GB807619A - Improvements in or relating to thermocouples - Google Patents
Improvements in or relating to thermocouplesInfo
- Publication number
- GB807619A GB807619A GB3968/56A GB396856A GB807619A GB 807619 A GB807619 A GB 807619A GB 3968/56 A GB3968/56 A GB 3968/56A GB 396856 A GB396856 A GB 396856A GB 807619 A GB807619 A GB 807619A
- Authority
- GB
- United Kingdom
- Prior art keywords
- boat
- crystals
- per cent
- expression
- axis
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 abstract 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052797 bismuth Inorganic materials 0.000 abstract 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 abstract 3
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 2
- 229910052740 iodine Inorganic materials 0.000 abstract 2
- 239000011630 iodine Substances 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 abstract 2
- 239000007795 chemical reaction product Substances 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 230000006698 induction Effects 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 239000000047 product Substances 0.000 abstract 1
- 238000007789 sealing Methods 0.000 abstract 1
- 229910052714 tellurium Inorganic materials 0.000 abstract 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/853—Thermoelectric active materials comprising inorganic compositions comprising arsenic, antimony or bismuth
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/852—Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
807,619. Thermocouples. GENERAL ELECTRIC CO. Ltd. Jan. 30, 1957 [Feb. 8, 1956], No. 3968/56. Class 37. In a thermocouple comprising elements of P- and N-type bismuth telluride each element consists of one or more crystals each disposed with its principal axis in a plane perpendicular to the line joining the hot and cold junctions, and the resistivities Pp and P N milliohm cms. measured along this line are such that the expression [1.14 - (P P - 1.23)<SP>2</SP> - (P N - 1-28)<SP>2</SP>] is less than zero if T, the mean operating temperature, is not greater than 293 K. or such that the expression [(2.54 - 0.005T)<SP>2</SP> - (Pp - 2.87 + 0.0056T)<SP>2</SP> - (Pn - 2.92 + 0.0056T)<SP>2</SP>] has a value not less than zero if T is above 293 K. The invention is based on the fact that crystals of bismuth telluride have anisotropic # and p, and that the product #p, which forms the denominator of a known expression for the figure of merit # of a thermocouple, has a minimum value in a direction perpendicular to the principal crystal axis. With the crystals orientated to give the optimum # it has been found that 6 has a value within 10 per cent of the maximum possible at temperature T with Bi 2 Te 3 elements if the above resistivity criteria are satisfied. The Bi 2 Te 3 is prepared by the following steps: mixing stoichiometric proportions of bismuth and tellurium in a cylindrical silica bomb with a small amount of the donor iodine or the acceptor lead, evacuating and sealing the bomb, heating to 900 C. for 3 hours, loading the cooled reaction product in an elongated silica boat, melting by induction heating, resolidifying, and then traversing a molten zone from one end of the boat to the other in an inert atmosphere. This produces a monocrystalline ingot or polycrystalline mass in which the principal crystal axis is transverse to the boat axis. Amounts of impurities satisfying the resistivity criteria for T = 293 are 0.07-0.16 per cent by weight of iodine for the N-type material and 0.03-0.12 per cent by weight of lead for the P-type material.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB3968/56A GB807619A (en) | 1956-02-08 | 1956-02-08 | Improvements in or relating to thermocouples |
FR1166210D FR1166210A (en) | 1956-02-08 | 1957-02-08 | Thermocouple |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB3968/56A GB807619A (en) | 1956-02-08 | 1956-02-08 | Improvements in or relating to thermocouples |
Publications (1)
Publication Number | Publication Date |
---|---|
GB807619A true GB807619A (en) | 1959-01-21 |
Family
ID=9768282
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB3968/56A Expired GB807619A (en) | 1956-02-08 | 1956-02-08 | Improvements in or relating to thermocouples |
Country Status (2)
Country | Link |
---|---|
FR (1) | FR1166210A (en) |
GB (1) | GB807619A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3129117A (en) * | 1960-08-12 | 1964-04-14 | Westinghouse Electric Corp | Thermoelectric materials and their production by powdered metallurgy techniques |
US3136134A (en) * | 1960-11-16 | 1964-06-09 | Bell Telephone Labor Inc | Thermoelectric refrigerator |
DE10230080A1 (en) * | 2002-06-27 | 2004-01-22 | Infineon Technologies Ag | Method for producing a thermoelectric layer structure and components of a thermoelectric layer structure |
-
1956
- 1956-02-08 GB GB3968/56A patent/GB807619A/en not_active Expired
-
1957
- 1957-02-08 FR FR1166210D patent/FR1166210A/en not_active Expired
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3129117A (en) * | 1960-08-12 | 1964-04-14 | Westinghouse Electric Corp | Thermoelectric materials and their production by powdered metallurgy techniques |
US3136134A (en) * | 1960-11-16 | 1964-06-09 | Bell Telephone Labor Inc | Thermoelectric refrigerator |
DE10230080A1 (en) * | 2002-06-27 | 2004-01-22 | Infineon Technologies Ag | Method for producing a thermoelectric layer structure and components of a thermoelectric layer structure |
US6815244B2 (en) | 2002-06-27 | 2004-11-09 | Infineon Technologies Ag | Methods for producing a thermoelectric layer structure and components with a thermoelectric layer structure |
DE10230080B4 (en) * | 2002-06-27 | 2008-12-24 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Method for producing a thermoelectric layer structure and components having a thermoelectric layer structure |
Also Published As
Publication number | Publication date |
---|---|
FR1166210A (en) | 1958-11-04 |
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