GB1259883A - Encapsulated beam lead construction for semiconductor device and assembly and method - Google Patents
Encapsulated beam lead construction for semiconductor device and assembly and methodInfo
- Publication number
- GB1259883A GB1259883A GB37426/69A GB3742669A GB1259883A GB 1259883 A GB1259883 A GB 1259883A GB 37426/69 A GB37426/69 A GB 37426/69A GB 3742669 A GB3742669 A GB 3742669A GB 1259883 A GB1259883 A GB 1259883A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- silicon
- semi
- circuit elements
- conductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 238000000034 method Methods 0.000 title abstract 3
- 238000010276 construction Methods 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 3
- 239000000463 material Substances 0.000 abstract 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 3
- 239000003989 dielectric material Substances 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- 238000002955 isolation Methods 0.000 abstract 2
- 229910052697 platinum Inorganic materials 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract 1
- 230000000712 assembly Effects 0.000 abstract 1
- 238000000429 assembly Methods 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000011810 insulating material Substances 0.000 abstract 1
- 229910021339 platinum silicide Inorganic materials 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- 239000010936 titanium Substances 0.000 abstract 1
- 229910052719 titanium Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Element Separation (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US74807068A | 1968-07-26 | 1968-07-26 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1259883A true GB1259883A (en) | 1972-01-12 |
Family
ID=25007867
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB37426/69A Expired GB1259883A (en) | 1968-07-26 | 1969-07-25 | Encapsulated beam lead construction for semiconductor device and assembly and method |
Country Status (4)
| Country | Link |
|---|---|
| DE (1) | DE1937755A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2014743A1 (enrdf_load_stackoverflow) |
| GB (1) | GB1259883A (enrdf_load_stackoverflow) |
| NL (1) | NL6911479A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111599703A (zh) * | 2020-05-09 | 2020-08-28 | 中国电子科技集团公司第十三研究所 | SiC衬底上GaN器件或电路的梁式引线制备方法 |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5120267B2 (enrdf_load_stackoverflow) * | 1972-05-13 | 1976-06-23 | ||
| NL7215200A (enrdf_load_stackoverflow) * | 1972-11-10 | 1974-05-14 | ||
| US4257061A (en) * | 1977-10-17 | 1981-03-17 | John Fluke Mfg. Co., Inc. | Thermally isolated monolithic semiconductor die |
-
1969
- 1969-07-25 NL NL6911479A patent/NL6911479A/xx unknown
- 1969-07-25 GB GB37426/69A patent/GB1259883A/en not_active Expired
- 1969-07-25 FR FR6925619A patent/FR2014743A1/fr not_active Withdrawn
- 1969-07-25 DE DE19691937755 patent/DE1937755A1/de active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111599703A (zh) * | 2020-05-09 | 2020-08-28 | 中国电子科技集团公司第十三研究所 | SiC衬底上GaN器件或电路的梁式引线制备方法 |
| CN111599703B (zh) * | 2020-05-09 | 2021-09-03 | 中国电子科技集团公司第十三研究所 | SiC衬底上GaN器件或电路的梁式引线制备方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1937755A1 (de) | 1970-02-12 |
| FR2014743A1 (enrdf_load_stackoverflow) | 1970-04-17 |
| NL6911479A (enrdf_load_stackoverflow) | 1970-01-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3970486A (en) | Methods of producing a semiconductor device and a semiconductor device produced by said method | |
| US5194395A (en) | Method of producing a substrate having semiconductor-on-insulator structure with gettering sites | |
| GB1083273A (en) | Semiconductor integrated circuits and method of making the same | |
| EP0352801B1 (en) | Production method of a semiconductor-on-insulator structure with gettering sites | |
| GB1363223A (en) | Method for manufacturing a semiconductor integrated circuit isolated through dielectric material | |
| GB1219986A (en) | Improvements in or relating to the production of semiconductor bodies | |
| JPS6159853A (ja) | シリコン結晶体構造 | |
| US4131909A (en) | Semiconductor integrated circuit isolated through dielectric material and a method for manufacturing the same | |
| GB1206308A (en) | Method of making semiconductor wafer | |
| US3979237A (en) | Device isolation in integrated circuits | |
| US3986200A (en) | Semiconductor structure and method | |
| GB1520925A (en) | Semiconductor device manufacture | |
| GB1332931A (en) | Methods of manufacturing a semiconductor device | |
| US4751561A (en) | Dielectrically isolated PMOS, NMOS, PNP and NPN transistors on a silicon wafer | |
| GB1400313A (en) | Method of producing semiconductor device | |
| GB1259883A (en) | Encapsulated beam lead construction for semiconductor device and assembly and method | |
| US3683491A (en) | Method for fabricating pinched resistor semiconductor structure | |
| JPH02285642A (ja) | 誘電体分離半導体デバイス及びその製造方法 | |
| US5034342A (en) | Method of forming semiconductor stalk structure by epitaxial growth in trench | |
| GB1152156A (en) | Semiconductor Devices | |
| GB1285917A (en) | Semiconductor device fabrication | |
| GB1279588A (en) | Improvements in or relating to the production of insulated semi-conductor regions in a composite body | |
| GB1268335A (en) | Semiconductor device | |
| US3918079A (en) | Encapsulated beam lead construction for semiconductor device and assembly and method | |
| GB1250248A (enrdf_load_stackoverflow) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |