FR1601100A - - Google Patents

Info

Publication number
FR1601100A
FR1601100A FR1601100DA FR1601100A FR 1601100 A FR1601100 A FR 1601100A FR 1601100D A FR1601100D A FR 1601100DA FR 1601100 A FR1601100 A FR 1601100A
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Application granted granted Critical
Publication of FR1601100A publication Critical patent/FR1601100A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)
FR1601100D 1967-03-29 1968-03-28 Expired FR1601100A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SU1144951 1967-03-29

Publications (1)

Publication Number Publication Date
FR1601100A true FR1601100A (fr) 1970-08-10

Family

ID=20440385

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1601100D Expired FR1601100A (fr) 1967-03-29 1968-03-28

Country Status (6)

Country Link
US (1) US3665193A (fr)
JP (1) JPS5020468B1 (fr)
BE (1) BE712957A (fr)
DE (1) DE1764066B1 (fr)
FR (1) FR1601100A (fr)
GB (1) GB1205115A (fr)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3858047A (en) * 1968-09-27 1974-12-31 S Kozlov Device for measuring the rate of energy loss and for detecting ionizing nuclear radiations against gamma-radiation background
JPS5378677A (en) * 1976-12-21 1978-07-12 Fuji Electric Co Ltd Apparatus for treating waste
JPS55104659A (en) * 1979-02-05 1980-08-11 Kouichi Nagata Grinder
JPS56151656U (fr) * 1980-03-27 1981-11-13
NL8006321A (nl) * 1980-11-19 1982-06-16 Eduard Anton Burgemeister Werkwijze en inrichting voor het detecteren van ioniserende straling.
IL81537A (en) * 1986-02-24 1991-05-12 De Beers Ind Diamond Method and synthetic diamond detector for detection of nuclear radiation
ZA874362B (en) * 1986-06-20 1988-02-24 De Beers Ind Diamond Forming contacts on diamonds
JPS6385487A (ja) * 1986-09-30 1988-04-15 Toshiba Corp 放射線検出器
US4888483A (en) * 1987-10-27 1989-12-19 Grobbelaar Jacobus H Diamond radiation probe
GB8902443D0 (en) * 1989-02-03 1989-03-22 Jones Barbara L Radiation detector
US5079425A (en) * 1990-01-10 1992-01-07 Sumitomo Electric Industries, Ltd. Radiation detecting element
JPH05891A (ja) * 1991-06-21 1993-01-08 Canon Inc ダイヤモンド−金属接合体
EP1468309B1 (fr) 2002-01-25 2007-08-08 Gesellschaft für Schwerionenforschung mbH Detecteur concu pour detecter des faisceaux de particules et procede de fabrication dudit detecteur
FR2875014B1 (fr) * 2004-09-03 2006-12-01 Commissariat Energie Atomique Detection a base de diamant synthetique
US8642944B2 (en) * 2007-08-31 2014-02-04 Schlumberger Technology Corporation Downhole tools with solid-state neutron monitors
JP7257312B2 (ja) * 2019-11-21 2023-04-13 日立Ｇｅニュークリア・エナジー株式会社 放射線計測装置、放射線計測システム及び放射線計測方法
CN114063140B (zh) * 2021-11-16 2023-12-05 郑州工程技术学院 一种消除极化效应的金刚石中子探测器的制备方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL274771A (fr) * 1961-02-14

Also Published As

Publication number Publication date
DE1764066B1 (de) 1971-08-05
US3665193A (en) 1972-05-23
BE712957A (fr) 1968-09-30
GB1205115A (en) 1970-09-16
JPS5020468B1 (fr) 1975-07-15

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