GB1206299A - Transducer apparatus - Google Patents

Transducer apparatus

Info

Publication number
GB1206299A
GB1206299A GB56397/67A GB5639767A GB1206299A GB 1206299 A GB1206299 A GB 1206299A GB 56397/67 A GB56397/67 A GB 56397/67A GB 5639767 A GB5639767 A GB 5639767A GB 1206299 A GB1206299 A GB 1206299A
Authority
GB
United Kingdom
Prior art keywords
bar
gate
channel layer
transistor
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB56397/67A
Inventor
Max Eugene Broce
Derek Colman
Jack Pitts Mize
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of GB1206299A publication Critical patent/GB1206299A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R23/00—Transducers other than those covered by groups H04R9/00 - H04R21/00
    • H04R23/006—Transducers other than those covered by groups H04R9/00 - H04R21/00 using solid state devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
    • H01L29/7849—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being provided under the channel
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/16—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34—DC amplifiers in which all stages are DC-coupled
    • H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
    • H03F3/345—DC amplifiers in which all stages are DC-coupled with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34—DC amplifiers in which all stages are DC-coupled
    • H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
    • H03F3/347—DC amplifiers in which all stages are DC-coupled with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N39/00—Integrated devices, or assemblies of multiple devices, comprising at least one piezoelectric, electrostrictive or magnetostrictive element covered by groups H10N30/00 – H10N35/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R25/00—Deaf-aid sets, i.e. electro-acoustic or electro-mechanical hearing aids; Electric tinnitus maskers providing an auditory perception

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Pressure Sensors (AREA)

Abstract

1,206,299. Piezo-resistive elements. TEXAS INSTRUMENTS Inc. 12 Dec., 1967 [23 Jan., 1967], No. 56397/67. Heading H1K. [Also in Divisions H3 and H4] An electro-mechanical circuit element comprises an insulated gate field effect transistor whose channel layer conductance varies directly with the applied stress. The element, Fig. 1, comprises two heavily doped P-type areas 1 and 2 which are diffused into an N-type silicon substrate 3 and connected by a channel layer 4 a few Angstrom units thick. A thin insulating layer 5 of silicon oxide or silicon nitride placed over the surface forms the gate dielectric material. Metal electrodes 6, 7 and 8 are connected to the source, gate and drain respectively. Carrier mobility in such an element is very sensitive to imparted stress, especially as conduction takes place in the extremely thin channel layer, and a piezo-resistive effect results. The transistor may work in the depletion mode or enhancement mode, and can be used as a transducer in a mono or stereo pick-up, or in a microphone. In the latter application, Fig. 7, a silicon bar 43, rigidly attached at 46 to support 44 has such an element with source 47, gate 48 and drain 49 formed in it. A diaphragm 41 is attached to the free end of the bar so that when sound waves impinge upon it it deflects the bar to produce stresses in the transistor and thereby provide an electric signal which is fed to pre-amplifier. The amplifier circuit may be formed in the same bar as the element, Fig. 8, not shown, and comprises a number of field effect transistors of similar type to the transducer element.
GB56397/67A 1967-01-23 1967-12-12 Transducer apparatus Expired GB1206299A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US61099167A 1967-01-23 1967-01-23

Publications (1)

Publication Number Publication Date
GB1206299A true GB1206299A (en) 1970-09-23

Family

ID=24447201

Family Applications (1)

Application Number Title Priority Date Filing Date
GB56397/67A Expired GB1206299A (en) 1967-01-23 1967-12-12 Transducer apparatus

Country Status (4)

Country Link
DE (1) DE1648750A1 (en)
FR (1) FR1549052A (en)
GB (1) GB1206299A (en)
NL (1) NL6717288A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3740689A (en) * 1970-11-30 1973-06-19 Matsushita Electric Ind Co Ltd Mechano-electrical transducer device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1592800A (en) * 1977-12-30 1981-07-08 Philips Electronic Associated Linear amplifier

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3740689A (en) * 1970-11-30 1973-06-19 Matsushita Electric Ind Co Ltd Mechano-electrical transducer device

Also Published As

Publication number Publication date
DE1648750A1 (en) 1971-07-22
FR1549052A (en) 1968-12-06
NL6717288A (en) 1968-07-24

Similar Documents

Publication Publication Date Title
US2898477A (en) Piezoelectric field effect semiconductor device
US3440873A (en) Miniature pressure transducer
US3351786A (en) Piezoelectric-semiconductor, electromechanical transducer
GB1396673A (en) Stabilizing fet devices
GB1129200A (en) High frequency field effect transistor
US3582690A (en) Semiconductor strain sensor with controlled sensitivity
US3287506A (en) Semiconductor-based electro-acoustic transducer
GB1078798A (en) Improvements in or relating to field effect transistor devices
GB1044070A (en) Field-effect transistors
GB1060208A (en) Avalanche transistor
GB1206299A (en) Transducer apparatus
GB1476790A (en) Semiconductor device including an insulated gate field effect transistor and method for its manufacture
GB1149589A (en) Thin film active element
US3355935A (en) Semiconductor systems for measuring streeses
GB1471282A (en) Field effect semiconductor devices
US3740689A (en) Mechano-electrical transducer device
SE314126B (en)
GB1489738A (en) Magnetic flux sensors
GB1344399A (en) Measuring the charge density of an insulating layer on a semi conductor substrate
GB780251A (en) Improvements in or relating to junction transistors
GB1217880A (en) Lateral transistor with auxiliary control electrode
GB1073347A (en) Improvements in or relating to elasto-resistive elements
GB1039416A (en) Electronic signal translating circuits
GB697164A (en) Multi-electrode crystal device for producing electronic relay action
GB1055418A (en) Improvements in or relating to electro-mechanical transducers

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee