ES349649A1 - Improvements in and relating to Electronic Devices - Google Patents

Improvements in and relating to Electronic Devices

Info

Publication number
ES349649A1
ES349649A1 ES349649A ES349649A ES349649A1 ES 349649 A1 ES349649 A1 ES 349649A1 ES 349649 A ES349649 A ES 349649A ES 349649 A ES349649 A ES 349649A ES 349649 A1 ES349649 A1 ES 349649A1
Authority
ES
Spain
Prior art keywords
aluminium
nickel
layer
silicon oxide
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES349649A
Other languages
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of ES349649A1 publication Critical patent/ES349649A1/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01024—Chromium [Cr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

Abstract

Electrical contact to an electronic device such as a diode, transistor, or integrated circuit is made by evaporating a layer of aluminium on to the surface of the device, by forming a layer of elementary nickel on at least parts of the aluminium layer (by evaporation, by atomizing techniques, or by vapour deposition), and by electrodepositing metal on to at least part of the nickel layer. In the embodiment, aluminium is deposited over a silicon oxide or silicon oxide-boron oxide film, aluminium is etched away except from the vicinity of holes exposing the emitter and base region of a transistor, and the remaining aluminium is alloyed into the semi-conductor. An overall coating of aluminium is then applied followed by an overall evaporated nickel coating (obtained by passing a heating current through a nickel filament). The nickel layer is selectively etched to form a desired contact pattern and copper then electroplated on to selected parts of the nickel pattern to form raised areas for flip-chip bonding. The structure is completed by etching away that part of the aluminium layer which is not covered by nickel. Etchant compositions are disclosed for selective removal of one or both of aluminium and nickel from silicon oxide.
ES349649A 1967-01-26 1968-01-23 Improvements in and relating to Electronic Devices Expired ES349649A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6701217A NL143369B (en) 1967-01-26 1967-01-26 PROCEDURE FOR FITTING AN ELECTRICAL CONNECTION TO A SURFACE OF A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE OBTAINED IN ACCORDANCE WITH THIS PROCEDURE.

Publications (1)

Publication Number Publication Date
ES349649A1 true ES349649A1 (en) 1969-10-01

Family

ID=19799131

Family Applications (1)

Application Number Title Priority Date Filing Date
ES349649A Expired ES349649A1 (en) 1967-01-26 1968-01-23 Improvements in and relating to Electronic Devices

Country Status (11)

Country Link
JP (1) JPS514631B1 (en)
AT (1) AT280351B (en)
BE (1) BE709837A (en)
CA (1) CA918813A (en)
CH (1) CH468698A (en)
DE (1) DE1614310C3 (en)
ES (1) ES349649A1 (en)
FR (1) FR1551826A (en)
GB (1) GB1193373A (en)
NL (1) NL143369B (en)
SE (1) SE363191B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2176938A (en) * 1985-06-24 1987-01-07 Nat Semiconductor Corp Pad metallization structure

Also Published As

Publication number Publication date
FR1551826A (en) 1968-12-27
DE1614310A1 (en) 1970-08-13
GB1193373A (en) 1970-05-28
CH468698A (en) 1969-02-15
SE363191B (en) 1974-01-07
AT280351B (en) 1970-04-10
NL6701217A (en) 1968-07-29
NL143369B (en) 1974-09-16
BE709837A (en) 1968-07-24
DE1614310C3 (en) 1975-05-28
DE1614310B2 (en) 1974-10-10
CA918813A (en) 1973-01-09
JPS514631B1 (en) 1976-02-13

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