BE713017A - - Google Patents
Info
- Publication number
- BE713017A BE713017A BE713017DA BE713017A BE 713017 A BE713017 A BE 713017A BE 713017D A BE713017D A BE 713017DA BE 713017 A BE713017 A BE 713017A
- Authority
- BE
- Belgium
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G3/00—Gain control in amplifiers or frequency changers
- H03G3/20—Automatic control
- H03G3/30—Automatic control in amplifiers having semiconductor devices
- H03G3/3036—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G1/00—Details of arrangements for controlling amplification
- H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
- H03G1/0017—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid-state elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
- H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
- H10D84/615—Combinations of vertical BJTs and one or more of resistors or capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB04774/67A GB1183384A (en) | 1967-03-31 | 1967-03-31 | Improvements in Automatic Gain Control Circuit Arrangements |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE713017A true BE713017A (en:Method) | 1968-09-30 |
Family
ID=10047251
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE713017D BE713017A (en:Method) | 1967-03-31 | 1968-03-29 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3518510A (en:Method) |
| BE (1) | BE713017A (en:Method) |
| CH (1) | CH485332A (en:Method) |
| DE (1) | DE1764089A1 (en:Method) |
| FR (1) | FR1560096A (en:Method) |
| GB (1) | GB1183384A (en:Method) |
| NL (1) | NL6804217A (en:Method) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3631313A (en) * | 1969-11-06 | 1971-12-28 | Intel Corp | Resistor for integrated circuit |
| NL7009091A (en:Method) * | 1970-06-20 | 1971-12-22 | ||
| US3962000A (en) * | 1974-01-07 | 1976-06-08 | Owens-Illinois, Inc. | Barium aluminoborosilicate glass-ceramics for semiconductor doping |
| US3928096A (en) * | 1974-01-07 | 1975-12-23 | Owens Illinois Inc | Boron doping of semiconductors |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3319174A (en) * | 1964-10-07 | 1967-05-09 | Westinghouse Electric Corp | Complementary bridge integrated semiconductor amplifier |
| US3309537A (en) * | 1964-11-27 | 1967-03-14 | Honeywell Inc | Multiple stage semiconductor circuits and integrated circuit stages |
| US3372070A (en) * | 1965-07-30 | 1968-03-05 | Bell Telephone Labor Inc | Fabrication of semiconductor integrated devices with a pn junction running through the wafer |
| US3418545A (en) * | 1965-08-23 | 1968-12-24 | Jearld L. Hutson | Photosensitive devices having large area light absorbing junctions |
-
1967
- 1967-03-31 GB GB04774/67A patent/GB1183384A/en not_active Expired
-
1968
- 1968-03-26 NL NL6804217A patent/NL6804217A/xx unknown
- 1968-03-29 BE BE713017D patent/BE713017A/xx unknown
- 1968-03-29 CH CH465868A patent/CH485332A/de not_active IP Right Cessation
- 1968-03-29 FR FR1560096D patent/FR1560096A/fr not_active Expired
- 1968-03-30 DE DE19681764089 patent/DE1764089A1/de active Pending
- 1968-04-01 US US717796A patent/US3518510A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| DE1764089A1 (de) | 1971-02-11 |
| US3518510A (en) | 1970-06-30 |
| FR1560096A (en:Method) | 1969-03-14 |
| CH485332A (de) | 1970-01-31 |
| NL6804217A (en:Method) | 1968-10-01 |
| GB1183384A (en) | 1970-03-04 |