GB1060257A - Improvements in and relating to the anodic treatment of metallic films - Google Patents
Improvements in and relating to the anodic treatment of metallic filmsInfo
- Publication number
- GB1060257A GB1060257A GB45656/64A GB4565664A GB1060257A GB 1060257 A GB1060257 A GB 1060257A GB 45656/64 A GB45656/64 A GB 45656/64A GB 4565664 A GB4565664 A GB 4565664A GB 1060257 A GB1060257 A GB 1060257A
- Authority
- GB
- United Kingdom
- Prior art keywords
- film
- layer
- lacquer
- anodizing
- remaining
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010408 film Substances 0.000 abstract 8
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 abstract 6
- 239000004922 lacquer Substances 0.000 abstract 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 abstract 3
- 238000007743 anodising Methods 0.000 abstract 3
- 238000000034 method Methods 0.000 abstract 3
- 239000011521 glass Substances 0.000 abstract 2
- 235000006408 oxalic acid Nutrition 0.000 abstract 2
- 230000001590 oxidative effect Effects 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 239000003990 capacitor Substances 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 239000003792 electrolyte Substances 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 230000000873 masking effect Effects 0.000 abstract 1
- ULWHHBHJGPPBCO-UHFFFAOYSA-N propane-1,1-diol Chemical compound CCC(O)O ULWHHBHJGPPBCO-UHFFFAOYSA-N 0.000 abstract 1
- 239000012047 saturated solution Substances 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/0029—Processes of manufacture
- H01G9/0032—Processes of manufacture formation of the dielectric layer
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/022—Anodisation on selected surface areas
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N97/00—Electric solid-state thin-film or thick-film devices, not otherwise provided for
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Electrochemistry (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
Abstract
<PICT:1060257/C6-C7/1> A process for anodically oxidizing a selected area of a metallic film other than Al, e.g. a film of Ta, W or Ti, comprises masking the area not to be oxidized with a film of Al, and anodizing the resultant surface in an electrolyte, e.g. either of 1 part by weight oxalic acid, 2 parts water, and 3 parts ethylene glycol or of 1 part by weight propane diol and 1 part of a saturated solution of oxalic acid in water. For the anodizing, a Pt sheet electrode may be used with an applied potential between it and the surface to be anodized of 10 volts which is gradually increased to 150 volts and then held at this value until the current becomes stable. The process may be used in making electrical capacitors and thin film resistance-capacitance circuits fabricated on a single substrate. These may be made by cathodically sputtering a film 12, Fig. 1A, of W, Ti or Ta on a glass substrate 10 (the glass may first be coated with a layer of Au, not shown), vacuum depositing a layer 22 of Al and then applying a layer 24 of a photographically sensitive lacquer, removing the lacquer from at least one predetermined area of the Al, removing the Al from the predetermined area, anodically oxidizing the film of W, Ti or Ta in the predetermined area, removing the remaining portion of the lacquer film, removing the remaining portion of the Al film, and applying a contact to the anodically oxidized portion 14, Fig. 1G, of the film 12 of W, Ti or Ta by evaporating thereon a layer 16 of Cr and a layer 18 of Au. In a modified process, the use of a photo-resist lacquer layer is omitted. After selective removal of the Al and during anodizing, both the remaining Al and the exposed part of the layer of W, Ti or Ta become coated with their oxides. The Al2O3 and remaining Al are subsequently etched away.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US32221163A | 1963-11-07 | 1963-11-07 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1060257A true GB1060257A (en) | 1967-03-01 |
Family
ID=23253898
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB45656/64A Expired GB1060257A (en) | 1963-11-07 | 1964-11-09 | Improvements in and relating to the anodic treatment of metallic films |
Country Status (2)
| Country | Link |
|---|---|
| DE (1) | DE1496953B2 (en) |
| GB (1) | GB1060257A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3556910A1 (en) * | 2018-04-20 | 2019-10-23 | Murata Manufacturing Co., Ltd. | Semiconductor device having porous region embedded structure and method of manufacture thereof |
| CN111989426A (en) * | 2018-04-20 | 2020-11-24 | 株式会社村田制作所 | Semiconductor device having porous region embedded structure and method of manufacturing the same |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3971710A (en) * | 1974-11-29 | 1976-07-27 | Ibm | Anodized articles and process of preparing same |
-
1964
- 1964-11-06 DE DE19641496953 patent/DE1496953B2/en active Pending
- 1964-11-09 GB GB45656/64A patent/GB1060257A/en not_active Expired
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3556910A1 (en) * | 2018-04-20 | 2019-10-23 | Murata Manufacturing Co., Ltd. | Semiconductor device having porous region embedded structure and method of manufacture thereof |
| WO2019202046A1 (en) * | 2018-04-20 | 2019-10-24 | Murata Manufacturing Co., Ltd | Semiconductor device having porous region embedded structure and method of manufacture thereof |
| CN111989426A (en) * | 2018-04-20 | 2020-11-24 | 株式会社村田制作所 | Semiconductor device having porous region embedded structure and method of manufacturing the same |
| CN111989426B (en) * | 2018-04-20 | 2024-05-17 | 株式会社村田制作所 | Semiconductor device having porous region embedded structure and method of manufacturing the same |
| US12054838B2 (en) | 2018-04-20 | 2024-08-06 | Murata Manufacturing Co., Ltd | Semiconductor device having porous region embedded structure and method of manufacture thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1496953B2 (en) | 1973-07-19 |
| DE1496953A1 (en) | 1969-08-14 |
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