GB1193479A - Improvements in or relating to Indirectly-Heated Thermistors - Google Patents
Improvements in or relating to Indirectly-Heated ThermistorsInfo
- Publication number
- GB1193479A GB1193479A GB56048/67A GB5604867A GB1193479A GB 1193479 A GB1193479 A GB 1193479A GB 56048/67 A GB56048/67 A GB 56048/67A GB 5604867 A GB5604867 A GB 5604867A GB 1193479 A GB1193479 A GB 1193479A
- Authority
- GB
- United Kingdom
- Prior art keywords
- heater
- thermistor
- dec
- indirectly
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Thermistors And Varistors (AREA)
Abstract
1,193,479. Thermistors. FUJITSU Ltd. 8 Dec., 1967 [9 Dec., 1966], No. 56048/67. Heading H1K. An indirectly heated thermistor comprises a thermistor element 1 constituted by a single crystal semi-conductor, a heater 4 for heating the element, and an insulating film 3 between the heater and the element. In a preferred embodiment the crystal 1 consists of germanium containing less than 10<SP>14</SP> atoms/c.c. of an impurity such as antimony and having goldantimony electrodes 2, the insulating film 3 consists of silicon monoxide, and the heater 4 consists of a deposited layer of nickel-chromium alloy having gold-chromium electrodes 5. The heater is protected by a further silicon monoxide film 6. The thermistor may be mounted by means of glass supports on a header and hermetically sealed in an enclosure.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8089366 | 1966-12-09 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1193479A true GB1193479A (en) | 1970-06-03 |
Family
ID=13731025
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB56048/67A Expired GB1193479A (en) | 1966-12-09 | 1967-12-08 | Improvements in or relating to Indirectly-Heated Thermistors |
Country Status (3)
Country | Link |
---|---|
US (1) | US3505632A (en) |
DE (1) | DE1648210B1 (en) |
GB (1) | GB1193479A (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3697863A (en) * | 1971-01-04 | 1972-10-10 | Texas Instruments Inc | Overcurrent protection system and sensor used therewith |
US3801949A (en) * | 1973-03-08 | 1974-04-02 | Rca Corp | Thermal detector and method of making the same |
US3922658A (en) * | 1974-12-04 | 1975-11-25 | Bendix Corp | Fluid level monitor |
US4510482A (en) * | 1982-12-15 | 1985-04-09 | Tektronix, Inc. | Protective circuit for electronic test probes |
US6300859B1 (en) * | 1999-08-24 | 2001-10-09 | Tyco Electronics Corporation | Circuit protection devices |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB675730A (en) * | 1951-01-30 | 1952-07-16 | Standard Telephones Cables Ltd | Improvements in or relating to thermosensitive resistance elements |
US2926299A (en) * | 1954-04-21 | 1960-02-23 | Mcdermott Controls Inc | Electrical instrument with thermistor sensing element |
US2947844A (en) * | 1958-03-24 | 1960-08-02 | Mc Graw Edison Co | Positive temperature coefficient semiconductor device |
US3369207A (en) * | 1963-03-27 | 1968-02-13 | Hasegawa Electronics Co Ltd | Temperature varied semiconductor device |
US3292129A (en) * | 1963-10-07 | 1966-12-13 | Grace W R & Co | Silicon thermistors |
US3270309A (en) * | 1964-01-29 | 1966-08-30 | Grace W R & Co | Temperature sensitive device |
US3323027A (en) * | 1964-09-16 | 1967-05-30 | Rca Corp | Semiconductor devices with layer of silicon monoxide and germanium mixture and methods of fabricating them |
-
1967
- 1967-12-06 US US689242A patent/US3505632A/en not_active Expired - Lifetime
- 1967-12-07 DE DE19671648210 patent/DE1648210B1/en active Pending
- 1967-12-08 GB GB56048/67A patent/GB1193479A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
US3505632A (en) | 1970-04-07 |
DE1648210B1 (en) | 1972-06-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed [section 19, patents act 1949] | ||
PE20 | Patent expired after termination of 20 years |