GB1061243A - Semiconductor devices - Google Patents
Semiconductor devicesInfo
- Publication number
- GB1061243A GB1061243A GB30695/65A GB3069565A GB1061243A GB 1061243 A GB1061243 A GB 1061243A GB 30695/65 A GB30695/65 A GB 30695/65A GB 3069565 A GB3069565 A GB 3069565A GB 1061243 A GB1061243 A GB 1061243A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- junction
- alizarin
- produced
- semi
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02258—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by anodic treatment, e.g. anodic oxidation
Abstract
1,061,243. Semi-conductor devices. SIEMENS-SCHUCKERTWERKE A.G. July 19, 1965 [Aug. 19, 1964], No. 30695/65. Heading H1K. A semi-conductor device comprises a monocrystalline semi-conductor body having a PN junction which emerges at the surface of the body, the surface of the body being covered with an oxygen containing layer and a silicone layer containing alizarin in the region of the emergent PN junction. A molybdenum plate 3 has fixed thereto an A1 electrode 4 to which is soldered a weakly P-Si body 2, the upper face of which has an Sb-Au electrode 5 alloyed thereto giving an Si-Au eutectic. A strong P-zone 6 is produced by recrystallization whilst an N zone 7 is provided giving a PN junction 9. An oxygen-containing surface layer 12 is produced by treatment with HNO 3 + HF vapour or by anodic oxidation in aqueous HF. A silicone lacquer 13 containing alizarin is applied to the surface to cover the PN junction at the surface whilst the rest of Si body has a dried oxygen-containing layer 12a and an alizarin-free silicone lacquer 14. The alizarin layer 12 is said to stabilize the absorption of positive ions in the surface layer 12, and produces an inversion layer 15. The surface of the body 2 may be electrolytically treated with aqueous boric acid prior to the application of the layers. The " dried " layer 12a is produced after application of layer 13 but before application of layer 14 by heating the device.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES0092709 | 1964-08-19 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1061243A true GB1061243A (en) | 1967-03-08 |
Family
ID=7517403
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB30695/65A Expired GB1061243A (en) | 1964-08-19 | 1965-07-19 | Semiconductor devices |
Country Status (4)
Country | Link |
---|---|
BE (1) | BE668270A (en) |
CH (1) | CH424997A (en) |
GB (1) | GB1061243A (en) |
NL (1) | NL6510805A (en) |
-
1965
- 1965-07-19 GB GB30695/65A patent/GB1061243A/en not_active Expired
- 1965-07-30 CH CH1073265A patent/CH424997A/en unknown
- 1965-08-13 BE BE668270D patent/BE668270A/xx unknown
- 1965-08-18 NL NL6510805A patent/NL6510805A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
BE668270A (en) | 1966-02-14 |
NL6510805A (en) | 1966-02-21 |
CH424997A (en) | 1966-11-30 |
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