GB1199934A - Improvements in or relating to Photo-Electric Devices - Google Patents

Improvements in or relating to Photo-Electric Devices

Info

Publication number
GB1199934A
GB1199934A GB46126/66A GB4612666A GB1199934A GB 1199934 A GB1199934 A GB 1199934A GB 46126/66 A GB46126/66 A GB 46126/66A GB 4612666 A GB4612666 A GB 4612666A GB 1199934 A GB1199934 A GB 1199934A
Authority
GB
United Kingdom
Prior art keywords
region
photo
layer
oxide
diffused
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB46126/66A
Inventor
Kenneth John Sidney Cave
Brian David Williams
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Plessey Co Ltd
Original Assignee
Plessey Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Plessey Co Ltd filed Critical Plessey Co Ltd
Priority to GB46126/66A priority Critical patent/GB1199934A/en
Priority to NL6713587A priority patent/NL6713587A/xx
Priority to FR124212A priority patent/FR1540741A/en
Priority to DE19671614348 priority patent/DE1614348A1/en
Publication of GB1199934A publication Critical patent/GB1199934A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/03529—Shape of the potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)

Abstract

1,199,934. Photo-electric devices. PLESSEY CO. Ltd. 25 Sept., 1967 [14 Oct., 1966], No. 46126/66. Heading H1K. In a photo-diode the P-type zone comprises a region 6 of relatively small cross-section connected to an electrode 8 on the surface 10 and joined to a broader region 5 spaced from the surface 10. In the form shown the region 5 is diffused into an N-type substrate 1 through a photo-resistively defined oxide mask, and after removal of the mask a further N-type layer 9 is epitaxially deposited over the region 5. The region 6 is then diffused into this layer and an oxide coating 7 and electrode 8 are applied. The regions 5, 6 may alternatively be formed by ion implantation. Further semi-conductor devices such as metal-oxide-semi-conductor field effect transistors may be formed within the layer 9 to provide integrated circuits acting as amplifiers or pulse generators for scanning purposes in television cameras or infra-red photography.
GB46126/66A 1966-10-14 1966-10-14 Improvements in or relating to Photo-Electric Devices Expired GB1199934A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
GB46126/66A GB1199934A (en) 1966-10-14 1966-10-14 Improvements in or relating to Photo-Electric Devices
NL6713587A NL6713587A (en) 1966-10-14 1967-10-05
FR124212A FR1540741A (en) 1966-10-14 1967-10-12 Photoelectric device
DE19671614348 DE1614348A1 (en) 1966-10-14 1967-10-13 Photoelectric semiconductor device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB46126/66A GB1199934A (en) 1966-10-14 1966-10-14 Improvements in or relating to Photo-Electric Devices

Publications (1)

Publication Number Publication Date
GB1199934A true GB1199934A (en) 1970-07-22

Family

ID=10439947

Family Applications (1)

Application Number Title Priority Date Filing Date
GB46126/66A Expired GB1199934A (en) 1966-10-14 1966-10-14 Improvements in or relating to Photo-Electric Devices

Country Status (3)

Country Link
DE (1) DE1614348A1 (en)
GB (1) GB1199934A (en)
NL (1) NL6713587A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0178664A2 (en) * 1984-10-18 1986-04-23 Matsushita Electronics Corporation Solid state image sensing device and method for making the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0178664A2 (en) * 1984-10-18 1986-04-23 Matsushita Electronics Corporation Solid state image sensing device and method for making the same
EP0178664A3 (en) * 1984-10-18 1986-10-15 Matsushita Electronics Corporation Solid state image sensing device and method for making the same

Also Published As

Publication number Publication date
NL6713587A (en) 1968-04-16
DE1614348A1 (en) 1970-07-02

Similar Documents

Publication Publication Date Title
GB1527069A (en) Photoelectric elements for a solid state image pickup device
GB1328145A (en) Method of producing integrated cirucits
GB1313829A (en) Transistors and aproduction thereof
GB1459040A (en) Semiconductor devices
GB1067926A (en) Improvements in or relating to semiconductors
GB1470211A (en) Semiconductor devices
GB1109371A (en) Metal-oxide-semiconductor field effect transistor
GB1194113A (en) A Method of Manufacturing Transistors
JPS538572A (en) Field effect type transistor
IE33394B1 (en) Improvements in semiconductor devices
GB1199934A (en) Improvements in or relating to Photo-Electric Devices
GB1472113A (en) Semiconductor device circuits
GB1046168A (en) Semiconductor light modulator
GB1106787A (en) Improvements in semiconductor devices
JPS5469388A (en) Junction type field effect semiconductor device and its production
GB1086856A (en) Improvements in or relating to methods of manufacturing semi-conductor devices
GB1260567A (en) Improvements in or relating to semiconductor devices
GB1220854A (en) Improvements in transistors
JPS5588378A (en) Semiconductor device
JPS5588372A (en) Lateral type transistor
GB1069467A (en) Improvements in and relating to methods of masking
GB1004832A (en) Improvements in or relating to semiconductor devices
JPS54161891A (en) Field effect transistor
JPS54149478A (en) Junction type field effect semiconductor device
JPS54100270A (en) Semiconductor device

Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees