GB1264032A - Improvements in or relating to semiconductor devices - Google Patents
Improvements in or relating to semiconductor devicesInfo
- Publication number
- GB1264032A GB1264032A GB1767269A GB1767269A GB1264032A GB 1264032 A GB1264032 A GB 1264032A GB 1767269 A GB1767269 A GB 1767269A GB 1767269 A GB1767269 A GB 1767269A GB 1264032 A GB1264032 A GB 1264032A
- Authority
- GB
- United Kingdom
- Prior art keywords
- emitter
- apertures
- electrode
- contact
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052782 aluminium Inorganic materials 0.000 abstract 3
- 239000000463 material Substances 0.000 abstract 3
- 229910052751 metal Inorganic materials 0.000 abstract 3
- 239000002184 metal Substances 0.000 abstract 3
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 239000004411 aluminium Substances 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 abstract 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 238000010276 construction Methods 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 230000017525 heat dissipation Effects 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 229910052697 platinum Inorganic materials 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
- 229910052719 titanium Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2226268A JPS5025306B1 (sr) | 1968-04-04 | 1968-04-04 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1264032A true GB1264032A (en) | 1972-02-16 |
Family
ID=12077840
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1767269A Expired GB1264032A (en) | 1968-04-04 | 1969-04-03 | Improvements in or relating to semiconductor devices |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS5025306B1 (sr) |
| DE (1) | DE1912931C3 (sr) |
| FR (1) | FR2005564B1 (sr) |
| GB (1) | GB1264032A (sr) |
| NL (1) | NL144436B (sr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0170268A2 (en) * | 1984-07-30 | 1986-02-05 | Nec Corporation | Complementary MOS integrated circuit having means for preventing latch-up phenomenon |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2339956A1 (fr) * | 1976-01-30 | 1977-08-26 | Thomson Csf | Procede de realisation de contacts " metal-semiconducteur " a grande densite d'injection, et dispositifs obtenus par ledit procede |
| US4231059A (en) * | 1978-11-01 | 1980-10-28 | Westinghouse Electric Corp. | Technique for controlling emitter ballast resistance |
| JPS56162864A (en) * | 1980-05-19 | 1981-12-15 | Hitachi Ltd | Semiconductor device |
| FR3111031B1 (fr) | 2020-05-26 | 2022-10-14 | Univ De Chambery Univ Savoie Mont Blanc | Système et procédé de surveillance d’installations d’énergie solaire |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL296170A (sr) * | 1962-10-04 | |||
| FR1546423A (fr) * | 1966-12-09 | 1968-11-15 | Kobe Ind Corp | Dispositif à semi-conducteur |
-
1968
- 1968-04-04 JP JP2226268A patent/JPS5025306B1/ja active Pending
-
1969
- 1969-03-14 DE DE19691912931 patent/DE1912931C3/de not_active Expired
- 1969-04-03 NL NL6905257A patent/NL144436B/xx not_active IP Right Cessation
- 1969-04-03 GB GB1767269A patent/GB1264032A/en not_active Expired
- 1969-04-04 FR FR6910473A patent/FR2005564B1/fr not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0170268A2 (en) * | 1984-07-30 | 1986-02-05 | Nec Corporation | Complementary MOS integrated circuit having means for preventing latch-up phenomenon |
| EP0170268A3 (en) * | 1984-07-30 | 1987-09-02 | Nec Corporation | Complementary mos integrated circuit having means for preventing latch-up phenomenon |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2005564B1 (sr) | 1974-07-12 |
| FR2005564A1 (sr) | 1969-12-12 |
| JPS5025306B1 (sr) | 1975-08-22 |
| DE1912931B2 (de) | 1976-09-09 |
| NL6905257A (sr) | 1969-10-07 |
| NL144436B (nl) | 1974-12-16 |
| DE1912931C3 (de) | 1981-11-26 |
| DE1912931A1 (de) | 1969-11-13 |
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