GB1193942A - Improvements in or relating to Methods of Producing rectifying Metal-Semiconductor Junctions in the Manufacture of Thin-Film Semiconductor Devices - Google Patents

Improvements in or relating to Methods of Producing rectifying Metal-Semiconductor Junctions in the Manufacture of Thin-Film Semiconductor Devices

Info

Publication number
GB1193942A
GB1193942A GB438769A GB438769A GB1193942A GB 1193942 A GB1193942 A GB 1193942A GB 438769 A GB438769 A GB 438769A GB 438769 A GB438769 A GB 438769A GB 1193942 A GB1193942 A GB 1193942A
Authority
GB
United Kingdom
Prior art keywords
semi
conductor
metal
semiconductor
relating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB438769A
Inventor
Hans Lippmann
Roland Kohler
Werner Kosak
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Arbeitsstelle fuer Molekularelektronik
Original Assignee
Arbeitsstelle fuer Molekularelektronik
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Arbeitsstelle fuer Molekularelektronik filed Critical Arbeitsstelle fuer Molekularelektronik
Priority to GB438769A priority Critical patent/GB1193942A/en
Publication of GB1193942A publication Critical patent/GB1193942A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

1,193,942. Semi-conductor devices. ARBEITSSTELLE FœR MOLEKULARELEKTRONIK. 27 Jan., 1969, No. 4387/69. Heading H1K. A rectifying metal-semiconductor contact of a thin film device, produced by applying metal to a substrate before a polycrystalline semiconductor material, is subjected to a heat treatment. The substrate may be glass or ceramic, the metal may be gold and the semiconductor may be cadmium sulphide. The device is annealed at about 500‹ C. for at least 5 minutes in an inert atmosphere such as nitrogen to reduce defects in the semi-conductor and to partially diffuse the gold into the surface of the semi-conductor to overcome the effects of deviations in the stoichiometry of the initially deposited layers of semi-conductor material. An ohmic contact is applied to the device after the annealing step. The device may form part of an integrated circuit.
GB438769A 1969-01-27 1969-01-27 Improvements in or relating to Methods of Producing rectifying Metal-Semiconductor Junctions in the Manufacture of Thin-Film Semiconductor Devices Expired GB1193942A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB438769A GB1193942A (en) 1969-01-27 1969-01-27 Improvements in or relating to Methods of Producing rectifying Metal-Semiconductor Junctions in the Manufacture of Thin-Film Semiconductor Devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB438769A GB1193942A (en) 1969-01-27 1969-01-27 Improvements in or relating to Methods of Producing rectifying Metal-Semiconductor Junctions in the Manufacture of Thin-Film Semiconductor Devices

Publications (1)

Publication Number Publication Date
GB1193942A true GB1193942A (en) 1970-06-03

Family

ID=9776212

Family Applications (1)

Application Number Title Priority Date Filing Date
GB438769A Expired GB1193942A (en) 1969-01-27 1969-01-27 Improvements in or relating to Methods of Producing rectifying Metal-Semiconductor Junctions in the Manufacture of Thin-Film Semiconductor Devices

Country Status (1)

Country Link
GB (1) GB1193942A (en)

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Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees