GB1251251A - - Google Patents
Info
- Publication number
- GB1251251A GB1251251A GB1251251DA GB1251251A GB 1251251 A GB1251251 A GB 1251251A GB 1251251D A GB1251251D A GB 1251251DA GB 1251251 A GB1251251 A GB 1251251A
- Authority
- GB
- United Kingdom
- Prior art keywords
- compound
- temperature portion
- melting point
- single crystal
- march
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
- C30B11/06—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt at least one but not all components of the crystal composition being added
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/971—Stoichiometric control of host substrate composition
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP43015116A JPS4820106B1 (xx) | 1968-03-08 | 1968-03-08 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1251251A true GB1251251A (xx) | 1971-10-27 |
Family
ID=11879844
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1251251D Expired GB1251251A (xx) | 1968-03-08 | 1969-03-06 |
Country Status (4)
Country | Link |
---|---|
US (1) | US3615203A (xx) |
JP (1) | JPS4820106B1 (xx) |
DE (1) | DE1911715B2 (xx) |
GB (1) | GB1251251A (xx) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4040894A (en) * | 1967-06-13 | 1977-08-09 | Huguette Fumeron Rodot | Process of preparing crystals of compounds and alloys |
US3899572A (en) * | 1969-12-13 | 1975-08-12 | Sony Corp | Process for producing phosphides |
US3947548A (en) * | 1970-10-01 | 1976-03-30 | Semiconductor Research Foundation | Process of growing single crystals of gallium phosphide |
JPS5148152B2 (xx) * | 1972-05-11 | 1976-12-18 | ||
US4190486A (en) * | 1973-10-04 | 1980-02-26 | Hughes Aircraft Company | Method for obtaining optically clear, high resistivity II-VI, III-V, and IV-VI compounds by heat treatment |
US4181515A (en) * | 1974-09-24 | 1980-01-01 | The Post Office | Method of making dielectric optical waveguides |
DE2510612C2 (de) * | 1975-03-11 | 1985-01-31 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur Herstellung von kompaktem, einphasigem Galliumphosphid stöchiometrischer Zusammensetzung |
JPS51113903U (xx) * | 1975-03-12 | 1976-09-16 | ||
US4083748A (en) * | 1975-10-30 | 1978-04-11 | Western Electric Company, Inc. | Method of forming and growing a single crystal of a semiconductor compound |
US4169727A (en) * | 1978-05-01 | 1979-10-02 | Morgan Semiconductor, Inc. | Alloy of silicon and gallium arsenide |
US4521272A (en) * | 1981-01-05 | 1985-06-04 | At&T Technologies, Inc. | Method for forming and growing a single crystal of a semiconductor compound |
US7819981B2 (en) * | 2004-10-26 | 2010-10-26 | Advanced Technology Materials, Inc. | Methods for cleaning ion implanter components |
US20100224264A1 (en) * | 2005-06-22 | 2010-09-09 | Advanced Technology Materials, Inc. | Apparatus and process for integrated gas blending |
CN103170447B (zh) | 2005-08-30 | 2015-02-18 | 先进科技材料公司 | 使用替代的氟化含硼前驱体的硼离子注入和用于注入的大氢化硼的形成 |
KR20110005683A (ko) | 2008-02-11 | 2011-01-18 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | 반도체 가공 시스템에서의 이온 공급원 세정법 |
US20110021011A1 (en) | 2009-07-23 | 2011-01-27 | Advanced Technology Materials, Inc. | Carbon materials for carbon implantation |
US8598022B2 (en) | 2009-10-27 | 2013-12-03 | Advanced Technology Materials, Inc. | Isotopically-enriched boron-containing compounds, and methods of making and using same |
TW201241249A (en) * | 2011-04-12 | 2012-10-16 | Dingten Ind Inc | Single crystal growth method for vertical high temperature and high pressure group III-V compound |
EP3267470A3 (en) | 2012-02-14 | 2018-04-18 | Entegris, Inc. | Carbon dopant gas and co-flow for implant beam and source life performance improvement |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1029803B (de) * | 1954-09-18 | 1958-05-14 | Siemens Ag | Verfahren zur Herstellung einer Verbindung oder einer Legierung in kristalliner Form durch Zusammen-schmelzen der Komponenten in einem abgeschlossenen System |
NL286890A (xx) * | 1962-03-29 |
-
1968
- 1968-03-08 JP JP43015116A patent/JPS4820106B1/ja active Pending
-
1969
- 1969-03-06 GB GB1251251D patent/GB1251251A/en not_active Expired
- 1969-03-07 DE DE1911715A patent/DE1911715B2/de not_active Ceased
- 1969-03-10 US US805626A patent/US3615203A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US3615203A (en) | 1971-10-26 |
JPS4820106B1 (xx) | 1973-06-19 |
DE1911715A1 (de) | 1969-10-09 |
DE1911715B2 (de) | 1976-01-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed [section 19, patents act 1949] | ||
PE20 | Patent expired after termination of 20 years |