GB1258572A - - Google Patents
Info
- Publication number
- GB1258572A GB1258572A GB1127468A GB1258572DA GB1258572A GB 1258572 A GB1258572 A GB 1258572A GB 1127468 A GB1127468 A GB 1127468A GB 1258572D A GB1258572D A GB 1258572DA GB 1258572 A GB1258572 A GB 1258572A
- Authority
- GB
- United Kingdom
- Prior art keywords
- photo
- diode
- conductor
- diodes
- deposited
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004020 conductor Substances 0.000 abstract 9
- 230000001419 dependent effect Effects 0.000 abstract 3
- 229910052751 metal Inorganic materials 0.000 abstract 3
- 239000002184 metal Substances 0.000 abstract 3
- 238000005070 sampling Methods 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910000673 Indium arsenide Inorganic materials 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 238000005513 bias potential Methods 0.000 abstract 1
- 239000003990 capacitor Substances 0.000 abstract 1
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 abstract 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1127468 | 1968-03-07 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1258572A true GB1258572A (enrdf_load_stackoverflow) | 1971-12-30 |
Family
ID=9983202
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1127468A Expired GB1258572A (enrdf_load_stackoverflow) | 1968-03-07 | 1968-03-07 |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB1258572A (enrdf_load_stackoverflow) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0021910A1 (fr) * | 1979-06-27 | 1981-01-07 | Thomson-Csf | Mosaique de détecteurs de rayonnement lue par un dispositif semiconducteur, et système de prise de vues comportant une telle mosaique |
| FR2575602A1 (fr) * | 1984-12-27 | 1986-07-04 | Thomson Csf | Dispositif photosensible de grand format, et procede d'utilisation |
| US4797560A (en) * | 1986-01-20 | 1989-01-10 | Thomson-Csf | Matrix of photosensitive elements and an associated reading method in image formation |
| US4797546A (en) * | 1986-01-17 | 1989-01-10 | Thomson-Csf | Method for reading a light-sensitive element constituted by a photodiode and a capacitor |
-
1968
- 1968-03-07 GB GB1127468A patent/GB1258572A/en not_active Expired
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0021910A1 (fr) * | 1979-06-27 | 1981-01-07 | Thomson-Csf | Mosaique de détecteurs de rayonnement lue par un dispositif semiconducteur, et système de prise de vues comportant une telle mosaique |
| FR2460079A1 (fr) * | 1979-06-27 | 1981-01-16 | Thomson Csf | Mosaique de detecteurs de rayonnement lue par un dispositif semi-conducteur, et systeme de prise de vues comportant une telle mosaique |
| US4311906A (en) | 1979-06-27 | 1982-01-19 | Thomson-Csf | Mosaic of radiation detectors read by a semiconductor device and a picture pickup system comprising a mosaic of this type |
| FR2575602A1 (fr) * | 1984-12-27 | 1986-07-04 | Thomson Csf | Dispositif photosensible de grand format, et procede d'utilisation |
| EP0189710A1 (fr) * | 1984-12-27 | 1986-08-06 | Thomson-Csf | Dispositif photosensible de grand format, et procédé d'utilisation |
| US4799094A (en) * | 1984-12-27 | 1989-01-17 | Thomson-Csf | Large-format photosensitive device and a method of utilization |
| US4797546A (en) * | 1986-01-17 | 1989-01-10 | Thomson-Csf | Method for reading a light-sensitive element constituted by a photodiode and a capacitor |
| US4797560A (en) * | 1986-01-20 | 1989-01-10 | Thomson-Csf | Matrix of photosensitive elements and an associated reading method in image formation |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |