GB1172491A - A method of manufacturing a semiconductor device - Google Patents

A method of manufacturing a semiconductor device

Info

Publication number
GB1172491A
GB1172491A GB03570/68A GB1357068A GB1172491A GB 1172491 A GB1172491 A GB 1172491A GB 03570/68 A GB03570/68 A GB 03570/68A GB 1357068 A GB1357068 A GB 1357068A GB 1172491 A GB1172491 A GB 1172491A
Authority
GB
United Kingdom
Prior art keywords
oxide
layer
silicon
diffusion
glass
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB03570/68A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of GB1172491A publication Critical patent/GB1172491A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1404—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase using predeposition followed by drive-in of impurities into the semiconductor surface, e.g. predeposition from a gaseous phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H10P32/141—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers the applied layer comprising oxides only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material

Landscapes

  • Formation Of Insulating Films (AREA)
GB03570/68A 1967-03-29 1968-03-20 A method of manufacturing a semiconductor device Expired GB1172491A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1908267 1967-03-29

Publications (1)

Publication Number Publication Date
GB1172491A true GB1172491A (en) 1969-12-03

Family

ID=11989508

Family Applications (1)

Application Number Title Priority Date Filing Date
GB03570/68A Expired GB1172491A (en) 1967-03-29 1968-03-20 A method of manufacturing a semiconductor device

Country Status (3)

Country Link
FR (1) FR1557549A (https=)
GB (1) GB1172491A (https=)
NL (1) NL150619B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007082760A1 (de) * 2006-01-23 2007-07-26 Gp Solar Gmbh Verfahren zur herstellung eines halbleiterbauelements mit unterschiedlich stark dotierten bereichen

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1255995A (en) * 1968-03-04 1971-12-08 Hitachi Ltd Semiconductor device and method of making same
US3615941A (en) * 1968-05-07 1971-10-26 Hitachi Ltd Method for manufacturing semiconductor device with passivation film
JPS501872B1 (https=) * 1970-01-30 1975-01-22

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007082760A1 (de) * 2006-01-23 2007-07-26 Gp Solar Gmbh Verfahren zur herstellung eines halbleiterbauelements mit unterschiedlich stark dotierten bereichen
CN101379595B (zh) * 2006-01-23 2011-05-11 Gp太阳能有限公司 用于制造具有不同掺杂浓度的区域的半导体元件的方法

Also Published As

Publication number Publication date
NL6804373A (https=) 1968-09-30
DE1764065A1 (de) 1972-03-02
DE1764065B2 (de) 1972-11-02
FR1557549A (https=) 1969-02-14
NL150619B (nl) 1976-08-16

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PE20 Patent expired after termination of 20 years