GB1176653A - Improvements in Apparatus for Determining the Operating Temperature of Semi-Conductors. - Google Patents
Improvements in Apparatus for Determining the Operating Temperature of Semi-Conductors.Info
- Publication number
- GB1176653A GB1176653A GB1446866A GB1446866A GB1176653A GB 1176653 A GB1176653 A GB 1176653A GB 1446866 A GB1446866 A GB 1446866A GB 1446866 A GB1446866 A GB 1446866A GB 1176653 A GB1176653 A GB 1176653A
- Authority
- GB
- United Kingdom
- Prior art keywords
- thyristor
- power
- circuit
- semi
- analogue circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06G—ANALOGUE COMPUTERS
- G06G7/00—Devices in which the computing operation is performed by varying electric or magnetic quantities
- G06G7/48—Analogue computers for specific processes, systems or devices, e.g. simulators
- G06G7/62—Analogue computers for specific processes, systems or devices, e.g. simulators for electric systems or apparatus
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Theoretical Computer Science (AREA)
- Power Engineering (AREA)
- Mathematical Physics (AREA)
- Testing Electric Properties And Detecting Electric Faults (AREA)
Abstract
1,176,653. Semi-conductor simulation. ENGLISH ELECTRIC CO. Ltd. 20 March, 1967 [1 April, 1966], No. 14468/66. Heading G4G. [Also in Division G1] An apparatus for assessing the temperature developed at any part of a semi-conductor device, such as a thyristor 2, under given operating conditions, incorporates a monitoring circuit 3, 8, for deriving a signal related to the power developed in the device, this signal being applied to an analogue circuit 15 providing an electrical simulation of the thermal characteristics of the component parts of the device. Signals are tapped from appropriate parts of the analogue circuit to indicate the temperatures at the corresponding parts of the device under the given conditions. To derive the signal related to the power developed in the thyristor 2 a similar device, viz, thyristor 5, is connected in series with it. A voltage corresponding to the current through thyristor 5, detected across the series resistor 4, is applied to the differential field windings 9 of a Hall effect multiplier, while the voltage across thyristor 5 is applied to the Hall plate of the multiplier. The plate output, represening power, is applied to amplifier 11, in turn connected to amplifier 12 whose output provides a current signal, proportional to the power, to a point 16 in the analogue circuit 15, This directly represents the thermal characteristics of the thyristor 5 and consequently simulates those of the thyristor 2. The analogue circuit representing the therma characteristics of the thyristor incorporates a resistor capacitor array simulating heat transfer paths in the thyristor. The point 16 to which the input current is supplied corresponds to the silicon junction of the thyristor, where the highest power dissipation occurs. The terminals 17, 18 and 19 represent the cathode lead, mounting base and heat sink of the thyristor respectively. The effect of ambient temperature is taken into account by applying a voltage from an energized potentiometer 21 to the circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1446866A GB1176653A (en) | 1966-04-01 | 1966-04-01 | Improvements in Apparatus for Determining the Operating Temperature of Semi-Conductors. |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1446866A GB1176653A (en) | 1966-04-01 | 1966-04-01 | Improvements in Apparatus for Determining the Operating Temperature of Semi-Conductors. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1176653A true GB1176653A (en) | 1970-01-07 |
Family
ID=10041747
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1446866A Expired GB1176653A (en) | 1966-04-01 | 1966-04-01 | Improvements in Apparatus for Determining the Operating Temperature of Semi-Conductors. |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB1176653A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112824841A (en) * | 2019-11-19 | 2021-05-21 | 许继集团有限公司 | Valve tower temperature monitoring system and method |
-
1966
- 1966-04-01 GB GB1446866A patent/GB1176653A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112824841A (en) * | 2019-11-19 | 2021-05-21 | 许继集团有限公司 | Valve tower temperature monitoring system and method |
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