GB1206299A - Transducer apparatus - Google Patents
Transducer apparatusInfo
- Publication number
- GB1206299A GB1206299A GB56397/67A GB5639767A GB1206299A GB 1206299 A GB1206299 A GB 1206299A GB 56397/67 A GB56397/67 A GB 56397/67A GB 5639767 A GB5639767 A GB 5639767A GB 1206299 A GB1206299 A GB 1206299A
- Authority
- GB
- United Kingdom
- Prior art keywords
- bar
- gate
- channel layer
- transistor
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 230000005669 field effect Effects 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 239000003989 dielectric material Substances 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R23/00—Transducers other than those covered by groups H04R9/00 - H04R21/00
- H04R23/006—Transducers other than those covered by groups H04R9/00 - H04R21/00 using solid state devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
- H03F3/16—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/34—DC amplifiers in which all stages are DC-coupled
- H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
- H03F3/345—DC amplifiers in which all stages are DC-coupled with semiconductor devices only with field-effect devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/34—DC amplifiers in which all stages are DC-coupled
- H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
- H03F3/347—DC amplifiers in which all stages are DC-coupled with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
- H10D30/798—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions being provided in or under the channel regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N39/00—Integrated devices, or assemblies of multiple devices, comprising at least one piezoelectric, electrostrictive or magnetostrictive element covered by groups H10N30/00 – H10N35/00
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R25/00—Deaf-aid sets, i.e. electro-acoustic or electro-mechanical hearing aids; Electric tinnitus maskers providing an auditory perception
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Signal Processing (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Pressure Sensors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US61099167A | 1967-01-23 | 1967-01-23 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1206299A true GB1206299A (en) | 1970-09-23 |
Family
ID=24447201
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB56397/67A Expired GB1206299A (en) | 1967-01-23 | 1967-12-12 | Transducer apparatus |
Country Status (4)
| Country | Link |
|---|---|
| DE (1) | DE1648750A1 (enrdf_load_stackoverflow) |
| FR (1) | FR1549052A (enrdf_load_stackoverflow) |
| GB (1) | GB1206299A (enrdf_load_stackoverflow) |
| NL (1) | NL6717288A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3740689A (en) * | 1970-11-30 | 1973-06-19 | Matsushita Electric Ind Co Ltd | Mechano-electrical transducer device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1592800A (en) * | 1977-12-30 | 1981-07-08 | Philips Electronic Associated | Linear amplifier |
-
1967
- 1967-12-12 GB GB56397/67A patent/GB1206299A/en not_active Expired
- 1967-12-19 NL NL6717288A patent/NL6717288A/xx not_active Application Discontinuation
- 1967-12-21 DE DE19671648750 patent/DE1648750A1/de active Pending
- 1967-12-26 FR FR1549052D patent/FR1549052A/fr not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3740689A (en) * | 1970-11-30 | 1973-06-19 | Matsushita Electric Ind Co Ltd | Mechano-electrical transducer device |
Also Published As
| Publication number | Publication date |
|---|---|
| NL6717288A (enrdf_load_stackoverflow) | 1968-07-24 |
| DE1648750A1 (de) | 1971-07-22 |
| FR1549052A (enrdf_load_stackoverflow) | 1968-12-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US2898477A (en) | Piezoelectric field effect semiconductor device | |
| US3440873A (en) | Miniature pressure transducer | |
| US3351786A (en) | Piezoelectric-semiconductor, electromechanical transducer | |
| GB1396198A (en) | Transistors | |
| GB1396673A (en) | Stabilizing fet devices | |
| GB1129200A (en) | High frequency field effect transistor | |
| GB1155578A (en) | Field Effect Transistor | |
| GB1317815A (en) | Semiconductor strain sensor with controlled sensitivity | |
| GB1078798A (en) | Improvements in or relating to field effect transistor devices | |
| GB1044070A (en) | Field-effect transistors | |
| GB1206299A (en) | Transducer apparatus | |
| GB1476790A (en) | Semiconductor device including an insulated gate field effect transistor and method for its manufacture | |
| GB1149589A (en) | Thin film active element | |
| US3355935A (en) | Semiconductor systems for measuring streeses | |
| GB1471282A (en) | Field effect semiconductor devices | |
| GB1344399A (en) | Measuring the charge density of an insulating layer on a semi conductor substrate | |
| US3740689A (en) | Mechano-electrical transducer device | |
| SE314126B (enrdf_load_stackoverflow) | ||
| GB1489738A (en) | Magnetic flux sensors | |
| GB780251A (en) | Improvements in or relating to junction transistors | |
| GB1073347A (en) | Improvements in or relating to elasto-resistive elements | |
| GB1039416A (en) | Electronic signal translating circuits | |
| GB697164A (en) | Multi-electrode crystal device for producing electronic relay action | |
| GB1055418A (en) | Improvements in or relating to electro-mechanical transducers | |
| GB1049130A (en) | Improvements in pressure transducers and circuit arrangements therefor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |