GB1193373A - Improvements in and relating to Electronic Devices - Google Patents

Improvements in and relating to Electronic Devices

Info

Publication number
GB1193373A
GB1193373A GB351668A GB351668A GB1193373A GB 1193373 A GB1193373 A GB 1193373A GB 351668 A GB351668 A GB 351668A GB 351668 A GB351668 A GB 351668A GB 1193373 A GB1193373 A GB 1193373A
Authority
GB
United Kingdom
Prior art keywords
aluminium
nickel
layer
silicon oxide
jan
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB351668A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Publication of GB1193373A publication Critical patent/GB1193373A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01014Silicon [Si]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01019Potassium [K]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01024Chromium [Cr]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01047Silver [Ag]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01074Tungsten [W]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Die Bonding (AREA)
  • Conductive Materials (AREA)
  • Wire Bonding (AREA)
  • Electroplating Methods And Accessories (AREA)

Abstract

1,193,373. Semi-conductor devices. PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd. 23 Jan., 1968 [26 Jan., 1967], No. 3516/68. Heading H1K. [Also in Division C7] Electrical contact to an electronic device such as a diode, transistor, or integrated circuit is made by evaporating a layer of aluminium on to the surface of the device, by forming a layer of elementary nickel on at least parts of the aluminium layer (by evaporation, by atomizing techniques, or by vapour deposition), and by electrodepositing metal on to at least part of the nickel layer. In the embodiment, aluminium is deposited over a silicon oxide or silicon oxide-boron oxide film, aluminium is etched away except from the vicinity of holes exposing the emitter and base region of a transistor, and the remaining aluminium is alloyed into the semi-conductor. An overall coating of aluminium is then applied followed by an overall evaporated nickel coating (obtained by passing a heating current through a nickel filament). The nickel layer is selectively etched to form a desired contact pattern and copper then electroplated on to selected parts of the nickel pattern to form raised areas for flip-chip bonding. The structure is completed by etching away that part of the aluminium layer which is not covered by nickel. Etchant compositions are disclosed for selective removal of one or both of aluminium and nickel from silicon oxide.
GB351668A 1967-01-26 1968-01-23 Improvements in and relating to Electronic Devices Expired GB1193373A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6701217A NL143369B (en) 1967-01-26 1967-01-26 PROCEDURE FOR FITTING AN ELECTRICAL CONNECTION TO A SURFACE OF A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE OBTAINED IN ACCORDANCE WITH THIS PROCEDURE.

Publications (1)

Publication Number Publication Date
GB1193373A true GB1193373A (en) 1970-05-28

Family

ID=19799131

Family Applications (1)

Application Number Title Priority Date Filing Date
GB351668A Expired GB1193373A (en) 1967-01-26 1968-01-23 Improvements in and relating to Electronic Devices

Country Status (11)

Country Link
JP (1) JPS514631B1 (en)
AT (1) AT280351B (en)
BE (1) BE709837A (en)
CA (1) CA918813A (en)
CH (1) CH468698A (en)
DE (1) DE1614310C3 (en)
ES (1) ES349649A1 (en)
FR (1) FR1551826A (en)
GB (1) GB1193373A (en)
NL (1) NL143369B (en)
SE (1) SE363191B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2176938A (en) * 1985-06-24 1987-01-07 Nat Semiconductor Corp Pad metallization structure

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2176938A (en) * 1985-06-24 1987-01-07 Nat Semiconductor Corp Pad metallization structure

Also Published As

Publication number Publication date
FR1551826A (en) 1968-12-27
DE1614310A1 (en) 1970-08-13
CH468698A (en) 1969-02-15
SE363191B (en) 1974-01-07
AT280351B (en) 1970-04-10
ES349649A1 (en) 1969-10-01
NL6701217A (en) 1968-07-29
NL143369B (en) 1974-09-16
BE709837A (en) 1968-07-24
DE1614310C3 (en) 1975-05-28
DE1614310B2 (en) 1974-10-10
CA918813A (en) 1973-01-09
JPS514631B1 (en) 1976-02-13

Similar Documents

Publication Publication Date Title
US3456335A (en) Contacting arrangement for solidstate components
GB1319682A (en) Thin film metallization process for microcircuits
US3625837A (en) Electroplating solder-bump connectors on microcircuits
US3429029A (en) Semiconductor device
GB1434766A (en) Micro-miniature electronic components
GB1285525A (en) Masking techniques for use in fabricating microelectronic components and articles produced thereby
GB1466679A (en) Manufacture of semiconductor devices
US3567506A (en) Method for providing a planar transistor with heat-dissipating top base and emitter contacts
US3437888A (en) Method of providing electrical contacts by sputtering a film of gold on a layer of sputtered molybdenum
US3590478A (en) Method of forming electrical leads for semiconductor device
US3620837A (en) Reliability of aluminum and aluminum alloy lands
GB1193373A (en) Improvements in and relating to Electronic Devices
US3490943A (en) Method of forming juxtaposed metal layers separated by a narrow gap on a substrate and objects manufactured by the use of such methods
US3447984A (en) Method for forming sharply defined apertures in an insulating layer
GB1136447A (en) Improvements relating to conductive base supports for semiconductor devices
GB1283376A (en) A method of producing a semiconductor device or a circuit with layer-type components
US3088435A (en) Masking device useful for making transistors
GB1077224A (en) Method and apparatus for attaching an electrical component to a circuit
GB1215088A (en) Process for affixing thin film electrical contacts to a semiconductor body comprising silicon carbide
US3409807A (en) Semiconductor arrangement with capacitative shielding means between conductive strips and semiconductor body
US4672415A (en) Power thyristor on a substrate
US3615874A (en) Method for producing passivated pn junctions by ion beam implantation
GB1524870A (en) Provision of conductor layer patterns
US3576684A (en) Aluminum-alloy junction devices using silicon nitride as a mask
US3506880A (en) Semiconductor device

Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee
PCPE Delete 'patent ceased' from journal

Free format text: 4877,PAGE 2682

PCNP Patent ceased through non-payment of renewal fee