GB1061243A - Semiconductor devices - Google Patents

Semiconductor devices

Info

Publication number
GB1061243A
GB1061243A GB30695/65A GB3069565A GB1061243A GB 1061243 A GB1061243 A GB 1061243A GB 30695/65 A GB30695/65 A GB 30695/65A GB 3069565 A GB3069565 A GB 3069565A GB 1061243 A GB1061243 A GB 1061243A
Authority
GB
United Kingdom
Prior art keywords
layer
junction
alizarin
produced
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB30695/65A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Publication of GB1061243A publication Critical patent/GB1061243A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02258Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by anodic treatment, e.g. anodic oxidation

Abstract

1,061,243. Semi-conductor devices. SIEMENS-SCHUCKERTWERKE A.G. July 19, 1965 [Aug. 19, 1964], No. 30695/65. Heading H1K. A semi-conductor device comprises a monocrystalline semi-conductor body having a PN junction which emerges at the surface of the body, the surface of the body being covered with an oxygen containing layer and a silicone layer containing alizarin in the region of the emergent PN junction. A molybdenum plate 3 has fixed thereto an A1 electrode 4 to which is soldered a weakly P-Si body 2, the upper face of which has an Sb-Au electrode 5 alloyed thereto giving an Si-Au eutectic. A strong P-zone 6 is produced by recrystallization whilst an N zone 7 is provided giving a PN junction 9. An oxygen-containing surface layer 12 is produced by treatment with HNO 3 + HF vapour or by anodic oxidation in aqueous HF. A silicone lacquer 13 containing alizarin is applied to the surface to cover the PN junction at the surface whilst the rest of Si body has a dried oxygen-containing layer 12a and an alizarin-free silicone lacquer 14. The alizarin layer 12 is said to stabilize the absorption of positive ions in the surface layer 12, and produces an inversion layer 15. The surface of the body 2 may be electrolytically treated with aqueous boric acid prior to the application of the layers. The " dried " layer 12a is produced after application of layer 13 but before application of layer 14 by heating the device.
GB30695/65A 1964-08-19 1965-07-19 Semiconductor devices Expired GB1061243A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0092709 1964-08-19

Publications (1)

Publication Number Publication Date
GB1061243A true GB1061243A (en) 1967-03-08

Family

ID=7517403

Family Applications (1)

Application Number Title Priority Date Filing Date
GB30695/65A Expired GB1061243A (en) 1964-08-19 1965-07-19 Semiconductor devices

Country Status (4)

Country Link
BE (1) BE668270A (en)
CH (1) CH424997A (en)
GB (1) GB1061243A (en)
NL (1) NL6510805A (en)

Also Published As

Publication number Publication date
BE668270A (en) 1966-02-14
NL6510805A (en) 1966-02-21
CH424997A (en) 1966-11-30

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