GB1174597A - Radiation Generators including Semiconductive Bodies - Google Patents

Radiation Generators including Semiconductive Bodies

Info

Publication number
GB1174597A
GB1174597A GB56881/66A GB5688166A GB1174597A GB 1174597 A GB1174597 A GB 1174597A GB 56881/66 A GB56881/66 A GB 56881/66A GB 5688166 A GB5688166 A GB 5688166A GB 1174597 A GB1174597 A GB 1174597A
Authority
GB
United Kingdom
Prior art keywords
arsenic
compensated
crystal
region
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB56881/66A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of GB1174597A publication Critical patent/GB1174597A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/0883—Arsenides; Nitrides; Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/002—Amphoteric doping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/056—Gallium arsenide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/107—Melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/919—Compensation doping

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Geometry (AREA)
  • Led Devices (AREA)
  • Luminescent Compositions (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
GB56881/66A 1965-12-20 1966-12-20 Radiation Generators including Semiconductive Bodies Expired GB1174597A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US514940A US3387163A (en) 1965-12-20 1965-12-20 Luminescent semiconductor devices including a compensated zone with a substantially balanced concentration of donors and acceptors

Publications (1)

Publication Number Publication Date
GB1174597A true GB1174597A (en) 1969-12-17

Family

ID=24049329

Family Applications (1)

Application Number Title Priority Date Filing Date
GB56881/66A Expired GB1174597A (en) 1965-12-20 1966-12-20 Radiation Generators including Semiconductive Bodies

Country Status (4)

Country Link
US (1) US3387163A (https=)
JP (1) JPS5334477B1 (https=)
GB (1) GB1174597A (https=)
NL (1) NL144471B (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1518717A (fr) * 1966-12-21 1968-03-29 Radiotechnique Coprim Rtc Perfectionnements aux diodes électroluminescentes
US3621340A (en) * 1969-04-16 1971-11-16 Bell Telephone Labor Inc Gallium arsenide diode with up-converting phosphor coating
JPS4921992B1 (https=) * 1969-06-30 1974-06-05
GB1285686A (en) * 1969-09-12 1972-08-16 Hitachi Ltd A method of doping a gas-phase semiconductor layer
DE2025773B2 (de) * 1970-05-26 1972-04-13 Siemens AG, 1000 Berlin u. 8000 München Detektor fuer elektromagnetische strahlung
FR2122007A5 (https=) * 1971-01-14 1972-08-25 Thomson Csf
US3751310A (en) * 1971-03-25 1973-08-07 Bell Telephone Labor Inc Germanium doped epitaxial films by the molecular beam method
FR2192431B1 (https=) * 1972-07-12 1975-09-05 Radiotechnique Compelec
JPS5831736B2 (ja) * 1975-12-12 1983-07-08 三菱電機株式会社 ハツコウダイオ−ドノセイゾウホウ
US4439004A (en) * 1977-03-16 1984-03-27 Hughes Aircraft Company Optical waveguide and modulator and process for fabricating same

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2683794A (en) * 1951-12-27 1954-07-13 Bell Telephone Labor Inc Infrared energy source
USRE25632E (en) * 1960-01-11 1964-08-18 Optical maser
NL299675A (https=) * 1962-10-24 1900-01-01
US3267294A (en) * 1963-11-26 1966-08-16 Ibm Solid state light emissive diodes having negative resistance characteristics

Also Published As

Publication number Publication date
US3387163A (en) 1968-06-04
DE1539618B2 (de) 1972-07-27
DE1539618A1 (de) 1969-12-18
JPS5334477B1 (https=) 1978-09-20
NL6617863A (https=) 1967-06-21
NL144471B (nl) 1974-12-16

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PE Patent expired