GB1193373A - Improvements in and relating to Electronic Devices - Google Patents
Improvements in and relating to Electronic DevicesInfo
- Publication number
- GB1193373A GB1193373A GB351668A GB351668A GB1193373A GB 1193373 A GB1193373 A GB 1193373A GB 351668 A GB351668 A GB 351668A GB 351668 A GB351668 A GB 351668A GB 1193373 A GB1193373 A GB 1193373A
- Authority
- GB
- United Kingdom
- Prior art keywords
- aluminium
- nickel
- layer
- silicon oxide
- jan
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01014—Silicon [Si]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01024—Chromium [Cr]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Die Bonding (AREA)
- Conductive Materials (AREA)
- Wire Bonding (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
1,193,373. Semi-conductor devices. PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd. 23 Jan., 1968 [26 Jan., 1967], No. 3516/68. Heading H1K. [Also in Division C7] Electrical contact to an electronic device such as a diode, transistor, or integrated circuit is made by evaporating a layer of aluminium on to the surface of the device, by forming a layer of elementary nickel on at least parts of the aluminium layer (by evaporation, by atomizing techniques, or by vapour deposition), and by electrodepositing metal on to at least part of the nickel layer. In the embodiment, aluminium is deposited over a silicon oxide or silicon oxide-boron oxide film, aluminium is etched away except from the vicinity of holes exposing the emitter and base region of a transistor, and the remaining aluminium is alloyed into the semi-conductor. An overall coating of aluminium is then applied followed by an overall evaporated nickel coating (obtained by passing a heating current through a nickel filament). The nickel layer is selectively etched to form a desired contact pattern and copper then electroplated on to selected parts of the nickel pattern to form raised areas for flip-chip bonding. The structure is completed by etching away that part of the aluminium layer which is not covered by nickel. Etchant compositions are disclosed for selective removal of one or both of aluminium and nickel from silicon oxide.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL6701217A NL143369B (en) | 1967-01-26 | 1967-01-26 | PROCEDURE FOR FITTING AN ELECTRICAL CONNECTION TO A SURFACE OF A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE OBTAINED IN ACCORDANCE WITH THIS PROCEDURE. |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1193373A true GB1193373A (en) | 1970-05-28 |
Family
ID=19799131
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB351668A Expired GB1193373A (en) | 1967-01-26 | 1968-01-23 | Improvements in and relating to Electronic Devices |
Country Status (11)
Country | Link |
---|---|
JP (1) | JPS514631B1 (en) |
AT (1) | AT280351B (en) |
BE (1) | BE709837A (en) |
CA (1) | CA918813A (en) |
CH (1) | CH468698A (en) |
DE (1) | DE1614310C3 (en) |
ES (1) | ES349649A1 (en) |
FR (1) | FR1551826A (en) |
GB (1) | GB1193373A (en) |
NL (1) | NL143369B (en) |
SE (1) | SE363191B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2176938A (en) * | 1985-06-24 | 1987-01-07 | Nat Semiconductor Corp | Pad metallization structure |
-
1967
- 1967-01-26 NL NL6701217A patent/NL143369B/en not_active IP Right Cessation
- 1967-12-14 DE DE19671614310 patent/DE1614310C3/en not_active Expired
-
1968
- 1968-01-22 CA CA010400A patent/CA918813A/en not_active Expired
- 1968-01-23 SE SE91568A patent/SE363191B/xx unknown
- 1968-01-23 CH CH99468A patent/CH468698A/en unknown
- 1968-01-23 GB GB351668A patent/GB1193373A/en not_active Expired
- 1968-01-23 AT AT66868A patent/AT280351B/en not_active IP Right Cessation
- 1968-01-23 ES ES349649A patent/ES349649A1/en not_active Expired
- 1968-01-24 BE BE709837D patent/BE709837A/xx not_active Expired
- 1968-01-26 FR FR1551826D patent/FR1551826A/fr not_active Expired
-
1970
- 1970-03-23 JP JP2400770A patent/JPS514631B1/ja active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2176938A (en) * | 1985-06-24 | 1987-01-07 | Nat Semiconductor Corp | Pad metallization structure |
Also Published As
Publication number | Publication date |
---|---|
FR1551826A (en) | 1968-12-27 |
DE1614310A1 (en) | 1970-08-13 |
CH468698A (en) | 1969-02-15 |
SE363191B (en) | 1974-01-07 |
AT280351B (en) | 1970-04-10 |
ES349649A1 (en) | 1969-10-01 |
NL6701217A (en) | 1968-07-29 |
NL143369B (en) | 1974-09-16 |
BE709837A (en) | 1968-07-24 |
DE1614310C3 (en) | 1975-05-28 |
DE1614310B2 (en) | 1974-10-10 |
CA918813A (en) | 1973-01-09 |
JPS514631B1 (en) | 1976-02-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PCNP | Patent ceased through non-payment of renewal fee | ||
PCPE | Delete 'patent ceased' from journal |
Free format text: 4877,PAGE 2682 |
|
PCNP | Patent ceased through non-payment of renewal fee |