288564 A GB 1288564A
- Authority
- GB
- United Kingdom
- Prior art keywords
- pips
- gold
- bonding
- silicon
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 4
- 229910052737 gold Inorganic materials 0.000 abstract 4
- 239000010931 gold Substances 0.000 abstract 4
- 239000004065 semiconductor Substances 0.000 abstract 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 abstract 3
- 229910052804 chromium Inorganic materials 0.000 abstract 3
- 239000011651 chromium Substances 0.000 abstract 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract 2
- 229910052751 metal Inorganic materials 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 238000002161 passivation Methods 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 229910052709 silver Inorganic materials 0.000 abstract 2
- 239000004332 silver Substances 0.000 abstract 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 239000004020 conductor Substances 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 238000009713 electroplating Methods 0.000 abstract 1
- 239000011133 lead Substances 0.000 abstract 1
- 150000002739 metals Chemical class 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 239000011733 molybdenum Substances 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- RJCRUVXAWQRZKQ-UHFFFAOYSA-N oxosilicon;silicon Chemical compound [Si].[Si]=O RJCRUVXAWQRZKQ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- 238000005245 sintering Methods 0.000 abstract 1
- 229910000679 solder Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
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- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB429669 | 1969-01-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1288564A true GB1288564A (enrdf_load_stackoverflow) | 1972-09-13 |
Family
ID=9774489
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB429669A Expired GB1288564A (enrdf_load_stackoverflow) | 1969-01-24 | 1969-01-24 |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB1288564A (enrdf_load_stackoverflow) |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2383522A1 (fr) * | 1977-03-08 | 1978-10-06 | Ates Componenti Elettron | Procede de formation de zones metallisees sur une serie de dispositifs a semi-conducteurs |
| US4216488A (en) * | 1978-07-31 | 1980-08-05 | Hutson Jearld L | Lateral semiconductor diac |
| GB2157079A (en) * | 1984-03-30 | 1985-10-16 | Mitsubishi Electric Corp | Electrode arrangement for semiconductor devices |
| WO1996031905A1 (en) * | 1995-04-05 | 1996-10-10 | Mcnc | A solder bump structure for a microelectronic substrate |
| US6388203B1 (en) | 1995-04-04 | 2002-05-14 | Unitive International Limited | Controlled-shaped solder reservoirs for increasing the volume of solder bumps, and structures formed thereby |
| US6960828B2 (en) | 2002-06-25 | 2005-11-01 | Unitive International Limited | Electronic structures including conductive shunt layers |
| US7049216B2 (en) | 2003-10-14 | 2006-05-23 | Unitive International Limited | Methods of providing solder structures for out plane connections |
| US7081404B2 (en) | 2003-02-18 | 2006-07-25 | Unitive Electronics Inc. | Methods of selectively bumping integrated circuit substrates and related structures |
| US7156284B2 (en) | 2000-12-15 | 2007-01-02 | Unitive International Limited | Low temperature methods of bonding components and related structures |
| US7213740B2 (en) | 2000-11-10 | 2007-05-08 | Unitive International Limited | Optical structures including liquid bumps and related methods |
| US7358174B2 (en) | 2004-04-13 | 2008-04-15 | Amkor Technology, Inc. | Methods of forming solder bumps on exposed metal pads |
| US7531898B2 (en) | 2002-06-25 | 2009-05-12 | Unitive International Limited | Non-Circular via holes for bumping pads and related structures |
| US7547623B2 (en) | 2002-06-25 | 2009-06-16 | Unitive International Limited | Methods of forming lead free solder bumps |
| US7674701B2 (en) | 2006-02-08 | 2010-03-09 | Amkor Technology, Inc. | Methods of forming metal layers using multi-layer lift-off patterns |
| US7932615B2 (en) | 2006-02-08 | 2011-04-26 | Amkor Technology, Inc. | Electronic devices including solder bumps on compliant dielectric layers |
-
1969
- 1969-01-24 GB GB429669A patent/GB1288564A/en not_active Expired
Cited By (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2383522A1 (fr) * | 1977-03-08 | 1978-10-06 | Ates Componenti Elettron | Procede de formation de zones metallisees sur une serie de dispositifs a semi-conducteurs |
| US4216488A (en) * | 1978-07-31 | 1980-08-05 | Hutson Jearld L | Lateral semiconductor diac |
| GB2157079A (en) * | 1984-03-30 | 1985-10-16 | Mitsubishi Electric Corp | Electrode arrangement for semiconductor devices |
| US4709469A (en) * | 1984-03-30 | 1987-12-01 | Mitsubishi Denki Kabushiki Kaisha | Method of making a bipolar transistor with polycrystalline contacts |
| US6388203B1 (en) | 1995-04-04 | 2002-05-14 | Unitive International Limited | Controlled-shaped solder reservoirs for increasing the volume of solder bumps, and structures formed thereby |
| US6392163B1 (en) | 1995-04-04 | 2002-05-21 | Unitive International Limited | Controlled-shaped solder reservoirs for increasing the volume of solder bumps |
| WO1996031905A1 (en) * | 1995-04-05 | 1996-10-10 | Mcnc | A solder bump structure for a microelectronic substrate |
| US5892179A (en) * | 1995-04-05 | 1999-04-06 | Mcnc | Solder bumps and structures for integrated redistribution routing conductors |
| US6329608B1 (en) | 1995-04-05 | 2001-12-11 | Unitive International Limited | Key-shaped solder bumps and under bump metallurgy |
| US6389691B1 (en) | 1995-04-05 | 2002-05-21 | Unitive International Limited | Methods for forming integrated redistribution routing conductors and solder bumps |
| US7213740B2 (en) | 2000-11-10 | 2007-05-08 | Unitive International Limited | Optical structures including liquid bumps and related methods |
| US7156284B2 (en) | 2000-12-15 | 2007-01-02 | Unitive International Limited | Low temperature methods of bonding components and related structures |
| US7547623B2 (en) | 2002-06-25 | 2009-06-16 | Unitive International Limited | Methods of forming lead free solder bumps |
| US7839000B2 (en) | 2002-06-25 | 2010-11-23 | Unitive International Limited | Solder structures including barrier layers with nickel and/or copper |
| US8294269B2 (en) | 2002-06-25 | 2012-10-23 | Unitive International | Electronic structures including conductive layers comprising copper and having a thickness of at least 0.5 micrometers |
| US7297631B2 (en) | 2002-06-25 | 2007-11-20 | Unitive International Limited | Methods of forming electronic structures including conductive shunt layers and related structures |
| US7879715B2 (en) | 2002-06-25 | 2011-02-01 | Unitive International Limited | Methods of forming electronic structures including conductive shunt layers and related structures |
| US7531898B2 (en) | 2002-06-25 | 2009-05-12 | Unitive International Limited | Non-Circular via holes for bumping pads and related structures |
| US6960828B2 (en) | 2002-06-25 | 2005-11-01 | Unitive International Limited | Electronic structures including conductive shunt layers |
| US7579694B2 (en) | 2003-02-18 | 2009-08-25 | Unitive International Limited | Electronic devices including offset conductive bumps |
| US7081404B2 (en) | 2003-02-18 | 2006-07-25 | Unitive Electronics Inc. | Methods of selectively bumping integrated circuit substrates and related structures |
| US7659621B2 (en) | 2003-10-14 | 2010-02-09 | Unitive International Limited | Solder structures for out of plane connections |
| US7049216B2 (en) | 2003-10-14 | 2006-05-23 | Unitive International Limited | Methods of providing solder structures for out plane connections |
| US7358174B2 (en) | 2004-04-13 | 2008-04-15 | Amkor Technology, Inc. | Methods of forming solder bumps on exposed metal pads |
| US7674701B2 (en) | 2006-02-08 | 2010-03-09 | Amkor Technology, Inc. | Methods of forming metal layers using multi-layer lift-off patterns |
| US7932615B2 (en) | 2006-02-08 | 2011-04-26 | Amkor Technology, Inc. | Electronic devices including solder bumps on compliant dielectric layers |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |