GB1205115A - Nuclear radiation detector and method for manufacturing same - Google Patents
Nuclear radiation detector and method for manufacturing sameInfo
- Publication number
- GB1205115A GB1205115A GB05407/68A GB1540768A GB1205115A GB 1205115 A GB1205115 A GB 1205115A GB 05407/68 A GB05407/68 A GB 05407/68A GB 1540768 A GB1540768 A GB 1540768A GB 1205115 A GB1205115 A GB 1205115A
- Authority
- GB
- United Kingdom
- Prior art keywords
- diamond
- electrodes
- electrode
- blocking
- vacuum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Measurement Of Radiation (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SU1144951 | 1967-03-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1205115A true GB1205115A (en) | 1970-09-16 |
Family
ID=20440385
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB05407/68A Expired GB1205115A (en) | 1967-03-29 | 1968-03-29 | Nuclear radiation detector and method for manufacturing same |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3665193A (cg-RX-API-DMAC7.html) |
| JP (1) | JPS5020468B1 (cg-RX-API-DMAC7.html) |
| BE (1) | BE712957A (cg-RX-API-DMAC7.html) |
| DE (1) | DE1764066B1 (cg-RX-API-DMAC7.html) |
| FR (1) | FR1601100A (cg-RX-API-DMAC7.html) |
| GB (1) | GB1205115A (cg-RX-API-DMAC7.html) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009032503A3 (en) * | 2007-08-31 | 2009-08-13 | Schlumberger Ca Ltd | Downhole tools with solid-state neutron monitors |
| CN116093178A (zh) * | 2023-01-10 | 2023-05-09 | 中山大学 | 一种无需滤波器的金刚石深紫外窄带光电探测器及方法 |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3858047A (en) * | 1968-09-27 | 1974-12-31 | S Kozlov | Device for measuring the rate of energy loss and for detecting ionizing nuclear radiations against gamma-radiation background |
| JPS5378677A (en) * | 1976-12-21 | 1978-07-12 | Fuji Electric Co Ltd | Apparatus for treating waste |
| JPS55104659A (en) * | 1979-02-05 | 1980-08-11 | Kouichi Nagata | Grinder |
| JPS56151656U (cg-RX-API-DMAC7.html) * | 1980-03-27 | 1981-11-13 | ||
| NL8006321A (nl) * | 1980-11-19 | 1982-06-16 | Eduard Anton Burgemeister | Werkwijze en inrichting voor het detecteren van ioniserende straling. |
| IL81537A (en) * | 1986-02-24 | 1991-05-12 | De Beers Ind Diamond | Method and synthetic diamond detector for detection of nuclear radiation |
| ZA874362B (en) * | 1986-06-20 | 1988-02-24 | De Beers Ind Diamond | Forming contacts on diamonds |
| JPS6385487A (ja) * | 1986-09-30 | 1988-04-15 | Toshiba Corp | 放射線検出器 |
| CA1289683C (en) * | 1987-10-27 | 1991-09-24 | De Beers Industrial Diamond Division (Proprietary) | Diamond radiation probe |
| GB8902443D0 (en) * | 1989-02-03 | 1989-03-22 | Jones Barbara L | Radiation detector |
| US5079425A (en) * | 1990-01-10 | 1992-01-07 | Sumitomo Electric Industries, Ltd. | Radiation detecting element |
| JPH05891A (ja) * | 1991-06-21 | 1993-01-08 | Canon Inc | ダイヤモンド−金属接合体 |
| AU2003205666A1 (en) | 2002-01-25 | 2003-09-02 | Gesellschaft Fur Schwerionenforschung Mbh | Detector for detecting particle beams and method for the production thereof |
| FR2875014B1 (fr) * | 2004-09-03 | 2006-12-01 | Commissariat Energie Atomique | Detection a base de diamant synthetique |
| JP7257312B2 (ja) * | 2019-11-21 | 2023-04-13 | 日立Geニュークリア・エナジー株式会社 | 放射線計測装置、放射線計測システム及び放射線計測方法 |
| CN114063140B (zh) * | 2021-11-16 | 2023-12-05 | 郑州工程技术学院 | 一种消除极化效应的金刚石中子探测器的制备方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL274771A (cg-RX-API-DMAC7.html) * | 1961-02-14 |
-
1968
- 1968-03-28 FR FR1601100D patent/FR1601100A/fr not_active Expired
- 1968-03-28 US US716953A patent/US3665193A/en not_active Expired - Lifetime
- 1968-03-28 DE DE19681764066 patent/DE1764066B1/de active Pending
- 1968-03-29 BE BE712957D patent/BE712957A/xx not_active IP Right Cessation
- 1968-03-29 GB GB05407/68A patent/GB1205115A/en not_active Expired
- 1968-03-29 JP JP43020736A patent/JPS5020468B1/ja active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009032503A3 (en) * | 2007-08-31 | 2009-08-13 | Schlumberger Ca Ltd | Downhole tools with solid-state neutron monitors |
| US8642944B2 (en) | 2007-08-31 | 2014-02-04 | Schlumberger Technology Corporation | Downhole tools with solid-state neutron monitors |
| CN116093178A (zh) * | 2023-01-10 | 2023-05-09 | 中山大学 | 一种无需滤波器的金刚石深紫外窄带光电探测器及方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5020468B1 (cg-RX-API-DMAC7.html) | 1975-07-15 |
| BE712957A (cg-RX-API-DMAC7.html) | 1968-09-30 |
| DE1764066B1 (de) | 1971-08-05 |
| US3665193A (en) | 1972-05-23 |
| FR1601100A (cg-RX-API-DMAC7.html) | 1970-08-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Sah et al. | Deactivation of the boron acceptor in silicon by hydrogen | |
| US3601668A (en) | Surface depletion layer photodevice | |
| US3936322A (en) | Method of making a double heterojunction diode laser | |
| US2691736A (en) | Electrical translation device, including semiconductor | |
| Gamo et al. | Selenium implantation in GaAs | |
| US3293084A (en) | Method of treating semiconductor bodies by ion bombardment | |
| US3654497A (en) | Semiconductor lasers utilizing internal saturable absorbers | |
| US4009058A (en) | Method of fabricating large area, high voltage PIN photodiode devices | |
| US3665193A (en) | Diamond nuclear radiation detector | |
| DE3531631C2 (cg-RX-API-DMAC7.html) | ||
| US3761711A (en) | Improved germanium gamma detectors having non-ideal contacts and deep level inducing impurities therein | |
| JPS5819125B2 (ja) | 半導体装置の製造方法 | |
| GB1259923A (en) | Method of treating semiconductor devices | |
| US3310443A (en) | Method of forming thin window drifted silicon charged particle detector | |
| US3462311A (en) | Semiconductor device having improved resistance to radiation damage | |
| Hunsperger et al. | The presence of deep levels in ion implanted junctions | |
| US3747016A (en) | Semiconductor injection laser | |
| Capasso et al. | Impact ionization rates for electrons and holes in Al0. 48In0. 52As | |
| EP0001139A1 (en) | Radiation-sensitive avalanche diode and method of manufacturing same | |
| Buchanan | Polarity dependence of hot‐electron‐induced trap creation in metal‐oxide‐semiconductor capacitors | |
| US3890178A (en) | Method of manufacturing a semiconductor device having a multi-thickness region | |
| US3736180A (en) | Method of producing solar cells | |
| GB1456437A (en) | Compound semiconductor layers | |
| US3915755A (en) | Method for doping an insulating layer | |
| US3666960A (en) | Reverse bias pulsing of junction diodes to reduce deterioration |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| 429A | Application made for amendment of specification (sect. 29/1949) | ||
| 429H | Application (made) for amendment of specification now open to opposition (sect. 29/1949) | ||
| 429D | Case decided by the comptroller ** specification amended (sect. 29/1949) | ||
| PE20 | Patent expired after termination of 20 years |