GB1188507A - Improvements in or relating to the Production of Masks on Semiconductor Bodies Involving Anodizing Treatment - Google Patents

Improvements in or relating to the Production of Masks on Semiconductor Bodies Involving Anodizing Treatment

Info

Publication number
GB1188507A
GB1188507A GB07721/67A GB1772167A GB1188507A GB 1188507 A GB1188507 A GB 1188507A GB 07721/67 A GB07721/67 A GB 07721/67A GB 1772167 A GB1772167 A GB 1772167A GB 1188507 A GB1188507 A GB 1188507A
Authority
GB
United Kingdom
Prior art keywords
film
face
portions
anodizing
solution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB07721/67A
Other languages
English (en)
Inventor
Paul Felix Schmidt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of GB1188507A publication Critical patent/GB1188507A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/662—Laminate layers, e.g. stacks of alternating high-k metal oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6324—Formation by anodic treatments, e.g. anodic oxidation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/114—Nitrides of silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking

Landscapes

  • Formation Of Insulating Films (AREA)
  • Weting (AREA)
GB07721/67A 1966-05-11 1967-04-18 Improvements in or relating to the Production of Masks on Semiconductor Bodies Involving Anodizing Treatment Expired GB1188507A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US54933866A 1966-05-11 1966-05-11

Publications (1)

Publication Number Publication Date
GB1188507A true GB1188507A (en) 1970-04-15

Family

ID=24192584

Family Applications (1)

Application Number Title Priority Date Filing Date
GB07721/67A Expired GB1188507A (en) 1966-05-11 1967-04-18 Improvements in or relating to the Production of Masks on Semiconductor Bodies Involving Anodizing Treatment

Country Status (7)

Country Link
US (1) US3438873A (https=)
BE (1) BE696330A (https=)
ES (1) ES341094A1 (https=)
GB (1) GB1188507A (https=)
IL (1) IL27728A (https=)
NL (1) NL6706537A (https=)
NO (1) NO118985B (https=)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3979768A (en) * 1966-03-23 1976-09-07 Hitachi, Ltd. Semiconductor element having surface coating comprising silicon nitride and silicon oxide films
US3645807A (en) * 1966-12-26 1972-02-29 Hitachi Ltd Method for manufacturing a semiconductor device
USRE28402E (en) * 1967-01-13 1975-04-29 Method for controlling semiconductor surface potential
US3767463A (en) * 1967-01-13 1973-10-23 Ibm Method for controlling semiconductor surface potential
US3887407A (en) * 1967-02-03 1975-06-03 Hitachi Ltd Method of manufacturing semiconductor device with nitride oxide double layer film
DE1614435B2 (de) * 1967-02-23 1979-05-23 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen von aus Germanium bestehenden, doppeldiffundierten Halbleiteranordnungen
US3537921A (en) * 1967-02-28 1970-11-03 Motorola Inc Selective hydrofluoric acid etching and subsequent processing
US3541676A (en) * 1967-12-18 1970-11-24 Gen Electric Method of forming field-effect transistors utilizing doped insulators as activator source
US3807038A (en) * 1969-05-22 1974-04-30 Mitsubishi Electric Corp Process of producing semiconductor devices
US3663279A (en) * 1969-11-19 1972-05-16 Bell Telephone Labor Inc Passivated semiconductor devices
DE2047998A1 (de) * 1970-09-30 1972-04-06 Licentia Gmbh Verfahren zum Herstellen einer Planaranordnung
US3924321A (en) * 1970-11-23 1975-12-09 Harris Corp Radiation hardened mis devices
US4058887A (en) * 1971-02-19 1977-11-22 Ibm Corporation Method for forming a transistor comprising layers of silicon dioxide and silicon nitride
US3707656A (en) * 1971-02-19 1972-12-26 Ibm Transistor comprising layers of silicon dioxide and silicon nitride
US3760242A (en) * 1972-03-06 1973-09-18 Ibm Coated semiconductor structures and methods of forming protective coverings on such structures
FR2466101A1 (fr) * 1979-09-18 1981-03-27 Thomson Csf Procede de formation de couches de silicium polycristallin localisees sur des zones recouvertes de silice d'une plaquette de silicium et application a la fabrication d'un transistor mos non plan autoaligne
US4596627A (en) * 1983-02-28 1986-06-24 Hewlett-Packard Company Etching a layer over a semiconductor
US6006763A (en) * 1995-01-11 1999-12-28 Seiko Epson Corporation Surface treatment method
EP0900477B1 (de) 1996-05-24 2001-07-18 Epcos Ag Elektronisches bauelement, insbesondere mit akustischen oberflächenwellen arbeitendes bauelement - ofw-bauelement

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2974075A (en) * 1957-10-28 1961-03-07 Bell Telephone Labor Inc Treatment of semiconductive devices
US3160539A (en) * 1958-09-08 1964-12-08 Trw Semiconductors Inc Surface treatment of silicon
US3088888A (en) * 1959-03-31 1963-05-07 Ibm Methods of etching a semiconductor device

Also Published As

Publication number Publication date
US3438873A (en) 1969-04-15
BE696330A (https=) 1967-09-01
NL6706537A (https=) 1967-11-13
ES341094A1 (es) 1968-06-16
NO118985B (https=) 1970-03-09
IL27728A (en) 1970-09-17

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees