GB1188797A - Semiconductor Manufacture. - Google Patents

Semiconductor Manufacture.

Info

Publication number
GB1188797A
GB1188797A GB06564/67A GB1656467A GB1188797A GB 1188797 A GB1188797 A GB 1188797A GB 06564/67 A GB06564/67 A GB 06564/67A GB 1656467 A GB1656467 A GB 1656467A GB 1188797 A GB1188797 A GB 1188797A
Authority
GB
United Kingdom
Prior art keywords
electrodes
regions
photo
semi
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB06564/67A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Publication of GB1188797A publication Critical patent/GB1188797A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
    • H01L21/441—Deposition of conductive or insulating materials for electrodes
    • H01L21/443—Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49082—Resistor making
    • Y10T29/49099—Coating resistive material on a base

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
GB06564/67A 1966-04-14 1967-04-11 Semiconductor Manufacture. Expired GB1188797A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6604962A NL6604962A (US20100223739A1-20100909-C00025.png) 1966-04-14 1966-04-14

Publications (1)

Publication Number Publication Date
GB1188797A true GB1188797A (en) 1970-04-22

Family

ID=19796280

Family Applications (1)

Application Number Title Priority Date Filing Date
GB06564/67A Expired GB1188797A (en) 1966-04-14 1967-04-11 Semiconductor Manufacture.

Country Status (4)

Country Link
US (1) US3481031A (US20100223739A1-20100909-C00025.png)
DE (1) DE1614234A1 (US20100223739A1-20100909-C00025.png)
GB (1) GB1188797A (US20100223739A1-20100909-C00025.png)
NL (1) NL6604962A (US20100223739A1-20100909-C00025.png)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0005741A1 (en) * 1978-06-05 1979-12-12 International Business Machines Corporation A process for providing ion-implanted regions in a semiconductive substrate
EP0007668A1 (en) * 1978-07-31 1980-02-06 Philips Electronics Uk Limited The manufacture of a group of infra-red detector elements, and a group so manufactured
EP0007667A1 (en) * 1978-07-31 1980-02-06 Philips Electronics Uk Limited Infra-red detector elements and their manufacture

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1233545A (US20100223739A1-20100909-C00025.png) * 1967-08-18 1971-05-26
GB1244225A (en) * 1968-12-31 1971-08-25 Associated Semiconductor Mft Improvements in and relating to methods of manufacturing semiconductor devices
US4127931A (en) * 1974-10-04 1978-12-05 Nippon Electric Co., Ltd. Semiconductor device
JPS5812365A (ja) * 1981-07-15 1983-01-24 Japan Electronic Ind Dev Assoc<Jeida> 薄膜トランジスタ及びその製造方法
US4404731A (en) * 1981-10-01 1983-09-20 Xerox Corporation Method of forming a thin film transistor
JPS58170067A (ja) * 1982-03-31 1983-10-06 Fujitsu Ltd 薄膜トランジスタの製造方法
JP3478012B2 (ja) * 1995-09-29 2003-12-10 ソニー株式会社 薄膜半導体装置の製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2563503A (en) * 1951-08-07 Transistor
US2588254A (en) * 1950-05-09 1952-03-04 Purdue Research Foundation Photoelectric and thermoelectric device utilizing semiconducting material
BE525823A (US20100223739A1-20100909-C00025.png) * 1953-01-21
US2787564A (en) * 1954-10-28 1957-04-02 Bell Telephone Labor Inc Forming semiconductive devices by ionic bombardment
US2989385A (en) * 1957-05-14 1961-06-20 Bell Telephone Labor Inc Process for ion bombarding and etching metal
US2981877A (en) * 1959-07-30 1961-04-25 Fairchild Semiconductor Semiconductor device-and-lead structure
US3298863A (en) * 1964-05-08 1967-01-17 Joseph H Mccusker Method for fabricating thin film transistors

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0005741A1 (en) * 1978-06-05 1979-12-12 International Business Machines Corporation A process for providing ion-implanted regions in a semiconductive substrate
EP0007668A1 (en) * 1978-07-31 1980-02-06 Philips Electronics Uk Limited The manufacture of a group of infra-red detector elements, and a group so manufactured
EP0007667A1 (en) * 1978-07-31 1980-02-06 Philips Electronics Uk Limited Infra-red detector elements and their manufacture

Also Published As

Publication number Publication date
NL6604962A (US20100223739A1-20100909-C00025.png) 1967-10-16
DE1614234A1 (de) 1970-08-27
US3481031A (en) 1969-12-02

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee