NL286890A - - Google Patents

Info

Publication number
NL286890A
NL286890A NL286890DA NL286890A NL 286890 A NL286890 A NL 286890A NL 286890D A NL286890D A NL 286890DA NL 286890 A NL286890 A NL 286890A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL286890A publication Critical patent/NL286890A/xx

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00Phosphorus; Compounds thereof
    • C01B25/06Hydrogen phosphides
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C1/00Making non-ferrous alloys
    • C22C1/007Preparing arsenides or antimonides, especially of the III-VI-compound type, e.g. aluminium or gallium arsenide
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/40AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/049Equivalence and options
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/065Gp III-V generic compounds-processing
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/072Heterojunctions
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/079Inert carrier gas

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Catalysts (AREA)
  • Luminescent Compositions (AREA)
NL286890D 1962-03-29 NL286890A (xx)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES78719A DE1191794B (de) 1962-03-29 1962-03-29 Verfahren zur Herstellung gereinigter Borphosphideinkristalle
DE1962S0082828 DE1265716C2 (de) 1962-03-29 1962-12-12 Verfahren zum Herstellen von AB-Verbindungen in kristalline Form

Publications (1)

Publication Number Publication Date
NL286890A true NL286890A (xx)

Family

ID=25996821

Family Applications (2)

Application Number Title Priority Date Filing Date
NL286890D NL286890A (xx) 1962-03-29
NL297600D NL297600A (xx) 1962-03-29

Family Applications After (1)

Application Number Title Priority Date Filing Date
NL297600D NL297600A (xx) 1962-03-29

Country Status (7)

Country Link
US (2) US3340009A (xx)
BE (2) BE641093A (xx)
CH (2) CH477365A (xx)
DE (2) DE1191794B (xx)
GB (2) GB1032604A (xx)
NL (2) NL297600A (xx)
SE (1) SE326163B (xx)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE630321A (xx) * 1962-03-29
JPS4820106B1 (xx) * 1968-03-08 1973-06-19
JPS557946B2 (xx) * 1972-04-19 1980-02-29
US4093704A (en) * 1974-01-16 1978-06-06 U.S. Philips Corporation Method for synthesis of III-V compounds
US4550014A (en) * 1982-09-09 1985-10-29 The United States Of America As Represented By The United States Department Of Energy Method for production of free-standing polycrystalline boron phosphide film
US4559217A (en) * 1983-11-01 1985-12-17 The United States Of America As Represented By The Secretary Of The Air Force Method for vacuum baking indium in-situ
US4783320A (en) * 1985-11-25 1988-11-08 The United States Of America As Represented By The Secretary Of The Air Force Rapid synthesis of indium phosphide
US4946543A (en) * 1986-06-02 1990-08-07 Kalisher Murray H Method and apparatus for growing films on a substrate
CN107868981B (zh) * 2016-09-28 2020-09-29 清华大学 一种金属铂的半金属化合物及其制备方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2862787A (en) * 1953-05-27 1958-12-02 Paul F Seguin Process and apparatus for the preparation of semi-conductors from arsenides and phosphides and detectors formed therefrom
DE1029803B (de) * 1954-09-18 1958-05-14 Siemens Ag Verfahren zur Herstellung einer Verbindung oder einer Legierung in kristalliner Form durch Zusammen-schmelzen der Komponenten in einem abgeschlossenen System
US2759861A (en) * 1954-09-22 1956-08-21 Bell Telephone Labor Inc Process of making photoconductive compounds
US2871100A (en) * 1955-07-22 1959-01-27 Rca Corp Method of preparing indium phosphide
US3021196A (en) * 1955-09-23 1962-02-13 Siemens Ag Method for producing multi-component substances comprising a component of high volatility
US2937075A (en) * 1956-06-08 1960-05-17 Rca Corp Method of preparing pure indium phosphide
US2921905A (en) * 1956-08-08 1960-01-19 Westinghouse Electric Corp Method of preparing material for semiconductor applications
US2966424A (en) * 1958-03-03 1960-12-27 Monsanto Chemicals Crystallization of boron phosphide
GB923860A (en) * 1958-12-11 1963-04-18 Monsanto Chemicals Crystalline boron phosphides and production thereof
US3019092A (en) * 1958-12-19 1962-01-30 Rca Corp Method for purifying materials
NL252911A (xx) * 1959-06-22
NL253175A (xx) * 1959-06-29
NL121550C (xx) * 1959-12-11
NL275516A (xx) * 1961-03-02
BE630321A (xx) * 1962-03-29

Also Published As

Publication number Publication date
US3269878A (en) 1966-08-30
DE1191794B (de) 1965-04-29
DE1265716B (de) 1968-04-11
BE641093A (xx) 1964-06-11
CH477365A (de) 1969-08-31
BE630321A (xx)
NL297600A (xx)
SE326163B (xx) 1970-07-20
GB1063084A (en) 1967-03-30
DE1265716C2 (de) 1968-11-14
GB1032604A (en) 1966-06-15
US3340009A (en) 1967-09-05
CH449590A (de) 1968-01-15

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