GB1234665A - - Google Patents

Info

Publication number
GB1234665A
GB1234665A GB1234665DA GB1234665A GB 1234665 A GB1234665 A GB 1234665A GB 1234665D A GB1234665D A GB 1234665DA GB 1234665 A GB1234665 A GB 1234665A
Authority
GB
United Kingdom
Prior art keywords
july
anodizing
wafer
silicon nitride
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GB1234665A publication Critical patent/GB1234665A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • C25D11/32—Anodisation of semiconducting materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6324—Formation by anodic treatments, e.g. anodic oxidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
GB1234665D 1967-05-07 1968-07-05 Expired GB1234665A (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1967S0110710 DE1644012B2 (de) 1967-05-07 1967-05-07 Verfahren zum eindiffundieren von dotierungsstoff aus der gasphase in eine lokal mit einer siliciumnitridschicht maskierte halbleiteroberflaeche

Publications (1)

Publication Number Publication Date
GB1234665A true GB1234665A (enExample) 1971-06-09

Family

ID=7530433

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1234665D Expired GB1234665A (enExample) 1967-05-07 1968-07-05

Country Status (7)

Country Link
AT (1) AT292786B (enExample)
CH (1) CH484700A (enExample)
DE (1) DE1644012B2 (enExample)
FR (1) FR1573470A (enExample)
GB (1) GB1234665A (enExample)
NL (1) NL6809330A (enExample)
SE (1) SE337361B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0006706A1 (en) * 1978-06-14 1980-01-09 Fujitsu Limited Process for producing a semiconductor device having an insulating layer of silicon dioxide covered by a film of silicon oxynitride
DE102015102454A1 (de) * 2015-02-20 2016-08-25 Osram Opto Semiconductors Gmbh Verfahren zur Strukturierung einer Nitridschicht, strukturierte Dielektrikumschicht, optoelektronisches Bauelement, Ätzverfahren zum Ätzen von Schichten und Umgebungssensor

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0154670B1 (en) * 1978-06-14 1991-05-08 Fujitsu Limited Process for producing a semiconductor device having insulating film
JPS5621372A (en) * 1979-07-31 1981-02-27 Fujitsu Ltd Manufacture of semiconductor device
FR2675824B1 (fr) * 1991-04-26 1994-02-04 Alice Izrael Procede de traitement de la surface gravee d'un corps semi conducteur ou semi-isolant, circuits integres obtenus selon un tel procede et appareil d'oxydation anodique pour mettre en óoeuvre un tel procede.

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0006706A1 (en) * 1978-06-14 1980-01-09 Fujitsu Limited Process for producing a semiconductor device having an insulating layer of silicon dioxide covered by a film of silicon oxynitride
DE102015102454A1 (de) * 2015-02-20 2016-08-25 Osram Opto Semiconductors Gmbh Verfahren zur Strukturierung einer Nitridschicht, strukturierte Dielektrikumschicht, optoelektronisches Bauelement, Ätzverfahren zum Ätzen von Schichten und Umgebungssensor
US10566210B2 (en) 2015-02-20 2020-02-18 Osram Opto Semiconductors Gmbh Method for structuring a nitride layer, structured dielectric layer, optoelectronic component, etching method for etching layers, and an environment sensor
US10872783B2 (en) 2015-02-20 2020-12-22 Osram Oled Gmbh Method for structuring a nitride layer, structured dielectric layer, optoelectronic component, etching method for etching layers, and an environment sensor

Also Published As

Publication number Publication date
AT292786B (de) 1971-08-15
NL6809330A (enExample) 1969-01-09
FR1573470A (enExample) 1969-07-04
CH484700A (de) 1970-01-31
SE337361B (enExample) 1971-08-09
DE1644012B2 (de) 1976-08-12
DE1644012A1 (de) 1970-09-24

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee