GB807619A - Improvements in or relating to thermocouples - Google Patents

Improvements in or relating to thermocouples

Info

Publication number
GB807619A
GB807619A GB3968/56A GB396856A GB807619A GB 807619 A GB807619 A GB 807619A GB 3968/56 A GB3968/56 A GB 3968/56A GB 396856 A GB396856 A GB 396856A GB 807619 A GB807619 A GB 807619A
Authority
GB
United Kingdom
Prior art keywords
boat
crystals
per cent
expression
axis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3968/56A
Inventor
Hiroshi Julian Goldsmid
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co PLC
Original Assignee
General Electric Co PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co PLC filed Critical General Electric Co PLC
Priority to GB3968/56A priority Critical patent/GB807619A/en
Priority to FR1166210D priority patent/FR1166210A/en
Publication of GB807619A publication Critical patent/GB807619A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/853—Thermoelectric active materials comprising inorganic compositions comprising arsenic, antimony or bismuth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/852—Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

807,619. Thermocouples. GENERAL ELECTRIC CO. Ltd. Jan. 30, 1957 [Feb. 8, 1956], No. 3968/56. Class 37. In a thermocouple comprising elements of P- and N-type bismuth telluride each element consists of one or more crystals each disposed with its principal axis in a plane perpendicular to the line joining the hot and cold junctions, and the resistivities Pp and P N milliohm cms. measured along this line are such that the expression [1.14 - (P P - 1.23)<SP>2</SP> - (P N - 1-28)<SP>2</SP>] is less than zero if T, the mean operating temperature, is not greater than 293‹ K. or such that the expression [(2.54 - 0.005T)<SP>2</SP> - (Pp - 2.87 + 0.0056T)<SP>2</SP> - (Pn - 2.92 + 0.0056T)<SP>2</SP>] has a value not less than zero if T is above 293 K. The invention is based on the fact that crystals of bismuth telluride have anisotropic # and p, and that the product #p, which forms the denominator of a known expression for the figure of merit # of a thermocouple, has a minimum value in a direction perpendicular to the principal crystal axis. With the crystals orientated to give the optimum # it has been found that 6 has a value within 10 per cent of the maximum possible at temperature T with Bi 2 Te 3 elements if the above resistivity criteria are satisfied. The Bi 2 Te 3 is prepared by the following steps: mixing stoichiometric proportions of bismuth and tellurium in a cylindrical silica bomb with a small amount of the donor iodine or the acceptor lead, evacuating and sealing the bomb, heating to 900‹ C. for 3 hours, loading the cooled reaction product in an elongated silica boat, melting by induction heating, resolidifying, and then traversing a molten zone from one end of the boat to the other in an inert atmosphere. This produces a monocrystalline ingot or polycrystalline mass in which the principal crystal axis is transverse to the boat axis. Amounts of impurities satisfying the resistivity criteria for T = 293 are 0.07-0.16 per cent by weight of iodine for the N-type material and 0.03-0.12 per cent by weight of lead for the P-type material.
GB3968/56A 1956-02-08 1956-02-08 Improvements in or relating to thermocouples Expired GB807619A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB3968/56A GB807619A (en) 1956-02-08 1956-02-08 Improvements in or relating to thermocouples
FR1166210D FR1166210A (en) 1956-02-08 1957-02-08 Thermocouple

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB3968/56A GB807619A (en) 1956-02-08 1956-02-08 Improvements in or relating to thermocouples

Publications (1)

Publication Number Publication Date
GB807619A true GB807619A (en) 1959-01-21

Family

ID=9768282

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3968/56A Expired GB807619A (en) 1956-02-08 1956-02-08 Improvements in or relating to thermocouples

Country Status (2)

Country Link
FR (1) FR1166210A (en)
GB (1) GB807619A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3129117A (en) * 1960-08-12 1964-04-14 Westinghouse Electric Corp Thermoelectric materials and their production by powdered metallurgy techniques
US3136134A (en) * 1960-11-16 1964-06-09 Bell Telephone Labor Inc Thermoelectric refrigerator
DE10230080A1 (en) * 2002-06-27 2004-01-22 Infineon Technologies Ag Method for producing a thermoelectric layer structure and components of a thermoelectric layer structure

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3129117A (en) * 1960-08-12 1964-04-14 Westinghouse Electric Corp Thermoelectric materials and their production by powdered metallurgy techniques
US3136134A (en) * 1960-11-16 1964-06-09 Bell Telephone Labor Inc Thermoelectric refrigerator
DE10230080A1 (en) * 2002-06-27 2004-01-22 Infineon Technologies Ag Method for producing a thermoelectric layer structure and components of a thermoelectric layer structure
US6815244B2 (en) 2002-06-27 2004-11-09 Infineon Technologies Ag Methods for producing a thermoelectric layer structure and components with a thermoelectric layer structure
DE10230080B4 (en) * 2002-06-27 2008-12-24 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Method for producing a thermoelectric layer structure and components having a thermoelectric layer structure

Also Published As

Publication number Publication date
FR1166210A (en) 1958-11-04

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