GB1265318A - - Google Patents

Info

Publication number
GB1265318A
GB1265318A GB2294868A GB1265318DA GB1265318A GB 1265318 A GB1265318 A GB 1265318A GB 2294868 A GB2294868 A GB 2294868A GB 1265318D A GB1265318D A GB 1265318DA GB 1265318 A GB1265318 A GB 1265318A
Authority
GB
United Kingdom
Prior art keywords
alloy
size
thermoelectric
hot
doped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2294868A
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GB1265318A publication Critical patent/GB1265318A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80Constructional details
    • H10N10/85Thermoelectric active materials
    • H10N10/851Thermoelectric active materials comprising inorganic compositions
    • H10N10/8556Thermoelectric active materials comprising inorganic compositions comprising compounds containing germanium or silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Silicon Compounds (AREA)
  • Powder Metallurgy (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
GB2294868A 1968-05-14 1968-05-14 Expired GB1265318A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB2294868 1968-05-14

Publications (1)

Publication Number Publication Date
GB1265318A true GB1265318A (ja) 1972-03-01

Family

ID=10187656

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2294868A Expired GB1265318A (ja) 1968-05-14 1968-05-14

Country Status (7)

Country Link
AT (1) AT294945B (ja)
CA (1) CA923798A (ja)
DE (1) DE1924486A1 (ja)
FR (1) FR2008498A1 (ja)
GB (1) GB1265318A (ja)
NL (1) NL6907365A (ja)
SE (1) SE357109B (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1039557A1 (en) * 1997-10-24 2000-09-27 Sumitomo Special Metals Company Limited Silicon based conductive material and process for production thereof
WO2019137953A3 (de) * 2018-01-12 2019-11-28 Leibniz-Institut Für Festkörper- Und Werkstoffforschung Dresden E.V. Thermoelektrisches material und verfahren zur herstellung eines thermoelektrischen materials

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4129871C2 (de) * 1991-09-07 1995-10-19 Webasto Ag Fahrzeugtechnik Verfahren zur Herstellung von GeSi-Thermoelementen

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1039557A1 (en) * 1997-10-24 2000-09-27 Sumitomo Special Metals Company Limited Silicon based conductive material and process for production thereof
EP1039557A4 (en) * 1997-10-24 2007-02-21 Neomax Co Ltd SILICON-CONDUCTIVE MATERIAL AND METHOD FOR MANUFACTURING THE SAME
WO2019137953A3 (de) * 2018-01-12 2019-11-28 Leibniz-Institut Für Festkörper- Und Werkstoffforschung Dresden E.V. Thermoelektrisches material und verfahren zur herstellung eines thermoelektrischen materials

Also Published As

Publication number Publication date
DE1924486A1 (de) 1969-11-27
CA923798A (en) 1973-04-03
SE357109B (ja) 1973-06-12
AT294945B (de) 1971-12-10
FR2008498A1 (ja) 1970-01-23
NL6907365A (ja) 1969-11-18

Similar Documents

Publication Publication Date Title
Lin et al. Thermally insulative thermoelectric argyrodites
CN106449957B (zh) 一种碲化铋基p型热电材料及其制备方法
Benz et al. GaSb and InSb crystals grown by vertical and horizontal travelling heater method
CN102637817A (zh) 一种碲化铋基块体热电材料的制备方法
CN102191541B (zh) 磷硅镉多晶料的双温区合成方法及装置
GB1265318A (ja)
CN103526290A (zh) 多晶硅铸锭的制备方法
Lenoir et al. Growth of Bi1− xSbx alloys by the traveling heater method
Simpson et al. Activation energies for normal grain growth in lead and cadmium base alloy
Hobbs The effect of time on the physical properties of deposited snow
Ohachi et al. Growth of new spinel compounds CuInSnS4 and CuIn11S17
US3898080A (en) Germanium-silicon Thermoelectric elements
Aleksandrov Formation of semiconductor epitaxial films by pulse heating crystallization or regrowth
Sinke et al. Explosive crystallization of amorphous silicon: Triggering and propagation
Triboulet CdTe and CdZnTe growth
GB967933A (en) Improvements in or relating to methods of preparing crystalline silicon carbide
Esin et al. A generalized criterion for the transition from the layer to the continuous mechanism of crystal growth
Xue-Lei et al. A New Model for Microstructure of Liquid Metals
Coelho et al. Effect of heat treatment on Fe-B-Si-Nb alloy powder prepared by mechanical alloying
Miller et al. Single crystals of metal solid solutions: A study
Yildiz A combined experimental and modeling study for the growth of SixGe₁-x single crystals by liquid phase diffusion (LPD)
Cruceanu et al. On the thermoelectric properties of Cd x Hg 1− x Se alloys
Avignon Shape stability of a two-dimensional nucleus
Glaser et al. Kinetics of Explosive Crystallization Phenomena in Amorphous Silicon and Crystal Structure of the Layers Formed
Bednarski Preparation of very large bismuth single crystals for neutron filters

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee