GB1468161A - Method of and apparatus for testing the thermal resistance of a transistor - Google Patents
Method of and apparatus for testing the thermal resistance of a transistorInfo
- Publication number
- GB1468161A GB1468161A GB2300173A GB2300173A GB1468161A GB 1468161 A GB1468161 A GB 1468161A GB 2300173 A GB2300173 A GB 2300173A GB 2300173 A GB2300173 A GB 2300173A GB 1468161 A GB1468161 A GB 1468161A
- Authority
- GB
- United Kingdom
- Prior art keywords
- transistor
- base
- rise
- emitter voltage
- current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2608—Circuits therefor for testing bipolar transistors
- G01R31/2619—Circuits therefor for testing bipolar transistors for measuring thermal properties thereof
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
1468161 Measuring transistor parameters LUCAS ELECTRICAL Ltd 6 May 1974 [15 May 1973] 23001/73 Heading G1U The thermal resistance of a transistor is measured by a method including the step of determining the rise in junction temperature by measuring the change in base-emitter or base-collector voltage after passing a known collector current through the transistor for a predetermined time which is too short to cause any rise in the transistor mounting temperature. The transistor 20 is fixed to a mounting base but nuts tightened by a torque wrench and has a copper mounting washer with all surfaces being smeared with heat conducting silicone grease. The rise in junction temperature is measured by determining the rise in base-emitter voltage which is temperature dependent in a manner which has been previously determined. A fixed base current I ref , flows into the transistor while switch 23 short circuits the current source 21, and sample and hold 29 measures the base-emitter voltage. Switch 23 then is turned off and a current I c flows through the transistor. After the switch is turned on again, sample and hold 30 measures the new base-emitter voltage. Amplifier 26 maintains the collector-emitter voltage constant during the flow of I c . The thermal resistance is given by the quotient of junction temperature rise and power dissipated (I c .V CE ).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB2300173A GB1468161A (en) | 1974-05-06 | 1974-05-06 | Method of and apparatus for testing the thermal resistance of a transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB2300173A GB1468161A (en) | 1974-05-06 | 1974-05-06 | Method of and apparatus for testing the thermal resistance of a transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1468161A true GB1468161A (en) | 1977-03-23 |
Family
ID=10188507
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB2300173A Expired GB1468161A (en) | 1974-05-06 | 1974-05-06 | Method of and apparatus for testing the thermal resistance of a transistor |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB1468161A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104297658A (en) * | 2014-10-24 | 2015-01-21 | 工业和信息化部电子第五研究所 | Device, method and testing plate for testing thermal resistance of metal-oxide-semiconductor field-effect transistor |
| CN111983411A (en) * | 2020-07-10 | 2020-11-24 | 中国电子科技集团公司第十三研究所 | Method and device for testing thermal resistance of multi-finger-gate transistor and terminal equipment |
| CN115078947A (en) * | 2022-06-15 | 2022-09-20 | 北京工业大学 | Base current circuit for measuring thermal resistance of pnp bipolar transistor |
| CN115078947B (en) * | 2022-06-15 | 2024-06-04 | 北京工业大学 | Base current circuit for measuring thermal resistance of pnp bipolar transistor |
-
1974
- 1974-05-06 GB GB2300173A patent/GB1468161A/en not_active Expired
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104297658A (en) * | 2014-10-24 | 2015-01-21 | 工业和信息化部电子第五研究所 | Device, method and testing plate for testing thermal resistance of metal-oxide-semiconductor field-effect transistor |
| CN104297658B (en) * | 2014-10-24 | 2018-04-27 | 工业和信息化部电子第五研究所 | Metal-oxide half field effect transistor thermo-resistance measurement plate |
| CN111983411A (en) * | 2020-07-10 | 2020-11-24 | 中国电子科技集团公司第十三研究所 | Method and device for testing thermal resistance of multi-finger-gate transistor and terminal equipment |
| CN111983411B (en) * | 2020-07-10 | 2022-12-27 | 中国电子科技集团公司第十三研究所 | Method and device for testing thermal resistance of multi-finger-gate transistor and terminal equipment |
| CN115078947A (en) * | 2022-06-15 | 2022-09-20 | 北京工业大学 | Base current circuit for measuring thermal resistance of pnp bipolar transistor |
| CN115078947B (en) * | 2022-06-15 | 2024-06-04 | 北京工业大学 | Base current circuit for measuring thermal resistance of pnp bipolar transistor |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB1468161A (en) | Method of and apparatus for testing the thermal resistance of a transistor | |
| GB900329A (en) | Systems for measuring electrolytic conductivity of a liquid | |
| FR2318457A1 (en) | Integrated circuit voltage stabiliser for motor speed control - has temp. sensitive transistSphaerotheca fuliginea etc. | |
| SU1681283A1 (en) | Method of determination of the transistor thermal resistance | |
| FR2315699A1 (en) | Instrument to measure resistance as function of temp. - includes determination of its thermal capacity and heat dissipation coefficient | |
| GB1186150A (en) | Constant Current Instrument Regulator. | |
| JPS5312373A (en) | Measuring apparatus for temperature difference | |
| JPS5832177A (en) | Measuring method for temperature in mosfet channel part | |
| SU1581998A1 (en) | Method of measuring the area of surface of electroconducting articles | |
| JPS57191574A (en) | Testing method for transistor | |
| JPS573019A (en) | Burn-out detector for resistance thermometer | |
| JPS5544965A (en) | Testing method of semiconductor device | |
| JPS54124685A (en) | Measuring method of junction part temperature of darlington connection transistor | |
| JPS57106871A (en) | Current detecting circuit | |
| SU469104A1 (en) | Device for testing current transformers | |
| JPS6432317A (en) | Temperature compensating device | |
| JPS547280A (en) | Measuring method for thermal resistance of transistor | |
| GB1184064A (en) | Improvements in or relating to apparatus for Indicating the State of Charge of an Electric Battery | |
| JPS6416972A (en) | Method for measuring junction temperature of insulation gate type bipolar transistor | |
| JPS5523429A (en) | Method and device for temperature measurement by computer using digital temperature detector | |
| SU387305A1 (en) | DEVICE FOR MEASURING THE STATIC TRANSFORMER COEFFICIENT OF THE TRANSISTOR CURRENT | |
| GB836784A (en) | Improvements in and relating to apparatus for determining the thermal conductivity of liquids | |
| JPS576369A (en) | Constant power load tester | |
| JPS5246876A (en) | Thermcouple fault detecting device | |
| JPS5473254A (en) | Constant-voltage circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |