GB1233721A - - Google Patents
Info
- Publication number
- GB1233721A GB1233721A GB1233721DA GB1233721A GB 1233721 A GB1233721 A GB 1233721A GB 1233721D A GB1233721D A GB 1233721DA GB 1233721 A GB1233721 A GB 1233721A
- Authority
- GB
- United Kingdom
- Prior art keywords
- semi
- gaas
- electrons
- conductor
- electropositive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000463 material Substances 0.000 abstract 6
- 239000004065 semiconductor Substances 0.000 abstract 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- 229910052790 beryllium Inorganic materials 0.000 abstract 1
- 229910052793 cadmium Inorganic materials 0.000 abstract 1
- 229910052792 caesium Inorganic materials 0.000 abstract 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 abstract 1
- 239000012159 carrier gas Substances 0.000 abstract 1
- 239000010406 cathode material Substances 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000012544 monitoring process Methods 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
- 229910052725 zinc Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/32—Secondary-electron-emitting electrodes
Landscapes
- Cold Cathode And The Manufacture (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB2226568 | 1968-05-10 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1233721A true GB1233721A (enrdf_load_stackoverflow) | 1971-05-26 |
Family
ID=10176575
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1233721D Expired GB1233721A (enrdf_load_stackoverflow) | 1968-05-10 | 1968-05-10 |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB1233721A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2170648A (en) * | 1985-02-01 | 1986-08-06 | Raytheon Co | Secondary emission cathode |
-
1968
- 1968-05-10 GB GB1233721D patent/GB1233721A/en not_active Expired
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2170648A (en) * | 1985-02-01 | 1986-08-06 | Raytheon Co | Secondary emission cathode |
| US4677342A (en) * | 1985-02-01 | 1987-06-30 | Raytheon Company | Semiconductor secondary emission cathode and tube |
| GB2170648B (en) * | 1985-02-01 | 1989-07-26 | Raytheon Co | Crossed-field tube |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3478213A (en) | Photomultiplier or image amplifier with secondary emission transmission type dynodes made of semiconductive material with low work function material disposed thereon | |
| Haneman | Photoelectric emission and work functions of InSb, GaAs, Bi2Te3 and germanium | |
| US4616248A (en) | UV photocathode using negative electron affinity effect in Alx Ga1 N | |
| US3581151A (en) | Cold cathode structure comprising semiconductor whisker elements | |
| US3672992A (en) | Method of forming group iii-v compound photoemitters having a high quantum efficiency and long wavelength response | |
| GB830086A (en) | Improvements in or relating to electron sources and to apparatus utilizing them | |
| GB1536412A (en) | Photocathodes | |
| US3699404A (en) | Negative effective electron affinity emitters with drift fields using deep acceptor doping | |
| GB1086228A (en) | Improvements in or relating to electric discharge devices comprising a photocathode | |
| Garbe | CsF, Cs as a low work function layer on the GaAs photocathode | |
| US3895429A (en) | Method of making a semiconductor device | |
| GB1233721A (enrdf_load_stackoverflow) | ||
| US4019082A (en) | Electron emitting device and method of making the same | |
| US2159774A (en) | Secondary electron emitter and method of making it | |
| GB1321005A (en) | Method for increasing the electron emissivity of a semiconductor electron emitter | |
| US3900865A (en) | Group III-V compound photoemitters having a high quantum efficiency and long wavelength response | |
| US3858955A (en) | Method of making a iii-v compound electron-emissive cathode | |
| US3769558A (en) | Surface inversion solar cell and method of forming same | |
| GB1275972A (en) | Negative effective electron affinity emitters with drift fields using deep acceptor doping | |
| GB1069536A (en) | Improvements in solid-state electron source | |
| US1835118A (en) | Alkali metal tube | |
| GB1207091A (en) | Method of manufacturing and electronic discharge tube including a photocathode | |
| US3457470A (en) | Radiation detectors having a semiconductor body | |
| GB1233725A (enrdf_load_stackoverflow) | ||
| US2586771A (en) | Process for making secondary emission electrodes |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |