GB1183384A - Improvements in Automatic Gain Control Circuit Arrangements - Google Patents

Improvements in Automatic Gain Control Circuit Arrangements

Info

Publication number
GB1183384A
GB1183384A GB04774/67A GB1477467A GB1183384A GB 1183384 A GB1183384 A GB 1183384A GB 04774/67 A GB04774/67 A GB 04774/67A GB 1477467 A GB1477467 A GB 1477467A GB 1183384 A GB1183384 A GB 1183384A
Authority
GB
United Kingdom
Prior art keywords
collector
region
low resistivity
gain control
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB04774/67A
Other languages
English (en)
Inventor
Jack Stewart Lamming
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASSOCIATED SEMICONDUCTOR MFT
Original Assignee
ASSOCIATED SEMICONDUCTOR MFT
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASSOCIATED SEMICONDUCTOR MFT filed Critical ASSOCIATED SEMICONDUCTOR MFT
Priority to GB50710/69A priority Critical patent/GB1183385A/en
Priority to GB04774/67A priority patent/GB1183384A/en
Priority to NL6804217A priority patent/NL6804217A/xx
Priority to BE713017D priority patent/BE713017A/xx
Priority to FR1560096D priority patent/FR1560096A/fr
Priority to CH465868A priority patent/CH485332A/de
Priority to DE19681764089 priority patent/DE1764089A1/de
Priority to US717796A priority patent/US3518510A/en
Publication of GB1183384A publication Critical patent/GB1183384A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers
    • H03G3/20—Automatic control
    • H03G3/30—Automatic control in amplifiers having semiconductor devices
    • H03G3/3036—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0017—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid-state elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/615—Combinations of vertical BJTs and one or more of resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Amplifiers (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
GB04774/67A 1967-03-31 1967-03-31 Improvements in Automatic Gain Control Circuit Arrangements Expired GB1183384A (en)

Priority Applications (8)

Application Number Priority Date Filing Date Title
GB50710/69A GB1183385A (en) 1967-03-31 1967-03-31 Improvements in and relating to Semiconductor Devices
GB04774/67A GB1183384A (en) 1967-03-31 1967-03-31 Improvements in Automatic Gain Control Circuit Arrangements
NL6804217A NL6804217A (en:Method) 1967-03-31 1968-03-26
BE713017D BE713017A (en:Method) 1967-03-31 1968-03-29
FR1560096D FR1560096A (en:Method) 1967-03-31 1968-03-29
CH465868A CH485332A (de) 1967-03-31 1968-03-29 Halbleitervorrichtung und Verfahren zu ihrem Betrieb
DE19681764089 DE1764089A1 (de) 1967-03-31 1968-03-30 Halbleitervorrichtung
US717796A US3518510A (en) 1967-03-31 1968-04-01 Planar transistor with substrate-base connection providing automatic gain control

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB04774/67A GB1183384A (en) 1967-03-31 1967-03-31 Improvements in Automatic Gain Control Circuit Arrangements

Publications (1)

Publication Number Publication Date
GB1183384A true GB1183384A (en) 1970-03-04

Family

ID=10047251

Family Applications (1)

Application Number Title Priority Date Filing Date
GB04774/67A Expired GB1183384A (en) 1967-03-31 1967-03-31 Improvements in Automatic Gain Control Circuit Arrangements

Country Status (7)

Country Link
US (1) US3518510A (en:Method)
BE (1) BE713017A (en:Method)
CH (1) CH485332A (en:Method)
DE (1) DE1764089A1 (en:Method)
FR (1) FR1560096A (en:Method)
GB (1) GB1183384A (en:Method)
NL (1) NL6804217A (en:Method)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3631313A (en) * 1969-11-06 1971-12-28 Intel Corp Resistor for integrated circuit
NL7009091A (en:Method) * 1970-06-20 1971-12-22
US3928096A (en) * 1974-01-07 1975-12-23 Owens Illinois Inc Boron doping of semiconductors
US3962000A (en) * 1974-01-07 1976-06-08 Owens-Illinois, Inc. Barium aluminoborosilicate glass-ceramics for semiconductor doping

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3319174A (en) * 1964-10-07 1967-05-09 Westinghouse Electric Corp Complementary bridge integrated semiconductor amplifier
US3309537A (en) * 1964-11-27 1967-03-14 Honeywell Inc Multiple stage semiconductor circuits and integrated circuit stages
US3372070A (en) * 1965-07-30 1968-03-05 Bell Telephone Labor Inc Fabrication of semiconductor integrated devices with a pn junction running through the wafer
US3418545A (en) * 1965-08-23 1968-12-24 Jearld L. Hutson Photosensitive devices having large area light absorbing junctions

Also Published As

Publication number Publication date
FR1560096A (en:Method) 1969-03-14
BE713017A (en:Method) 1968-09-30
DE1764089A1 (de) 1971-02-11
US3518510A (en) 1970-06-30
NL6804217A (en:Method) 1968-10-01
CH485332A (de) 1970-01-31

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees