GB1238391A - - Google Patents
Info
- Publication number
- GB1238391A GB1238391A GB1238391DA GB1238391A GB 1238391 A GB1238391 A GB 1238391A GB 1238391D A GB1238391D A GB 1238391DA GB 1238391 A GB1238391 A GB 1238391A
- Authority
- GB
- United Kingdom
- Prior art keywords
- substrate
- silicon
- source
- iodine
- atmosphere
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
1,238,391. Epitaxial deposition of silicon. GENERAL ELECTRIC CO. 23 April, 1968 [8 May, 1967], No. 19196/68. Heading C1A. [Also in Division C7] Silicon is epitaxially deposited on a substrate which is silicon, or which has a similar crystal structure to silicon (e.g. Ge, GaAs), by: providing in an evacuable enclosure a source of Si closely spaced from the substrate (e.g. 0À1-10 mm. apart), heating the source to at least 800‹ C. but below 1170‹ C. and said substrate to above 1170‹ C. but at most 1400‹ C., and introducing an atmosphere of iodine vapour into the enclosure so as to cause Si to be transported by the iodine from the source to the substrate and to cause the Si to be epitaxially deposited on the substrate, the atmosphere of iodine vapour being at a pressure more than 5 mm. Hg but not above 100 mm. Hg. The temperature differential between source and substrate is preferably at least 100‹ C. Reference has been directed by the Comptroller to Specification 916,887.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US63691167A | 1967-05-08 | 1967-05-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1238391A true GB1238391A (en) | 1971-07-07 |
Family
ID=24553853
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1238391D Expired GB1238391A (en) | 1967-05-08 | 1968-04-23 |
Country Status (3)
| Country | Link |
|---|---|
| DE (1) | DE1769275C3 (en) |
| FR (1) | FR1565212A (en) |
| GB (1) | GB1238391A (en) |
-
1968
- 1968-04-23 GB GB1238391D patent/GB1238391A/en not_active Expired
- 1968-04-30 DE DE19681769275 patent/DE1769275C3/en not_active Expired
- 1968-05-08 FR FR1565212D patent/FR1565212A/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE1769275B2 (en) | 1978-06-08 |
| DE1769275A1 (en) | 1971-09-23 |
| DE1769275C3 (en) | 1979-02-01 |
| FR1565212A (en) | 1969-04-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| 746 | Register noted 'licences of right' (sect. 46/1977) | ||
| PCNP | Patent ceased through non-payment of renewal fee |