GB1251251A - - Google Patents

Info

Publication number
GB1251251A
GB1251251A GB1251251DA GB1251251A GB 1251251 A GB1251251 A GB 1251251A GB 1251251D A GB1251251D A GB 1251251DA GB 1251251 A GB1251251 A GB 1251251A
Authority
GB
United Kingdom
Prior art keywords
compound
temperature portion
melting point
single crystal
march
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GB1251251A publication Critical patent/GB1251251A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/06—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt at least one but not all components of the crystal composition being added
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/971—Stoichiometric control of host substrate composition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
GB1251251D 1968-03-08 1969-03-06 Expired GB1251251A (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP43015116A JPS4820106B1 (xx) 1968-03-08 1968-03-08

Publications (1)

Publication Number Publication Date
GB1251251A true GB1251251A (xx) 1971-10-27

Family

ID=11879844

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1251251D Expired GB1251251A (xx) 1968-03-08 1969-03-06

Country Status (4)

Country Link
US (1) US3615203A (xx)
JP (1) JPS4820106B1 (xx)
DE (1) DE1911715B2 (xx)
GB (1) GB1251251A (xx)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4040894A (en) * 1967-06-13 1977-08-09 Huguette Fumeron Rodot Process of preparing crystals of compounds and alloys
US3899572A (en) * 1969-12-13 1975-08-12 Sony Corp Process for producing phosphides
US3947548A (en) * 1970-10-01 1976-03-30 Semiconductor Research Foundation Process of growing single crystals of gallium phosphide
JPS5148152B2 (xx) * 1972-05-11 1976-12-18
US4190486A (en) * 1973-10-04 1980-02-26 Hughes Aircraft Company Method for obtaining optically clear, high resistivity II-VI, III-V, and IV-VI compounds by heat treatment
US4181515A (en) * 1974-09-24 1980-01-01 The Post Office Method of making dielectric optical waveguides
DE2510612C2 (de) * 1975-03-11 1985-01-31 Siemens AG, 1000 Berlin und 8000 München Verfahren zur Herstellung von kompaktem, einphasigem Galliumphosphid stöchiometrischer Zusammensetzung
JPS51113903U (xx) * 1975-03-12 1976-09-16
US4083748A (en) * 1975-10-30 1978-04-11 Western Electric Company, Inc. Method of forming and growing a single crystal of a semiconductor compound
US4169727A (en) * 1978-05-01 1979-10-02 Morgan Semiconductor, Inc. Alloy of silicon and gallium arsenide
US4521272A (en) * 1981-01-05 1985-06-04 At&T Technologies, Inc. Method for forming and growing a single crystal of a semiconductor compound
US7819981B2 (en) * 2004-10-26 2010-10-26 Advanced Technology Materials, Inc. Methods for cleaning ion implanter components
KR101241922B1 (ko) * 2005-06-22 2013-03-11 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 통합 가스 배합 장치 및 방법
CN103170447B (zh) 2005-08-30 2015-02-18 先进科技材料公司 使用替代的氟化含硼前驱体的硼离子注入和用于注入的大氢化硼的形成
SG188150A1 (en) 2008-02-11 2013-03-28 Advanced Tech Materials Ion source cleaning in semiconductor processing systems
US20110021011A1 (en) 2009-07-23 2011-01-27 Advanced Technology Materials, Inc. Carbon materials for carbon implantation
US8598022B2 (en) 2009-10-27 2013-12-03 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
TW201241249A (en) * 2011-04-12 2012-10-16 Dingten Ind Inc Single crystal growth method for vertical high temperature and high pressure group III-V compound
CN104272433B (zh) 2012-02-14 2018-06-05 恩特格里斯公司 用于改善注入束和源寿命性能的碳掺杂剂气体和协流

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1029803B (de) * 1954-09-18 1958-05-14 Siemens Ag Verfahren zur Herstellung einer Verbindung oder einer Legierung in kristalliner Form durch Zusammen-schmelzen der Komponenten in einem abgeschlossenen System
NL286890A (xx) * 1962-03-29

Also Published As

Publication number Publication date
JPS4820106B1 (xx) 1973-06-19
DE1911715B2 (de) 1976-01-02
DE1911715A1 (de) 1969-10-09
US3615203A (en) 1971-10-26

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PE20 Patent expired after termination of 20 years