GB1240510A - Improved thyristor - Google Patents

Improved thyristor

Info

Publication number
GB1240510A
GB1240510A GB60982/68A GB6098268A GB1240510A GB 1240510 A GB1240510 A GB 1240510A GB 60982/68 A GB60982/68 A GB 60982/68A GB 6098268 A GB6098268 A GB 6098268A GB 1240510 A GB1240510 A GB 1240510A
Authority
GB
United Kingdom
Prior art keywords
ignition
emitter
base
base layer
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB60982/68A
Other languages
English (en)
Inventor
Carl Ingvar Boksjo
Karl-Erik Olsson
Erich Gustav Spicar
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ABB Norden Holding AB
Original Assignee
ASEA AB
Allmanna Svenska Elektriska AB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASEA AB, Allmanna Svenska Elektriska AB filed Critical ASEA AB
Publication of GB1240510A publication Critical patent/GB1240510A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/26—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
    • H10F30/263—Photothyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Thyristors (AREA)
GB60982/68A 1967-12-28 1968-12-23 Improved thyristor Expired GB1240510A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE17887/67A SE352779B (enrdf_load_stackoverflow) 1967-12-28 1967-12-28

Publications (1)

Publication Number Publication Date
GB1240510A true GB1240510A (en) 1971-07-28

Family

ID=20304079

Family Applications (1)

Application Number Title Priority Date Filing Date
GB60982/68A Expired GB1240510A (en) 1967-12-28 1968-12-23 Improved thyristor

Country Status (6)

Country Link
CH (1) CH486776A (enrdf_load_stackoverflow)
DE (1) DE1816009C3 (enrdf_load_stackoverflow)
FR (1) FR1599432A (enrdf_load_stackoverflow)
GB (1) GB1240510A (enrdf_load_stackoverflow)
NL (1) NL6818198A (enrdf_load_stackoverflow)
SE (1) SE352779B (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4060826A (en) * 1975-08-29 1977-11-29 Siemens Aktiengesellschaft Light activated thyristor capable of activation by intensity radiation
US4122480A (en) * 1975-11-05 1978-10-24 Licentia Patent-Verwaltungs-G.M.B.H. Light fired thyristor with faulty firing protection
CN101672887A (zh) * 2008-09-12 2010-03-17 上海宝冶建设有限公司 大功率晶闸管变流组件性能的预防检测方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2237086C3 (de) * 1972-07-28 1979-01-18 Semikron Gesellschaft Fuer Gleichrichterbau Und Elektronik Mbh, 8500 Nuernberg Steuerbares Halbleitergleichrichterbauelement
DE2537984C3 (de) * 1975-08-26 1981-07-16 Siemens AG, 1000 Berlin und 8000 München Thyristor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4060826A (en) * 1975-08-29 1977-11-29 Siemens Aktiengesellschaft Light activated thyristor capable of activation by intensity radiation
US4122480A (en) * 1975-11-05 1978-10-24 Licentia Patent-Verwaltungs-G.M.B.H. Light fired thyristor with faulty firing protection
CN101672887A (zh) * 2008-09-12 2010-03-17 上海宝冶建设有限公司 大功率晶闸管变流组件性能的预防检测方法

Also Published As

Publication number Publication date
SE352779B (enrdf_load_stackoverflow) 1973-01-08
NL6818198A (enrdf_load_stackoverflow) 1969-07-01
DE1816009A1 (de) 1969-12-04
DE1816009C3 (de) 1979-06-28
DE1816009B2 (de) 1976-01-08
CH486776A (de) 1970-02-28
FR1599432A (enrdf_load_stackoverflow) 1970-07-15

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