GB1243053A - Semiconductor devices - Google Patents
Semiconductor devicesInfo
- Publication number
- GB1243053A GB1243053A GB2791/68A GB279168A GB1243053A GB 1243053 A GB1243053 A GB 1243053A GB 2791/68 A GB2791/68 A GB 2791/68A GB 279168 A GB279168 A GB 279168A GB 1243053 A GB1243053 A GB 1243053A
- Authority
- GB
- United Kingdom
- Prior art keywords
- semi
- conductor
- type
- arsenide
- jan
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 6
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 abstract 2
- 239000000969 carrier Substances 0.000 abstract 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910000846 In alloy Inorganic materials 0.000 abstract 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 abstract 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 abstract 1
- 238000005275 alloying Methods 0.000 abstract 1
- 229910052793 cadmium Inorganic materials 0.000 abstract 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 230000005684 electric field Effects 0.000 abstract 1
- 238000000407 epitaxy Methods 0.000 abstract 1
- 230000001747 exhibiting effect Effects 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 229910052714 tellurium Inorganic materials 0.000 abstract 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052725 zinc Inorganic materials 0.000 abstract 1
- 239000011701 zinc Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N80/00—Bulk negative-resistance effect devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Light Receiving Elements (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB2791/68A GB1243053A (en) | 1968-01-18 | 1968-01-18 | Semiconductor devices |
NL6900503A NL6900503A (no) | 1968-01-18 | 1969-01-13 | |
DE19691902094 DE1902094A1 (de) | 1968-01-18 | 1969-01-16 | Halbleitervorrichtung |
JP44003148A JPS4914107B1 (no) | 1968-01-18 | 1969-01-17 | |
FR696900798A FR2000398B1 (no) | 1968-01-18 | 1969-01-17 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB2791/68A GB1243053A (en) | 1968-01-18 | 1968-01-18 | Semiconductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1243053A true GB1243053A (en) | 1971-08-18 |
Family
ID=9745976
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB2791/68A Expired GB1243053A (en) | 1968-01-18 | 1968-01-18 | Semiconductor devices |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS4914107B1 (no) |
DE (1) | DE1902094A1 (no) |
FR (1) | FR2000398B1 (no) |
GB (1) | GB1243053A (no) |
NL (1) | NL6900503A (no) |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1363745A (fr) * | 1962-07-19 | 1964-06-12 | Philips Nv | Dispositif à semi-conducteur et son procédé de fabrication |
-
1968
- 1968-01-18 GB GB2791/68A patent/GB1243053A/en not_active Expired
-
1969
- 1969-01-13 NL NL6900503A patent/NL6900503A/xx unknown
- 1969-01-16 DE DE19691902094 patent/DE1902094A1/de active Pending
- 1969-01-17 FR FR696900798A patent/FR2000398B1/fr not_active Expired
- 1969-01-17 JP JP44003148A patent/JPS4914107B1/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
NL6900503A (no) | 1969-07-22 |
JPS4914107B1 (no) | 1974-04-05 |
FR2000398A1 (no) | 1969-09-05 |
FR2000398B1 (no) | 1974-02-22 |
DE1902094A1 (de) | 1969-09-18 |
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