GB1258259A - - Google Patents
Info
- Publication number
- GB1258259A GB1258259A GB1258259DA GB1258259A GB 1258259 A GB1258259 A GB 1258259A GB 1258259D A GB1258259D A GB 1258259DA GB 1258259 A GB1258259 A GB 1258259A
- Authority
- GB
- United Kingdom
- Prior art keywords
- film
- ions
- produce
- layer
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 150000002500 ions Chemical class 0.000 abstract 5
- 239000010410 layer Substances 0.000 abstract 4
- 150000001875 compounds Chemical class 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 239000003990 capacitor Substances 0.000 abstract 2
- 239000011521 glass Substances 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 229910052751 metal Inorganic materials 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 230000000712 assembly Effects 0.000 abstract 1
- 238000000429 assembly Methods 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 230000003993 interaction Effects 0.000 abstract 1
- 238000010884 ion-beam technique Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 150000004767 nitrides Chemical class 0.000 abstract 1
- 238000009738 saturating Methods 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
- 229910052715 tantalum Inorganic materials 0.000 abstract 1
- 229910052718 tin Inorganic materials 0.000 abstract 1
- 229910052719 titanium Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3215—Doping the layers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1663868 | 1968-04-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1258259A true GB1258259A (enrdf_load_stackoverflow) | 1971-12-30 |
Family
ID=10080923
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1258259D Expired GB1258259A (enrdf_load_stackoverflow) | 1968-04-05 | 1968-04-05 |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB1258259A (enrdf_load_stackoverflow) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4333808A (en) * | 1979-10-30 | 1982-06-08 | International Business Machines Corporation | Method for manufacture of ultra-thin film capacitor |
| US4351695A (en) * | 1980-01-30 | 1982-09-28 | Siemens Aktiengesellschaft | Method of producing low-resistant, monocrystalline metallic layers by implanting ions into a polycrystalline metal layer and heating to produce a monocrystalline layer |
| US4364969A (en) * | 1979-12-13 | 1982-12-21 | United Kingdom Atomic Energy Authority | Method of coating titanium and its alloys |
| GB2175316A (en) * | 1985-05-17 | 1986-11-26 | Atomic Energy Authority Uk | Improved cutting edges |
| GB2244284A (en) * | 1990-05-02 | 1991-11-27 | Nippon Sheet Glass Co Ltd | A method of manufacturing a polycrystalline semiconductor film by ion implantation |
-
1968
- 1968-04-05 GB GB1258259D patent/GB1258259A/en not_active Expired
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4333808A (en) * | 1979-10-30 | 1982-06-08 | International Business Machines Corporation | Method for manufacture of ultra-thin film capacitor |
| US4364969A (en) * | 1979-12-13 | 1982-12-21 | United Kingdom Atomic Energy Authority | Method of coating titanium and its alloys |
| US4351695A (en) * | 1980-01-30 | 1982-09-28 | Siemens Aktiengesellschaft | Method of producing low-resistant, monocrystalline metallic layers by implanting ions into a polycrystalline metal layer and heating to produce a monocrystalline layer |
| GB2175316A (en) * | 1985-05-17 | 1986-11-26 | Atomic Energy Authority Uk | Improved cutting edges |
| GB2175316B (en) * | 1985-05-17 | 1989-04-26 | Atomic Energy Authority Uk | Improved cutting edges |
| GB2244284A (en) * | 1990-05-02 | 1991-11-27 | Nippon Sheet Glass Co Ltd | A method of manufacturing a polycrystalline semiconductor film by ion implantation |
| GB2244284B (en) * | 1990-05-02 | 1993-11-03 | Nippon Sheet Glass Co Ltd | A method of manufacturing a polycrystalline semiconductor film |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |